Matrix Transformation in Boron Containing High-Temperature Co–Re–Cr Alloys

An addition of boron largely increases the ductility in polycrystalline high-temperature Co–Re alloys. Therefore, the effect of boron on the alloy structural characteristics is of high importance for the stability of the matrix at operational temperatures. Volume fractions of ε (hexagonal close-packed—hcp), γ (face-centered cubic—fcc) and σ (Cr₂Re₃ type) phases were measured at ambient and high temperatures (up to 1500 °C) for a boron-containing Co–17Re–23Cr alloy using neutron diffraction. The matrix phase undergoes an allotropic transformation from ε to γ structure at high temperatures, similar to pure cobalt and to the previously investigated, more complex Co–17Re–23Cr–1.2Ta–2.6C alloy. It was determined in this study that the transformation temperature depends on the boron content (0–1000 wt. ppm). Nevertheless, the transformation temperature did not change monotonically with the increase in the boron content but reached a minimum at approximately 200 ppm of boron. A probable reason is the interplay between the amount of boron in the matrix and the amount of σ phase, which binds hcp-stabilizing elements (Cr and Re). Moreover, borides were identified in alloys with high boron content.     

Deterministic safety study of advanced molten salt nuclear systems for prospective nuclear power

The inter-comparative analysis of the deterministic safety potential of innovative molten salt systems with critical and sub-critical cores is presented for both fast and thermal neutron spectra. The analysis includes two aspects: the choice of an initial level of sub-criticality and the study of multiple unprotected transients which have been simulated on the basis of one-point kinetics and two-point thermo-hydraulic schemes considering realistic feedback effects. Our preliminary results show that even small levels of sub-criticality (2–3 dollars) of cores can improve their safety characteristics significantly.     

X-ray or UV adjustment of MOS threshold voltage: Analytical and numerical modeling

A model is formulated that describes how radiation-induced charge accumulates in the gate oxide of a MOS structure and how it decays through tunneling and thermal emission. The model is used in a numerical analysis of the x-ray or UV adjustment of threshold voltage in MOS-circuit manufacture. The limits of this process technique are evaluated.     

Characteristics of planar diodes based on heavily doped GaAs/AlAs superlattices in the terahertz frequency region

Characteristics of ohmic InGaAs contacts in planar diodes based on semiconductor superlattices with a small-area active region (1–10 μm²) are studied. The diodes were formed on the basis of short (18 or 30 periods) heavily doped (10¹⁸ cm⁻³) GaAs/AlAs superlattices with a miniband width of 24.4 meV. The reduced resistance of the ohmic contact was equal to 2×10⁻⁷ Ω cm² at room temperature. It is shown that the properties of fabricated planar diodes make it possible to use these diodes later on in semiconductor devices that operate in the terahertz frequency region in a wide temperature range (4–300 K). __________ Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 38, No. 9, 2004, pp. 1141–1146. Original Russian Text Copyright ? 2004 by Pavel’ev, Demarina, Koshurinov, Vasil’ev, Semenova, Zhukov, Ustinov.     

Apoptosis and delayed neuronal damage after carbon monoxide poisoning in the rat

Delayed neurological damage after CO hypoxia was studied in rats to determine whether programmed cell death (PCD), in addition to necrosis, is involved in neuronal death. In rats exposed to either air or CO (2500 ppm), microdialysis in brain cortex and hippocampus was performed to determine the extent of glutamate release and hydroxyl radical generation during the exposures. Groups of control and CO-exposed rats also were tested in a radial maze to assess the effects of the CO exposures on learning and memory. At 3, 7, and 21 days after CO exposure brains were perfusion-fixed and hematoxylin-eosin (H&E) was used to assess injury and to select regions for further examination. DNA fragmentation was sought by examining cryosections with the terminal deoxynucleotidyl transferase-mediated dUTP-biotin nick-end labeling (TUNEL) reaction. We found significant increases in glutamate release and .OH generation during and immediately after CO hypoxia. CO-exposed rats showed learning and memory deficits after exposure associated with heterogeneous cell loss in cortex, globus pallidus, and cerebellum. The frontal cortex was affected most seriously; the damage was slight at Day 3, increased at Day 7, and persistent at Day 21 after CO exposure. TUNEL staining was positive at all three time points, and TUNEL-labeled cells were distributed similarly to eosinophilic cells. The number of cells stained by TUNEL was less than by H&E and amounted to 2 to 5% of all cell nuclei in regions of injury. Ultrastructural features of both neuronal necrosis and apoptosis also were observed readily by electron microscopy. These findings indicate that both necrosis and apoptosis (PCD) contribute to CO poisoning-induced brain cell death.     

An invitation to fiberwise topology: The general framework for multicolored images in pattern recognition and some of its artificial intelligence aspects

We present a short and rather informal account concerning a problem we posed in earlier work, recall our conjecture at the time, and report on our answer today. Specifically, our purpose is to draw attention to fiberwise topology as a possible mathematical tool for formalizing multi-colored images and other complex signals met in pattern recognition (P.R.), to provide some information concerning the mathematical background of the fiber topological machinery, and indicate how to use it. For a detailed technical study as well as a tentative hierarchical classification of topological images in growing order of complexity and the corresponding topological processing methods, the readers may consult Pavel [5]. The paper ends by mentioning some artificial intelligence (A.I.) aspects of the fiberwise imagery.     

混合信号芯片设计处理关键的转折阶段

通过简单地剪切和粘贴知识产权(IP)内核可以加快无工厂半导体公司的系统级芯片(SOC)设计。 过去十年中,涌现出大量的为系统制造商提供专用芯片(ASIC)的小型IC设计公司。这些被称为无工厂企业(因为他们将IC制造过程转交给商业芯片制造工厂),需要的启动资金较少,而且如果市场接受他们的产品的话,能够获得丰厚的回报。在大量设计工具的支持下,这些无工厂设计企业在历史悠久的大型芯片制造商,如IBM、Intel、Motorola和德州仪器公司所主导的市场中赢得了一席之地。