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排序方式: 共有814条查询结果,搜索用时 15 毫秒
1.
One month following the Great Hanshin Earthquake of January 17, 1995, we conducted a survey of 173 hospitals in Aichi Prefecture to pinpoint problems related to their actual disaster-readiness and the medical backup systems in place to deal with such disasters. This study revealed that staff at 50% of the surveyed hospitals could reach the hospital within an hour, but that communication is almost entirely dependent on phone lines, suggesting that cordless/portable/mobile phones, radio systems, Internet, communications satellites and the like should be studied in the days to come for possible use as effective communication alternatives in times of disaster. Whereas 92% of the surveyed hospitals had manuals dealing with fire outbreaks, other areas were less well represented. For example, only 36.9% of surveyed hospitals had manuals for earthquakes, 31.7% had manuals for power outages and 14.2% had manuals to deal with flooding and water disasters. New manuals must be developed incorporating the key points garnered from experience (especially Hanshin) and be ready for use immediately. It is the time for each hospital to seriously rethink the measures it should take to deal with disasters. 相似文献
2.
[110]-surface strained-SOI CMOS devices 总被引:1,自引:0,他引:1
Mizuno T. Sugiyama N. Tezuka T. Moriyama Y. Nakaharai S. Takagi S. 《Electron Devices, IEEE Transactions on》2005,52(3):367-374
We have newly developed [110]-surface strained-silicon-on-insulator (SOI) n- and p-MOSFETs on [110]-surface relaxed-SiGe-on-insulator substrates with the Ge content of 25%, fabricated by applying the Ge condensation technique to SiGe layers grown on [110]-surface SOI wafers. We have demonstrated that the electron and the hole mobility enhancement of [110]-surface strained-SOI devices amounts to 23% and 50%, respectively, against the mobilities of [110]-surface unstrained MOSFETs. As a result, the electron and the hole mobility ratios of [110]-surface strained-SOI MOSFETs to the universal mobility of (100)-surface bulk-MOSFETs increase up to 81% and 203%, respectively. Therefore, the current drive imbalance between n- and p-MOS can be reduced. Moreover, both the electron and the hole mobilities of the [110]-surface strained-SOIs strongly depend on the drain current flow direction, which is qualitatively explained by the anisotropic effective mass characteristics of the carriers on a [110]-surface Si. As a result, the [110]-surface strained-SOI technology with optimization of the current flow directions of n- and p-MOS is promising for realizing higher speed scaled CMOS. 相似文献
3.
Shijie Zhu Yutaka Kagawa Jian-Wu Cao Mineo Mizuno 《Metallurgical and Materials Transactions A》2004,35(9):2853-2859
Time-dependent deformation in an enhanced SiC/SiC composite has been studied under constant load at high temperatures of 1200
°C, 1300 °C, and 1400 °C. Creep damage evolution was evaluated by a Young’s-modulus change of partial unloading and microscopic
observation. The addition of the glassy phase in the matrix is very effective for protecting the composite from oxidation.
The transient creep is dominant in creep life at all the temperatures. An empirical equation is proposed to describe creep
behavior of the composite. It is found that creep activation energy increases with creep time at stresses lower than matrix
cracking stress, but the activation energy remains constant at stresses higher than the matrix cracking stress. The creep
strain rate of the composite is considered to be controlled by creep of fibers based on examining the time, strain, stress,
and temperature dependencies of creep strain rates. 相似文献
4.
A compact, high-resolution analog-to-digital converter (ADC) especially for sensors is presented. The basic structure is a completely digital circuit including a ring-delay-line with delay units (DUs), along with a frequency counter, latch, and encoder. The operating principles are: (1) the delay time of the DU is modulated by the analog-to-digital (A/D) conversion voltage and (2) the delay pulse passes through a number of DUs within a sampling (= integration) time and the number of DUs through which the delay pulse passes is output as conversion data. Compact size and high resolution were realized with an ADC having a circuit area of 0.45 mm/sup 2/ (0.8-/spl mu/m CMOS) and a resolution of 12 /spl mu/V (10 kS/s). Its nonlinearity is /spl plusmn/0.1% FS per 200-mV span (1.8-2.0 V), for 14-b resolution. Sample holds are unnecessary and a low-pass filter function removes high-frequency noise simultaneously with A/D conversion. Thus, the combination of this ADC and a digital filter that follows can eliminate an analog prefilter to prevent the aliasing before A/D conversion. Also, both this ADC can be shrunk and operated at low voltages, so it is an ideal means to lower the cost and power consumption. Drift errors can be easily compensated for by digital processing. 相似文献
5.
T. Shimada M. Mizuno K. Kurachi N. Kato O. Sakurada M. Hashiba Y. Nurishi 《Journal of Materials Science》1996,31(14):3691-3695
Low thermal expansion coefficient and high mechanical strength have been attained simultaneously in a composite with microstructures in which the low thermal expansion grains are surrounded by a continuous texture of the grains with high strength. Alloying eucryptite with yttria-stabilized PSZ (partially stabilized zirconia) simultaneously achieved the low thermal expansion coefficient, 1.45 × 10–6, and the high bending strength, 220 MPa, by adjusting the composition and controlling the microstructures by changing the starting powders and the milling durations. Grain size and reactions between the coupled materials determined the critical processing conditions. 相似文献
6.
T. Nozokido J. J. Chang C. M. Mann T. Suzuki K. Mizuno 《Journal of Infrared, Millimeter and Terahertz Waves》1994,15(11):1851-1865
We have designed a mixer Schottky barrier diode (SBD) for use in the submillimeter wave region with a structure optimized for minimum noise temperature. The dependence of mixer noise temperature upon thickness and doping density of the epitaxial layer and diode diameter of SBDs was simulated within the framework of existing theories. Special care was taken to formulate the SBD current-voltage and capacitance-voltage relations in a way that correctly describes the behavior of real SBDs. 相似文献
7.
The desire to work is deeply rooted in the human psyche and involves both intrinsic and extrinsic factors. If this is indeed the case, then this form of human activity should be considered to be an important element of our lives and therefore worthy of intervention when circumstances restrict an individual's engagement with it. To investigate the therapeutic nature of work for people with enduring mental health problems, the author conducted a pilot case study of a work rehabilitation scheme in the United Kingdom. The main theme to emerge from the study was that of purposeful activity. 相似文献
8.
S Mori T Konishi K Matsuoka M Deguchi M Ohta O Mizuno T Ueno T Okinaka Y Nishimura N Ito T Nakano 《Canadian Metallurgical Quarterly》1998,37(7):606-610
We report a nephrotic syndrome patient with eosinophilia who developed ileus, epigastralgia and malabsorption due to strongyloidiasis which became symptomatic by steroid therapy. The patient was then treated with thiabendazole and recovered. A percutaneous renal biopsy revealed minimal change nephrotic syndrome. This renal injury may be brought on by severe infection of Strongyloides stercoralis. It is important to rule out strongyloidiasis prior to corticosteroid therapy to patients from eosinophilia endemic areas. 相似文献
9.
Catalytic dehydrogenative coupling of methane on active carbon. Effect of metal supported on active carbon 总被引:3,自引:0,他引:3
Ethane, ethene, ethyne and hydrogen are obtained in good yields via dehydrogenative coupling of methane in the presence of active carbon as a catalyst. The product yield is increased by supporting metal on active carbon. 相似文献
10.
Masahiro Tajima Miki Niwa Yasushi Fujii Yutaka Koinuma Reiji Aizawa Satoshi Kushiyama Satoru Kobayashi Koichi Mizuno Hideo Ohuˆchi 《Applied catalysis. B, Environmental》1997,12(4):1418
The decomposition of chlorofluorocarbons (CFCs) in the presence of water was examined over a variety of solid acid catalysts. The TiO2ZrO2 catalyst was found to have the highest activity and longest life among the catalysts examined. The activity of the TiO2ZrO2 catalysts depended upon the content of TiO2. At the contents of TiO2 from 58 to 90 mole%, the TiO2ZrO2 catalysts exhibited high activity, and these catalysts were proven to contain TiZrO4 crystal. From the study of the XRD peak intensity of the TiZrO4 crystal, it was highest on the TZ-58 which contained 58 mole% of TiO2, and decreased with increasing the content of TiO2. Furthermore, the conversion of CFC113 measured at 673 K was highest at TZ-58, and decreased gradually with increasing TiO2 content. Therefore, the TiZrO4 crystal influences the activity of decomposition of CFC113. However, the TiO2ZrO2 catalyst was gradually deactivated during the reaction due to the elimination of titanium atoms. A good relationship was found between the activity on TiO2ZrO2 catalyst and bond energy of CCl in the compounds of chlorofluorocarbons and hydrochlorocarbons, suggesting that the rate controlling step was the cleavage of CCl bond. 相似文献