Wear of graphite anodes during electrolysis of add sulphate solutions

Graphite electrodes were prepared by mixing calcined coke and coal tar pitch. They were pressed under 250 kg cm^–2 and heat treated up to 2800° C. Rectangles measuring 70 mm x 40 mm x 8 mm were anodically polarized under galvanostatic and potentiostatic conditions. Electrolyses were conducted at 10–50 mA cm^–2 for periods ranging from 10–120 hours in Na₂SO₄ solutions acidified with sulphuric acid to various pH values. The wear of graphite anodes increased with decreasing bath temperature, increasing acid concentration, decreasing pH of the electrolyte and increasing current density. A model is suggested which assumes that corrosion takes place via the formation of a lamellar crystal compound with the formula (C ₈ ⁰ O)(OH)₃HSO ₄ ^– ·2H₂SO₄.The compound is unstable at higher temperatures when corrosion is effected by oxidation of graphite by atomic oxygen. The formation of the carbon ions was found to be a necessary precondition for the formation of the complex.     

Diffusion of two associated solvents in various compositions through a swelling polymer material,EVAc

The particular sorption by a swelling polymer with the transfer of hydrocarbons was studied in order to evaluate some barrier properties of this material. The transfer of two types of solvents through two varieties of ethylene vinyl acetate was investigated: absorption of pure toluene and pure n‐hexane and absorption of a toluene/hexane mixture in various compositions. A comparison between the two processes showed that these transfers were very different and depended on two factors: vinyl acetate content and composition of the mixture. The kinetics of absorption were calculated for various compositions. The profiles of concentration as well as the kinetics of swelling were evaluated using a numerical model deduced from the general theory of radial diffusion of a substance with change in dimensions. © 2006 Wiley Periodicals, Inc. J Appl Polym Sci 103: 2099–2106, 2007     

Inter-comparative study of quantitative methods of industrial clinker

Impurities from the raw materials, the grinding and the homogenization of the raw materials, the kiln instability and the complexity of the cooling step, all these factors make it difficult to obtain a perfect evaluation of the mineralogical composition of Portland clinker. We studied the limitations of the most commonly used quantitative methods and recommend some procedures to obtain reliable and reproducible results of quantitative analyses. Different clinker samples (provided by the Bizerte Cement Company (Tunisia)) were subjected to an elemental analysis by X-ray fluorescence and the mineralogical composition was determined by the Bogue calculation and by X-ray powder diffraction combined with the Rietveld method (Different softwares were used: XPert High Score Plus version 2.0 and TOPAS version 4.2). We then compared the results obtained by the Rietveld method and the Bogue calculation to the specific peak areas of each phase. The content of each phase, determined by the Rietveld method, varied proportionally to the change in peak area; a significant difference in these results was found by using the elementary Bogue calculation.     

Synthesis and characterization of poly(1-sila-cis-pent-3-enes) substituted with pendant pyridinyl groups

Poly[1-methyl-1-[3-(3-pyridinyl)propyl]-1-sila-cis-pent-3-ene], poly[1-phenyl-1-[3-(3-pyridinyl)propyl)-1-sila-cis-pent-3-ene], and poly[1-phenyl-1-(4-pyridinyl)-1-sila-cis-pent-3-ene] were synthesized by the anionic ring-opening polymerization of 1-methyl-1-[3-(3-pyridinyl)propyl]-1-silacyclopent-3-ene, 1-phenyl-1-[3-(3-pyridinyl)propyl]-1-silacyclopent-3-ene, and 1-phenyl-1-(4-pyridinyl)-1-silacyclopent-3-ene, respectively. These are the first polycarbosilanes which contain heterocyclic pyridine units as side-chain substituents. These polymers were characterized by¹H,¹³C, and²⁹Si NMR as well as by IR and UV spectroscopy. The molecular weight distributions were determined by gel permeation chromatography, glass transition temperatures, by differential seanning calorimetry: (DSC) and thermal behavior, by thermogravimetric analysis. (TGA).     

Formation of nanostructured silicon surfaces by stain etching

In this work, we report the fabrication of ordered silicon structures by chemical etching of silicon in vanadium oxide (V₂O₅)/hydrofluoric acid (HF) solution. The effects of the different etching parameters including the solution concentration, temperature, and the presence of metal catalyst film deposition (Pd) on the morphologies and reflective properties of the etched Si surfaces were studied. Scanning electron microscopy (SEM) was carried out to explore the morphologies of the etched surfaces with and without the presence of catalyst. In this case, the attack on the surfaces with a palladium deposit begins by creating uniform circular pores on silicon in which we distinguish the formation of pyramidal structures of silicon. Fourier transform infrared spectroscopy (FTIR) demonstrates that the surfaces are H-terminated. A UV-Vis-NIR spectrophotometer was used to study the reflectance of the structures obtained. A reflectance of 2.21% from the etched Si surfaces in the wavelength range of 400 to 1,000 nm was obtained after 120 min of etching while it is of 4.33% from the Pd/Si surfaces etched for 15 min.     

Solvent-free chemical functionalization of hydrogen-terminated boron-doped diamond electrodes with diazonium salts in ionic liquids

This paper reports on green chemical functionalization of hydrogen-terminated boron-doped diamond (BDD) surfaces with aryldiazonium salts in the presence of ionic liquids. The reaction takes place at room temperature in air without any external bias in either hydrophobic (1-butyl-3-methylimidazolium hexafluorophosphate) or hydrophilic (1-butyl-3-methylimidazolium methyl sulfate) ionic liquids. The resulting surfaces were characterized using X-ray photoelectron spectroscopy and electrochemical measurements.     

Development of Potent Adenosine Monophosphate Activated Protein Kinase (AMPK) Activators

Previously, we reported the identification of a thiazolidinedione‐based adenosine monophosphate activated protein kinase (AMPK) activator, compound 1 (N‐[4‐({3‐[(1‐methylcyclohexyl)methyl]‐2,4‐dioxothiazolidin‐5‐ylidene}methyl)phenyl]‐4‐nitro‐3‐(trifluoromethyl)benzenesulfonamide), which provided a proof of concept to delineate the intricate role of AMPK in regulating oncogenic signaling pathways associated with cell proliferation and epithelial–mesenchymal transition (EMT) in cancer cells. In this study, we used 1 as a scaffold to conduct lead optimization, which generated a series of derivatives. Analysis of the antiproliferative and AMPK‐activating activities of individual derivatives revealed a distinct structure–activity relationship and identified 59 (N‐(3‐nitrophenyl)‐N′‐{4‐[(3‐{[3,5‐bis(trifluoromethyl)phenyl]methyl}‐2,4‐dioxothiazolidin‐5‐ylidene)methyl]phenyl}urea) as the optimal agent. Relative to 1 , compound 59 exhibits multifold higher potency in upregulating AMPK phosphorylation in various cell lines irrespective of their liver kinase B1 (LKB1) functional status, accompanied by parallel changes in the phosphorylation/expression levels of p70S6K, Akt, Foxo3a, and EMT‐associated markers. Consistent with its predicted activity against tumors with activated Akt status, orally administered 59 was efficacious in suppressing the growth of phosphatase and tensin homologue (PTEN)‐null PC‐3 xenograft tumors in nude mice. Together, these findings suggest that 59 has clinical value in therapeutic strategies for PTEN‐negative cancer and warrants continued investigation in this regard.     

The preparation of flat H–Si(111) surfaces in 40% NH4F revisited

The reasons why ideally flat H–Si(111) surface can be prepared by NH₄F etching are investigated from correlation between AFM observations and experimental conditions used for etching. It is shown that pitting may be completely suppressed if a one side polished wafer is immersed in an oxygen free solution. An analytical electrochemical study of the (111) and rough face of the same n-Si wafer is presented to yield insight into observations.