Information methods for model selection in linear mixed effects models with application to HCV data

In this paper, we derive a small sample Akaike information criterion, based on the maximized loglikelihood, and a small sample information criterion based on the maximized restricted loglikelihood in the linear mixed effects model when the covariance matrix of the random effects is known. Small sample corrected information criteria are proposed for a special case of linear mixed effects models, the balanced random-coefficient model, without assuming the random coefficients covariance matrix to be known. A simulation study comparing the derived criteria and several others for model selection in the linear mixed effects models is presented. We illustrate the behavior of the studied information criteria on real data from a study of subjects coinfected with HIV and Hepatitis C virus. Robustness of the criteria, in terms of the error distributed as a mixture of normal distributions, is also studied. Special attention is given to the behavior of the conditional AIC by Vaida and Blanchard (2005). Among the studied criteria, GIC performs best, while cAIC exhibits poor performance. Because of its inferior performance, as demonstrated in this work, we do not recommend its use for model selection in linear mixed effects models.     

Study on the effect of grain storage and processing on deltamethrin residues in post-harvest treated wheat with regard to baby-food safety requirements

The effects of storage intervals and of milling procedures on dissipation of deltamethrin residues in post-harvest treated wheat grain were studied with the aim to obtain scientific data on compliance of the processed products with the safety requirements concerning baby foods. The insecticide formulation was applied on stored wheat at a recommended rate of active ingredient of 0.5 mg kg^-1 and at a higher rate of 4 mg kg^-1, performing the highest protective effect. The dissipation of residues and their distribution in different fractions of the milled grain were studied after various storage intervals, from 7 to 270 days after treatment. Eight fractions—bran, semolina, three types of groats, and three types of flour—were collected after milling of grain and analysed for determination of pesticide residues. The residues were determined by gas chromatography characterized by the limit of determination of 0.005 mg kg^-1, low enough for enforcement of the maximum residue level of 0.01 mg kg^-1 established by the European Commission Directive for any pesticide in cereal-based foods. Deltamethrin applied post-harvest on wheat as grain protectant was distinguished by low rate of degradation on the grain under practical storage conditions. One hundred and eighty days after treatment at an application rate of 0.5 mg kg^-1, the residues were between 0.03 and 0.2 mg kg^-1 in the various types of flour. Two hundred and seventy days after treatment at a rate of 4 mg kg^-1, the residues in the flour were in the range of 0.4-1.5 mg kg^-1.     

Measurement of micrometer diffusion lengths by nuclear spectrometry

Semiconductors - A method for determination of diffusion lengths in the range 0.5–50 μm, which corresponds to carrier lifetimes in the nanosecond range, is suggested A calibrated...     

Graphoepitaxy of High‐Quality GaN Layers on Graphene/6H–SiC

The implementation of graphene layers in gallium nitride (GaN) heterostructure growth can solve self‐heating problems in nitride‐based high‐power electronic and light‐emitting optoelectronic devices. In the present study, high‐quality GaN layers are grown on patterned graphene layers and 6H–SiC by metalorganic chemical vapor deposition. A periodic pattern of graphene layers is fabricated on 6H–SiC by using polymethyl methacrylate deposition and electron beam lithography, followed by etching using an Ar/O₂ gas atmosphere. Prior to GaN growth, an AlN buffer layer and an Al_0.2Ga_0.8N transition layer are deposited. The atomic structures of the interfaces between the 6H–SiC and graphene, as well as between the graphene and AlN, are studied using scanning transmission electron microscopy. Phase separation of the Al_0.2Ga_0.8N transition layer into an AlN and GaN superlattice is observed. Above the continuous graphene layers, polycrystalline defective GaN is rapidly overgrown by better quality single‐crystalline GaN from the etched regions. The lateral overgrowth of GaN results in the presence of a low density of dislocations (≈10⁹ cm⁻²) and inversion domains and the formation of a smooth GaN surface.     

MALDI-TOF MS and Morphology Studies of Thiacalixarene-Silsesquioxane Products of Oligo- and Polycondensation

For the first time condensed silsesquioxane derivatives of tetratrialkoxysilyl compounds have been characterized by MALDI-TOF mass spectrometry. Tetrasubstituted p-tert-butyl thiacalix[4]arene derivatives containing organosilicon fragments with variable stereochemistry were chosen as organosilicon compounds for polycondensation. Information obtained from mass spectra was used to deduce both the structures of oligomeric derivatives, as well as the structure of silsesquioxane framework. The morphology of formed polysilsesquioxanes was investigated by scanning and transmission electron microscopy.     

Selective homoepitaxial growth and luminescent properties of ZnO nanopillars

High spatial density ZnO nanopillars (NPs) have been fabricated on catalyst- and pattern-free Si wafers using atmospheric pressure metal organic chemical vapor deposition (APMOCVD) at a moderate temperature (500?°C). The nanopillar diameter is ～ 35 nm and the length is ～ 150 nm, with a density of ～ 2 × 10(9) cm( - 2). The growth evolution of the nanopillars, providing the (0001)(NP) ? (0001)(ZNO grain) ? (100)(Si surface) epitaxial relationship, is extensively studied by scanning and high resolution transmission microscopy. The approach to obtaining the ZnO 1D structures is explained in terms of selective homoepitaxial growth via the crystallographic anisotropy of the seeding layer. The advanced PL properties of ZnO NPs, e.g. indications of free excitonic and absence of defect emission, are related to their single crystalline nature within one pillar and most probably better stoichiometry and less contamination. The observed efficient monochromatic UV emission from the ZnO NPs at room temperature points toward their potential application as building blocks for nanoscale optoelectronic devices.     

Long spin relaxation times in wafer scale epitaxial graphene on SiC(0001)

We developed an easy, upscalable process to prepare lateral spin-valve devices on epitaxially grown monolayer graphene on SiC(0001) and perform nonlocal spin transport measurements. We observe the longest spin relaxation times τ(S) in monolayer graphene, while the spin diffusion coefficient D(S) is strongly reduced compared to typical results on exfoliated graphene. The increase of τ(S) is probably related to the changed substrate, while the cause for the small value of D(S) remains an open question.