Color coding of the two-dimensional coordinates of events in position-sensitive radiation detectors

A new approach to determining the coordinates of events is proposed, which allows the point coordinates on a plane to be determined on line using a virtually single-channel readout system. According to the proposed method of color coding, each element of the area of a detecting target is assigned its color defined as a ratio of the component radiation wavelengths. Defined in this way, the color of the ith point on the mapping plane is in one to one correspondence with the (x _i , y _i ) coordinates of this point on the target.     

Silicon structures with dielectric insulation obtained by vertical anisotropic etching

Silicon structures with vertical insulating walls were prepared for multielement devices with high element packing density requiring deep pockets in silicon single crystals. The technology is based on the anisotropic etching of (110)-oriented silicon crystals and filling the etch grooves with an organosilicon polymer based suspension.     

Interferometric study of an elongated element model with axisymmetric streamlining for two Mach numbers (M=3 and 4)

The streamlining density fields for elongated models of explosion-formed projectiles were studied by the interference method. The character of the density profiles and their variation upon increasing the Mach number from M=3 to 4 are considered. The analysis reveals some special features in the stabilization shock wave formation. It is shown that the proposed model shape is admissible from the standpoint of moderate aerodynamic resistance and sufficiently high stability.     

Influence of the method of protective oxide formation in a multielement structure on the dark current of a multiscan photodetector

The influence of the method of protective oxide formation in a multielement structure on the dark current of a multiscan type photodetector has been studied using samples modeling the design of this position-sensitive device. Various methods of oxide formation are characterized with respect to the ratio of the volume and surface components of the dark current in the resulting barrier structure. It is established that, using plasmachemical oxidation, it is possible to combine the advantages of the low-temperature oxidation process with a high stability of the dark current.     

Effect of a protruding rod-supported disk on the drag of a nose-controlled cylinder

The drag C _x of a cylinder of diameter D with a front protruding disk supported on a rod of length l has been studied as a function of the relative distance l/D under the conditions of high (supersonic) flight velocities. It is established that the optimum (minimum) drug C _x exists, the value of which agrees with the results of numerical simulations.     

The Multiscan Position-Sensitive Photodetector

A new type of position-sensitive photodetector, called the multiscan, has been developed. The operating principle of the device is based on an integral method of processing optical signals without scanning the device's entire field of view. A potential that corresponds to the position of the median of the light signal is generated at the output of the multiscan. Using the multiscan, it is possible to determine the coordinates of a light spot in tracking mode with error not greater than 1 μm (10⁻⁴ of the device's field of view) with resolution 0.2 μm under the conditions of background noise that is 10⁴ times the strength of the useful signal. __________ Translated from Izmeritel'naya Tekhnika, No. 8, pp. 31–34, August, 2005.     

Mathematical modeling of interferograms of axisymmetrical flows for the optimization of experimental studies

A method is proposed for improving the interference diagnostics of supersonic flows. The computer plotting of interferograms for model density fields provides a means of optimizing the setting of interferometers in experimental design and of testing data-processing algorithms written for interference measurements. Translated from Izmeritel'naya Tekhnika, No. 1, pp. 15–17, January, 1996.     

Fabrication of discrete p-n junctions separated by an insulating layer using direct wafer bonding

Three types of fabrication cycle based on the use of direct wafer bonding are developed for making pairs of discrete p-n-junctions separated by an insulating layer. The forward and reverse branches of the I–V characteristics of the resulting diodes are investigated. For all three fabrication cycles, the differential resistance of the forward branch of the discrete p-n-junctions is ∼0.01Ω, the reverse breakdown is ∼400 V, and the width of the aperture region for the back-to-back diodes is 0.22 V. Taken as a whole, these data, along with the high integrated photosensitivity of the diodes, indicate that direct wafer bonding produces no oxide barrier between the p-and n-regions and forms high-quality interfaces. Fiz. Tekh. Poluprovodn. 33, 880–886 (July 1999)