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Maleev N. A. Vasil’ev A. P. Kuzmenkov A. G. Bobrov M. A. Kulagina M. M. Troshkov S. I. Maleev S. N. Belyakov V. A. Petryakova E. V. Kudryashova Yu. P. Fefelova E. L. Makartsev I. V. Blokhin S. A. Ahmedov F. A. Egorov A. V. Fefelov A. G. Ustinov V. M. 《Technical Physics Letters》2019,45(11):1092-1096
Technical Physics Letters - A high-electron-mobility transistor (HEMT) based on InAlAs/InGaAs/InP heterostructures possessing higher breakdown characteristics is developed. An InGaAs composite... 相似文献
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Shobolova T. A. Korotkov A. V. Petryakova E. V. Lipatnikov A. V. Puzanov A. S. Obolensky S. V. Kozlov V. A. 《Semiconductors》2019,53(10):1353-1356
Semiconductors - Approaches to solving the problem of the development of efficient bipolar and heterobipolar transistors operating at radio- and ultrahigh frequencies (0.1–10 GHz), which... 相似文献
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