The study on the conductivity of styrene-maleic anhydride copolymer electrolytes based on poly(ethylene glycol)400 and LiClO4

Polyelectrolytes, in this study were synthesized from styrene-maleic anhydride (SMA) copolymer, poly(ethylene glycol)400 (PEG400), and lithium perchlorate (LiClO₄). Fourier transform infrared spectroscopy (FTIR), and magic angle spinning (MAS) solid-state NMR were used to monitor the interaction between Li⁺ ions and polymer. The results of FTIR and MAS solid-state NMR indicate the Li⁺ ions are preferentially coordinated to the ether oxygen of PEG. The T_g of the PEG segments in polyelectrolyte increases with LiClO₄ concentration, as determined by differential scanning calorimetry (DSC), indicating that solubility of the Li⁺ ions in the host polymer increases with the PEG content. Impedance spectroscopy (IS) shows that the bulk conductivity of polyelectrolytes and the conductivity behavior obeys the Vogel-Tamman-Fulcher (VTF) equation.     

Bounds on multipartite concurrence and tangle

We present an analytical lower bound of multipartite concurrence based on the generalized Bloch representations of density matrices. It is shown that the lower bound can be used as an effective entanglement witness of genuine multipartite entanglement. Tight lower and upper bounds for multipartite tangles are also derived. Since the lower bounds depend on just part of the correlation tensors, the result is experimentally feasible.     

Lower bound on concurrence for arbitrary-dimensional tripartite quantum states

In this paper, we study the concurrence of arbitrary-dimensional tripartite quantum states. An explicit operational lower bound of concurrence is obtained in terms of the concurrence of substates. A given example shows that our lower bound may improve the well-known existing lower bounds of concurrence. The significance of our result is to get a lower bound when we study the concurrence of arbitrary \(m\otimes n\otimes l\)-dimensional tripartite quantum states.     

Monogamy relations of concurrence for any dimensional quantum systems

We study monogamy relations for arbitrary dimensional multipartite systems. Monogamy relations based on concurrence and concurrence of assistance for any dimensional \(m_1\otimes m_2\otimes \cdots \otimes m_{N}\) quantum states are derived, which give rise to the restrictions on the entanglement distributions among the subsystems. Besides, we give the lower bound of concurrence for four-partite mixed states. The approach can be readily generalized to arbitrary multipartite systems.     

A Quantum Correction Model for Nanoscale Double-Gate MOS Devices Under Inversion Conditions

A quantum correction model for nanoscale double-gate MOSFETs under inversion conditions is proposed. Based on the solution of Schrödinger-Poisson equations, the developed quantum correction model is optimized with respect to (i) the left and right positions of the charge concentration peak, (ii) the maximum of the charge concentration, (iii) the total inversion charge sheet density, and (iv) the average inversion charge depth, respectively. This model can predict inversion layer electron density for various oxide thicknesses, silicon film thicknesses, and applied voltages. Compared to the Schrödinger-Poisson results, our model prediction is within 3.0% of accuracy. This quantum correction model has continuous derivatives and is therefore amenable to a device simulator.     

Coherence generating power of unitary transformations via probabilistic average

We study the ability of a quantum channel to generate quantum coherence when it applies to incoherent states. Based on probabilistic averages, we define a measure of such coherence generating power (CGP) for a generic quantum channel, based on the average coherence generated by the quantum channel acting on a uniform ensemble of incoherent states. Explicit analytical formula of the CGP for any unitary channels are presented in terms of subentropy. An upper bound for CGP of unital quantum channels has been also derived. Detailed examples are investigated.     

Properties of (Fe-B)-doped Sn-1.0Ag-0.5Cu solders prepared by mechanical alloying

To introduce boron(B)into the Sn-1.0Ag-0.5Cu(SAC 105)solder,based on the thermodynamic calculations,iron(Fe)is a competent carrier component for bonding B and Sn.The Sn-Fe-B master alloys were prepared by mechanical alloying initially;then,the SAC105-0.05(Fe-B)and SAC105-0.1(Fe-B)solder alloys were prepared using 72-h-milling Sn-Fe-B master alloys.The preparation process and the properties of solders were studied in this work.For the Sn-Fe-B master alloys,the results show that with the increase in the ball-milling time,the powder changes illustrate a cold welding-crushingcold welding cyclic process.Moreover,the supersaturated solid solubility of(Fe-B)increases gradually in the alloys' matrix and the lattice distortion increases to 0.167% after 72-h milling.Meanwhile,the alloying degree is increasingly apparent,and after 72-h milling,the content of B in the Sn matrix reaches 2.38 wt%.For the solder alloys,with the(Fe-B)content increasing,the melting point decreases and a significant grain refinement occurs in the matrix.Compared to the benchmark SAC105,the hardness of SAC105-0.05(Fe-B)and SAC 105-0.1(Fe-B)solder alloys prepared by this method is improved by 20.65% and 34.79%,respectively.The present research provides a novel approach for introducing the immiscible component into the lead-free solder alloys.     

Shield tunneling and environment protection in Shanghai soft ground

Large scale and intensive metro construction through dense urban area increases sharply the impaction on risk control and environment protection. Three typical cases of shield crossing building above ground (SCBA), shield crossing tunnel from above (SCTA) and shield crossing tunnel from below (SCTB) are studied, respectively, based on field measurements and site investigations of actual projects in Shanghai soft ground. The risks of shield crossing sensitive buildings and subways, ground movement prediction and its control regulations, the settings of shield driving parameters such as earth pressure, driving speed, postures and grouting are demonstrated and summarized in detail. It is proposed that stringent stipulations on controlling ground volume loss (GVL) ratio (GVLR) and strengthened monitoring measures are necessary and substantial for eliminating/reducing potential construction risks. It is urgently decisive to improve the performance of shield machine and to make it more flexible for counteracting complications of geology and environment, as refer to the present status of shields in Shanghai, most of them being overused or out of date.     

Analysis of shearing effect on tunnel induced by load transfer along longitudinal direction

In order to analyze the behavior of load transfer mechanism of shield-constructed tunnel in longitudinal direction, tunnel is modeled as the cylindrical shell within elastic foundation (CSEF). By applying the theory of elastic cylindrical shell (ECS) with considering shear deformation and assumed displacement functions of trigonometric series, the distribution of stress and deformation in tunnel lining is obtained. In the solution, the stiffness of tunnel lining is decomposed into two components of circumferential and radial stiffness. The effects of both components on the behavior of deformation and internal forces of tunnel lining are discussed in details. By using the proposed solution, more reasonable results on the behavior of tunnel lining are obtained, e.g bending moment in tunnel cross section becomes smaller with the increase of the circumferential shear stiffness. The analytical results are verified by the results of 3D FEM analysis and field measured data. In accordance with the proposed analytical method, the tunnel lining in soft ground should be designed via considering the following aspects: (i) three dimensional effect of tunnel lining; (ii) relatively weaker shear stiffness in radial direction, and (iii) increase the circumferential shear resistance between rings.     

Strained CMOS Devices With Shallow-Trench-Isolation Stress Buffer Layers

In this brief, shallow-trench-isolation (STI) stress buffer techniques, including sidewall stress buffer and channel surface buffer layers, are developed to reduce the impact of compressive STI stress on the mobility of advanced n-type MOS (NMOS) devices. Our investigation shows that a 7% driving current gain at an NMOS device has been achieved, whereas no degradation at a p-type MOS (PMOS) device was observed. The same junction leakage at both the NMOS and PMOS devices was maintained. A stress relaxation model with simulation is thus proposed to account for the enhanced transport characteristics.