Dimethylsilane polyamines: cytostatic compounds with potentials as anticancer drugs

Several dimethylsilane tetramines [homologs of spermine with an Si(CH3)2 group in the central carbon chain], a carbon analog of the dimethylsilane tetramines [containing C(CH3)2 instead of Si(CH3)2] and a dimethylsilane hexamine were studied with regard to their cytotoxic activity and their ability to interact with double-stranded DNA. All polyamine analogs exerted cytostatic effects to several cell lines at micromolar concentrations. Their ability to condense DNA was comparable to and their ability to displace ethidium bromide from binding to DNA was superior to that of spermine. Their cytostatic effect was not correlated with the depletion of cellular spermidine concentrations. It is suggested that the new polyamine analogs act mainly by displacing spermidine from binding sites which are essential for the promotion of cell growth.     

Electrical characterization of very-narrow-gap bulk HgCdTe single crystals by variable magnetic field hall measurements

Variable-magnetic-field Hall measurements (0 to 1.5 T) are performed on very-narrow-gap bulk-grown Hg_1−xCd_xTe single crystals (0.165 ≤ x ≤ 0.2) at various temperatures (10 to 300K). The electron densities and mobilities are obtained within the one-carrier (electrons) approximation of the reduced-con-ductivity-tensor scheme. The present data together with the selected data set reported by other workers exhibit a pronounced peak when the electron mobility is plotted against the alloy composition x-value which has been predicted to be due to the effective-mass minimum at the bandgap-crossing (E_g ≈ 0). The observed position (x ≈ 0.165), height (≈4 x 10² m²Vs), and width (≈0.01 in x) of the mobility-peak can be explained by a simple simulation involving only ionized-impurity scattering. A lower bound of the effective mass is introduced as a fitting parameter to be consistent with the finiteness of the observed electron mobility and is found to be of the order of 10⁻⁴ of the mass of a free electron.     

Theoretical foundation of the 80/20 rule

A rigorous analysis of the 80/20 rule is made using an index for the observed values of the variables. Three important findings are identified. First, a sufficient condition is provided for Burrell's inverse relationship between minimum holdings and average circulation rate. Second, an indexed version of Lotka's law is used to derive a sufficient condition for Egghe's finding on the 80/20 rule. Third, through the computer simulations of the Simon-Yule model of Lotka's law, we identify the entry rate of new holdings as well as the number of circulations when the entry rate is a decreasing function to be crucial factors for the pattern of the 80/20-type curve.     

Si/SiGe n-MODFETs on thin SiGe virtual substrates prepared by means of He implantation

Si/SiGe n-type modulation-doped field-effect transistors grown on a very thin strain-relieved Si/sub 0.69/Ge/sub 0.31/ buffer on top of a Si(100) substrate were fabricated and characterized. This novel type of virtual substrate has been created by means of a high dose He ion implantation localized beneath a 95-nm-thick pseudomorphic SiGe layer on Si followed by a strain relaxing annealing step at 850/spl deg/C. The layers were grown by molecular beam epitaxy. Electron mobilities of 1415 cm/sup 2//Vs and 5270 cm/sup 2//Vs were measured at room temperature and 77 K, respectively, at a sheet carrier density of about 3/spl times/10/sup 12//cm/sup 2/. The fabricated transistors with Pt-Schottky gates showed good dc characteristics with a drain current of 330 mA/mm and a transconductance of 200 mS/mm. Cutoff frequencies of f/sub t/=49 GHz and f/sub max/=95 GHz at 100 nm gate length were obtained which are quite close to the figures of merit of a control sample grown on a conventional, thick Si/sub 0.7/Ge/sub 0.3/ buffer.     

A holistic approach to feature modeling for product line requirements engineering

Requirements engineering (RE) offers the means to discover, model, and manage the requirements of the products that comprise a product line, while software product line engineering (SPLE) offers the means of realizing the products’ requirements from a common base of software assets. In practice, however, RE and SPLE have proven to be less complementary than they should. While some RE techniques, particularly goal modeling, support the exploration of alternative solutions, the appropriate solution is typically conditional on context and a large product line may have many product-defining contexts. Thus, scalability and traceability through into product line features are key challenges for RE. Feature modeling, by contrast, has been widely accepted as a way of modeling commonality and variability of products of a product line that may be very complex. In this paper, we propose a goal-driven feature modeling approach that separates a feature space in terms of problem space and solution space features, and establish explicit mappings between them. This approach contributes to reducing the inherent complexity of a mixed-view feature model, deriving key engineering drivers for developing core assets of a product line, and facilitating the quality-based product configuration.     

过程自动化系统

读者们觉得新型过程系统更加有用,希望可以购买到更多这样的产品。专家建议:在考虑价格前,首先考虑对系统性能的要求及其拓展性。过程自动化系统较传统的分布式控制系统进步,但用户还是有很多相似的考虑,如可靠性、技术支持和升级等。为了预测出这个价值数     

Natural perspective projections for head-mounted displays

The display units integrated in today's head-mounted displays (HMDs) provide only a limited field of view (FOV) to the virtual world. In order to present an undistorted view to the virtual environment (VE), the perspective projection used to render the VE has to be adjusted to the limitations caused by the HMD characteristics. In particular, the geometric field of view (GFOV), which defines the virtual aperture angle used for rendering of the 3D scene, is set up according to the display field of view (DFOV). A discrepancy between these two fields of view distorts the geometry of the VE in a way that either minifies or magnifies the imagery displayed to the user. It has been shown that this distortion has the potential to affect a user's perception of the virtual space, sense of presence, and performance on visual search tasks. In this paper, we analyze the user's perception of a VE displayed in a HMD, which is rendered with different GFOVs. We introduce a psychophysical calibration method to determine the HMD's actual field of view, which may vary from the nominal values specified by the manufacturer. Furthermore, we conducted two experiments to identify perspective projections for HMDs, which are identified as natural by subjects--even if these perspectives deviate from the perspectives that are inherently defined by the DFOV. In the first experiment, subjects had to adjust the GFOV for a rendered virtual laboratory such that their perception of the virtual replica matched the perception of the real laboratory, which they saw before the virtual one. In the second experiment, we displayed the same virtual laboratory, but restricted the viewing condition in the real world to simulate the limited viewing condition in a HMD environment. We found that subjects evaluate a GFOV as natural when it is larger than the actual DFOV of the HMD--in some cases up to 50 percent--even when subjects viewed the real space with a limited field of view.