The electrical characterization of metal–insulator–semiconductor device with β-naphthol orange interface

Journal of Materials Science: Materials in Electronics - This study was formed by the β-naphthol orange/p-Si metal–insulator–semiconductor (MIS) structure by obtaining...     

Room-temperature interface state analysis of Au/Poly(4-vinyl phenol)/p-Si structure

The Poly(4-vinyl phenol) insulator layer was grown by spin coating technique onto p-Si substrate. Diode ideality factor (n), insulator layer thickness (δ), space charge region width (W_D), interface state density (N_ss), series resistance (R_s), acceptor concentration (N_A) of the Au/Poly(4-vinyl phenol)/p-Si structure have been extracted from the current–voltage (I–V), frequency dependent capacitance–voltage (C–V) and conductance–voltage (G–V) measurements. It is pointed out that the interface states lead to deviation of the ideality factor value from 1 and frequency dispersion of the C–V characteristics. N_ss profiles as a function of (E_ss−E_v) obtained using I–V and low frequency C–V measurements are in good agreement. N_ss values varying between 10¹² and 10¹³ eV⁻¹ cm⁻² mean that Poly(4-vinyl phenol) is a candidate for insulator layer forming on Si as powerful as SiN₄, SnO₂, TiO₂.     

NOA61 photopolymer as an interface for Al/NOA61/p-Si/Al heterojunction MPS device

The effect of the NOA61 photopolymer organic interlayer on the electrical and dielectric properties of the Al/NOA61/p-Si/Al metal-polymer-semiconductor (MPS) device has been reported the first time. The device parameters of the device such as rectification ratio (RR), ideality factor (n), and barrier height (Φ_B) were determined from the current–voltage (I–V) measurements according to thermionic emission theory (TE). Series resistance, R_S, values were also calculated by Norde and Cheung methods in the range of 2.4–3 kΩ. According to the reverse bias I–V measurements, the current was governed by Frenkel–Poole Emission (FPE) in the entire region. The voltage-dependent capacitance (C) and the conductance (G/ω) measurements were investigated at particular frequencies between 20 kHz and 1 MHz. The dielectric constant (ε′), dielectric loss (ε″), loss tangent (tanδ), and the complex electric modulus (M) were calculated using the measured C and G parameters, and it was seen that the interface states and surface dipoles at the interfacial layer were effective in the behavior of the device in alternating current. Additionally, the morphological properties of the thin film were studied by scanning electron microscopy (SEM). We observed that (NOA61) organic interlayer may be a noticeable alternative to a variety of electronic applications.

     

Synthesis and characterization of vanadium oxide thin films on different substrates

In this study, the V₈O₁₅ derivative of vanadium oxide was produced on plain glass, indium tin oxide and silicon wafer substrate layers by taking advantage of wet chemical synthesis which is an easy and economical method. The structural properties of the produced films were examined by XRD and SEM analyses. Besides, Al/VO_x/p-Si metal-oxide-semiconductor (MOS) structure was obtained by the same synthesis method. Doping densities of these MOS structures were calculated from frequency dependent capacitance–voltage measurements. It was determined that the interface states which were assigned with the help of these parameters vary according to frequency.     

The effect of repeated annealing temperature on the structural,optical, and electrical properties of TiO<Subscript>2</Subscript> thin films prepared by dip-coating sol–gel method

In this study, we have studied the effect of repeated annealing temperatures on TiO₂ thin films prepared by dip-coating sol–gel method onto the glasses and silicon substrates. The TiO₂ thin films coated samples were repeatedly annealed in the air at temperatures 100, 200, and 300 °C for 5 min period. The dipping processes were repeated 5 to 10 times in order to increase the thickness of the films and then the TiO₂ thin films were annealed at a fixed temperature of 500 °C for 1 h period. The effect of repeated annealing temperature on the TiO₂ thin films prepared on glass substrate were investigated by means of UV–VIS spectroscopy, X-ray diffraction (XRD), and atomic force microscopy (AFM). It was observed that the thickness, average crystallite size, and average grain size of TiO₂ samples decreased with increasing pre-heating temperature. On the other hand, thickness, average crystallite size, and average grain size of TiO₂ films were increased with increasing number of the layer. Al/TiO₂/p-Si metal–insulator–semiconductor (MIS) structures were obtained from the films prepared on p-type single silicon wafer substrate. Capacitance–voltage (C–V) and conductance–voltage (G/ω–V) measurements of the prepared MIS structures were conducted at room temperature. Series resistance (R _s) and oxide capacitance (C _ox) of each structures were determined by means of the C–V curves.     

Temperature Dependent Current Transport Mechanism of Photopolymer Based Al/NOA60/p-Si MPS Device

A photopolymer based Al/Norland Optical Adhesive 60 (NOA60)/p-Si MPS (metal-polymer-semiconductor) device was fabricated by a combination of vacuum evaporation and smear technique. The current transport properties of the device were investigated by using the forward bias current–voltage (I-V) characteristic in the temperature range of 80–300 K. The cross-sectional structure of polymer/semiconductor was revealed by the scanning electron microscope (SEM) image and it was seen that the NOA60 photopolymer was tidily coated on the p-Si surface. According to the I-V measurements at room temperature, the MPS device exhibits a good rectification ratio of 8140 at?±?1 V. The temperature-dependent I-V measurements (I-V-T) were analyzed based on the thermionic emission (TE) theory and an abnormal increase in zero-bias barrier height (BH) and a decrease in ideality factor (n) was observed with increasing temperature. Additionally, two different linear regions with distinct values from the theoretical value of the Richardson constant (A*) were observed in the conventional Richardson plot. Such deviations from the ideal TE theory have been attributed to the effect of BH inhomogeneities. Gaussian distribution (GD) of the BH model has applied the I-V-T results and the double GD BH with mean values of 0.75?±?0.08 eV (80–140 K) and 1.02?±?0.11 eV (140–300 K) were calculated. Moreover, the A* value of 31.4 A/cm²K² was calculated close to the known value of p-Si from the modified Richardson plot. Thus, it has been concluded that the current transport of the Al/NOA60/p-Si MPS device can be explained by TE with a double GD BH model for a wide temperature region.