Formation and magnetic properties of γ-Fe2O3particles surface modified with crystallized cobalt-ferrite

Acicular γ-Fe2O3particles were heated at 90°C in alkali solution containing Co²⁺and Fe²⁺with Co²⁺/Fe²⁺ratio of 0.5. The coercivity of resultant particles increased linearly with increasing the Co²⁺content, and the coercivity of 900 Oe was obtained for the particles with Co²⁺content of 7 wt%. The shape of the particles is acicular, and an appreciable variation of morphology by the treatment in alkali solution was not observed. Cobalt-ferrite was expected to crystallize epitaxially on the surface of γ-Fe2O3particles, and the increase of coercivity was attributed to the magnetic anisotropy of the cobalt-ferrite. A variation of coercivity by annealing at 60°C and print-through were small compared with those of the particles in which iron were homogeneously substituted by cobalt ions. Such stability was explained by considering that a very high concentration of cobalt ions exist only on the surface of γ-Fe2O3particles, and the migration of cobalt ions is extremely difficult.     

A low-noise microwave oscillator employing a self-alignedAlGaAs/GaAs HBT

A study is made of the application of heterojunction bipolar transistors (HBTs) to low-noise microwave circuits. Design considerations and the low-noise performance of a Ku-band free-running oscillator using a self-aligned AlGaAs/GaAs HBT are described. The device has a novel structure in which, by utilizing SiO ₂ sidewalls, the base surface area, which is the main cause of low-frequency noise, is drastically reduced. For a collector current of 1 mA, the fabricated device has base current noise power densities of 4×10^-20, 6×10^-21, and 2.5×10^-21 A²/Hz at baseband frequencies of 1, 10, and 100 kHz, respectively. A prototype oscillator operating at 15.5 GHz has a measured output power of 6 dBm and SSB FM noise power densities of -34 dBc/Hz at 1 kHz, -65 dBc/Hz at 10 kHz, and -96 dBc/Hz at 100 kHz off-carrier, without using high-Q elements such as a dielectric resonator. The results of this study demonstrate the suitability of HBTs for low-phase-noise microwave and millimeter-wave oscillator applications     

Radiation source dependence of performance degradation in thin gate oxide fully-depleted SOI n-MOSFETs

The degradation of the electrical performance of thin gate oxide fully depleted SOI n-MOSFETs and its dependence on the radiation particles are investigated. The transistors are irradiated with 7.5-MeV protons and 2-MeV electrons at room temperature without bias. The shift of threshold voltage and the coupling effect with the degraded opposite gate are clarified. A remarkable reduction of the floating body effects is observed after irradiation. The degradation of the extracted parameters is discussed by a comparison with the damage coefficients.     

High-linearity and small-chip AlGaAs/GaAs power HBTs for L-bandpersonal digital cellular applications

A high-linearity AlGaAs/GaAs power heterojunction bipolar transistor (HBT) is developed for personal digital cellular phones. For compact chip layout, thermal design was considered. To improve power performance, proton implantation, optimum alloy condition for collector electrodes, and multiple via holes were used. A 2400-μm²-emitter-area HBT fabricated on a 0.5×0.67 mm² substrate exhibits adjacent channel leakage powers below -53 dBc for 0.95- and 1.5-GHz π/4-shifted QPSK modulated input signals at a low collector-emitter voltage of 3.4 V. The HBT produces a 31.7-dBm output power, 50% power-added efficiency, and 15-dB linear power gain at 0.95 GHz, and produced a 31.3-dBm output power, 52% power-added efficiency, and 11.5-dB linear power gain at 1.5 GHz. These results were achieved on about one-fifth of the substrate area of conventional GaAs FETs     

Morphology of iron fine particles

The process of formation of iron fine particles from goethite microcrystals was investigated by means of powder X-ray diffraction, gas adsorption, and electron microscopy. In the first process, microporous hematite particles were prepared by decomposing goethite particles. The pores formed in hematite particles were slit-shaped (width : 0.9 nm). In the second process, microporous hematite particles were reduced at 250-350°C under the flow of hydrogen gas, and the reduction degree R (%) was determined. In the sample of R=8%, mesopores of 4 - 8 nm were formed by aggregation of slit-shaped micropores, but the skeleton of acicular particles was not significantly altered. With the progress in reduction, a number of crystallites were formed in the parent particles together with growth of pore size. In the sample of R=72%, the crystallites were separated from the parent particles. Finally, the separated crystallites sintered to give granular iron particles having low coercivity of 375 Oe. It was found that alumina or silica gel coated on the surface of goethite particles was remarkably effective for preventing the separation and sintering of crystallites formed in the parent particles. The silica-coated iron fine particles consisting of the crystallites which were as large as single domain particles showed excellent acicular shape and high coercivity of 1600 - 1700 Oe.     

A new patterning process concept for large-area transistor circuitfabrication without using an optical mask aligner

A new concept to produce large thin film transistor liquid crystal displays (TFT-LCD's) without using an optical mask aligner is proposed which emphasizes patterning technology. Some experimental thin film transistors (TFT's) are fabricated according to the concept and operated like conventional transistors fabricated by using an optical mask aligner. The concept includes improvement of printing technology and development of a double-layer resist method. The latter method employs a printed ink pattern and a photoresist. This prevents contamination of thin films by metal impurities which affect electrical characteristics of the TFT's. A special gravure offset printing technology is proposed, composed of a large thixotropy valued UV ink, and a fine, precision etched glass intaglio. The experimental TFT's, with a designed minimum gate length of 10 μm, have comparable electric characteristics to those of conventional poly-Si TFT's     

Novel process for emitter-base-collector self-aligned heterojunction bipolar transistor using a pattern-inversion method

A process for base-emitter-collector self-aligned HBTs using a pattern-inversion method is presented. A fabricated HBT has an emitter with a size of 1.5 × 10?m2 realised by employing a dry-etching method. Typical current gain for the fabricated HBT is 26.     

Recent developments of rotary forming in Japan

Rotary forming is a method of forming various axisymmetric profiles by a rotary compressive process. This process has developed into an advanced technology capable of producing an ever growing range of products due to the recent developments of rotary forming machines. The recent trends of research and development of rotary forming in Japan are described.     

Terpolymer films having semipolar structure: Preparation,wettability, and mechanical properties

A terpolymer, obtained by the free‐radical terpolymerization of 2‐(N,N‐dimethylamino)ethyl methacrylate (DMMA), methyl methacrylate(MMA), and isobutyl methacrylate (IBMA), was allowed to react with hydrogen peroxide, chloroacetic acid, and diethyl sulfate to form the corresponding modified terpolymers: (1) N,N‐dimethyl‐N‐(2‐methacryloyloxyethyl)amine N‐oxide, MMA and IBMA (DMANO series); (2) N‐(carboxymethyl)‐N,N‐dimethyl‐ N‐(2‐methacryloyloxyethyl)ethyl ammonium, MMA and IBMA (CDME series); and (3) N‐(ethyl)‐N,N‐dimethyl‐N‐(2‐methacryloyloxyethyl)ethyl ammonium ethylsulfonate, MMA and IBMA (EDMEES series), respectively. The terpolymer compositions were determined using ¹³C NMR spectrometry. Surface free energies of the terpolymers were estimated by measuring the contact angles of water and methylene iodide on the three series films (DMANO, CDME, and EDMEES), and the effect of the N‐oxide group on wettability was discussed. It was found that the upper surface of the films for the DMANO and CDME series are more hydrophobic than that for the EDMEES series. Notably, elongation to break for the DMANO series was relatively larger than that for the CDME series because of the water bound to the N‐oxide functional group. © 2005 Wiley Periodicals, Inc. J Appl Polym Sci 98: 1235–1243, 2005