印刷电路板缺陷检测的实际应用

电路板在我们的日常生活中非常常见,这就使得印刷电路板的缺陷检测显得尤为重要。AOI作为新兴的检测PCB板缺陷的系统,在生产实际中正在被大家熟知并且应用。相较于传统的检测方式,AOI系统比较灵活,无论是在检测时间还是系统运算上,或者是对相关技术人员的要求相较于传统方式都比较有优势,本文就AOI系统在实际中的应用展开讨论,分析并且介绍了在实际应用中的具体细则。     

Design and performance study of phase‐locked loop using fractional‐order loop filter

The present work reports the realization of an analog fractional‐order phase‐locked loop (FPLL) using a fractional capacitor. The expressions for bandwidth, capture range, and lock range of the FPLL have been derived analytically and then compared with the experimental observations using LM565 IC. It has been observed that bandwidth and capture range can be extended by using FPLL. It has also been found that FPLL can provide faster response and lower phase error at the time of switching compared to its integer‐order counterpart. Copyright © 2014 John Wiley & Sons, Ltd.     

以用户为中心的可见光通信协作传输中训练资源分配算法

以用户为中心的可见光通信协作传输是近年来出现的新架构,这导致虚拟小区之间出现重叠。为避免导频污染问题,每个虚拟小区中的光接入点(AP)或者虚拟小区中选择相同AP的用户发送的训练序列应该是正交的。针对可见光通信中以用户为中心的协作网络,研究训练资源的正交分配问题,提出了一种新的导频分配算法,联合导频分配和用户选择问题,以期最大限度地增加虚拟小区内可被接入的用户数。分析和仿真结果表明,该导频分配方案可以有效改善导频污染问题,提高训练资源利用率,并且相比已有的导频分配方案,性能有所改进。     

Computational Fluid Dynamics Study on a Top-Blown Smelting Process with Lance Failure in an Isa Furnace

JOM - The Isa/Ausmelt smelting technology with a top submerged lance (TSL) has been extensively used in copper smelting processes. However, the TSL is extremely vulnerable to damage and failure...     

以太网相关技术标准规范与标准组织简介(三)

中首先介绍电气与电子工程师学会(IEEE)组织概况，然后概括说明了IEEE关于局域网／城域网IEEE802．2标准系列，以太网集成电路标准图标，特别着重讨论了关于以太网的IEEE802．3系列标准，在SDH／WDM网络上传输以太网帧信号的相关规范和10吉比特以太网技术标准。最后指出，10吉比特以太网技术标准的开发和广泛应用将在通信领域展现出更加辉煌的明天。     

以奥林匹克精神为纲——中国运动鞋品牌运行之我见

2008年29届奥运会在北京举行，使得有关奥运的话题成为热门中的热门，与运动有关或无关的众多品牌、厂商对北京奥运年均寄予厚望，为赢取更大的收获和提升品牌知名度作最大的努力。其实早在几年前，国内外运动鞋品牌企业就已经大张旗鼓，在产品研发与广告宣传等多方面投入重金，为在这次北京奥运年带来的难得契机中处于市场制高点或明或隐地博杀着。     

High-performance single-mode VCSELs in the 1310-nm waveband

High-performance vertical-cavity surface-emitting lasers (VCSELs) emitting in the 1310-nm waveband are fabricated by bonding AlGaAs-GaAs distributed Bragg reflectors on both sides of a InP-based cavity. A 2-in wafer bonding process is optimized to produce very good on-wafer device parameter uniformity. Carrier injection is implemented via double intracavity contact layers and a tunnel junction. A 1.2-mW single-mode output power is obtained in the temperature range of 20/spl deg/C-80/spl deg/C. Modulation capability at 3.2 Gb/s is demonstrated up to 70/spl deg/C. Overall VCSEL performance complies with the requirements of the 10 GBASE-LX4 IEEE.802.3ae standard, which opens the way for novel applications of VCSELs emitting in the 1310-nm band.