Decomposition of timed automata for solving scheduling problems

A decomposition algorithm for scheduling problems based on timed automata (TA) model is proposed. The problem is represented as an optimal state transition problem for TA. The model comprises of the parallel composition of submodels such as jobs and resources. The procedure of the proposed methodology can be divided into two steps. The first step is to decompose the TA model into several submodels by using decomposable condition. The second step is to combine individual solution of subproblems for the decomposed submodels by the penalty function method. A feasible solution for the entire model is derived through the iterated computation of solving the subproblem for each submodel. The proposed methodology is applied to solve flowshop and jobshop scheduling problems. Computational experiments demonstrate the effectiveness of the proposed algorithm compared with a conventional TA scheduling algorithm without decomposition.     

Fabrication of sub-micron structures for MEMS using deep X-ray lithography

Fabrication techniques of microstructures with high resolution and high aspect ratio are necessary for practical microelectromechanical systems (MEMS) that have high performance and integration. In order to fabricate microstructures with sub-micron resolution and high aspect ratio, deep X-ray lithography has been investigated using the compact synchrotron radiation (SR) light source called “AURORA”. An X-ray mask for sub-micron deep X-ray lithography, which is composed of 1 μm thick Au as absorbers, 2 μm thick SiC as a membrane and 625 μm thick Si as a frame, was designed. In preliminary experiments, the following results were achieved: EB resist microstructures with an aspect ratio of 22 corresponding with 0.07 μm width and 1.3 μm height were formed; a 10 μm thick PMMA resist containing no warp was formed by direct polymerization, enabling more precise gap control.     

An atomic force microscope study of surface roughness of thin silicon films deposited on SiO/sub 2/

Atomic force microscope analysis, with a resolution of /spl lsim/1.1 nm, shows that peak-to-peak surface roughness (/spl Delta/h/sub p-p/) of amorphous silicon films thinner than /spl ap/50 nm on silicon dioxide can be controlled to better than 5 nm. Low-pressure, chemically-vapor-deposited silicon films on silicon dioxide initially show an approximately linear increase in the surface roughness due to growing nuclei as the deposition progresses, followed by a decrease in the surface roughness as growth nuclei coalesce. A simple model based on random nucleation and nuclei growth displays similar trends. Films deposited on rougher substrates show more surface roughness. Surface treatment during the predeposition cleaning process does not significantly affect /spl Delta/h/sub p-p/. As a means of producing smooth surfaces, films thinner than about 20 nm are first deposited more thickly than needed, and then etched back to the desired dimension; the use of a binary HNO/sub 3/ and HF etching process improves roughness control. Boron-ion implanted and subsequently crystallized 45-nm-thick Si films show significant smoothing with /spl Delta/h/sub p-p//spl ap/2.2 nm. Thin amorphous silicon films deposited by source evaporation are attractive because they can be deposited at room temperature, and have smoother surfaces (/spl Delta/h/sub p-p//spl ap/2.5 nm) than comparable films produced by chemical vapor deposition.     

Rolling and swaying motion estimation for a mobile robot by using omnidirectional optical flows

Described here is a method for estimating rolling and swaying motions of a mobile robot using optical flow. We have proposed an image sensor with a hyperboloidal mirror for the vision-based navigation of a mobile robot. Its name is HyperOmni Vision. The radial component of optical flow in HyperOmni Vision has a periodic characteristic. The circumferential component of optical flow has a symmetric characteristic. The proposed method makes use of these characteristic to estimate robustly the rolling and swaying motion of the mobile robot. Correspondence to: Y. Yagi e-mail: y-yagi@sys.es.osaka-u.ac.jp     

Human Chorionic Villous Differentiation and Placental Development

In humans, the placenta provides the only fetomaternal connection and is essential for establishing a pregnancy as well as fetal well-being. Additionally, it allows maternal physiological adaptation and embryonic immunological acceptance, support, and nutrition. The placenta is derived from extra-embryonic tissues that develop rapidly and dynamically in the first weeks of pregnancy. It is primarily composed of trophoblasts that differentiate into villi, stromal cells, macrophages, and fetal endothelial cells (FEC). Placental differentiation may be closely related to perinatal diseases, including fetal growth retardation (FGR) and hypertensive disorders of pregnancy (HDP), and miscarriage. There are limited findings regarding human chorionic villous differentiation and placental development because conducting in vivo studies is extremely difficult. Placental tissue varies widely among species. Thus, experimental animal findings are difficult to apply to humans. Early villous differentiation is difficult to study due to the small tissue size; however, a detailed analysis can potentially elucidate perinatal disease causes or help develop novel therapies. Artificial induction of early villous differentiation using human embryonic stem (ES) cells/induced pluripotent stem (iPS) cells was attempted, producing normally differentiated villi that can be used for interventional/invasive research. Here, we summarized and correlated early villous differentiation findings and discussed clinical diseases.     

High-mobility ultrathin strained Ge MOSFETs on bulk and SOI with low band-to-band tunneling leakage: experiments

For the first time, the tradeoffs between higher mobility (smaller bandgap) channel and lower band-to-band tunneling (BTBT) leakage have been investigated. In particular, through detailed experiments and simulations, the transport and leakage in ultrathin (UT) strained germanium (Ge) MOSFETs on bulk and silicon-on-insulator (SOI) have been examined. In the case of strained Ge MOSFETs on bulk Si, the resulting optimal structure obtained was a UT low-defect 2-nm fully strained Ge epi channel on relaxed Si, with a 4-nm Si cap layer. The fabricated device shows very high mobility enhancements >3.5/spl times/ over bulk Si devices, 2/spl times/ mobility enhancement and >10/spl times/ BTBT reduction over 4-nm strained Ge, and surface channel 50% strained SiGe devices. Strained SiGe MOSFETs having UT (T/sub Ge/<3 nm) very high Ge fraction (/spl sim/ 80%) channel and Si cap (T/sub Si cap/<3 nm) have also been successfully fabricated on thin relaxed SOI substrates (T/sub SOI/=9 nm). The tradeoffs in obtaining a high-mobility (smaller bandgap) channel with low tunneling leakage on UT-SOI have been investigated in detail. The fabricated device shows very high mobility enhancements of >4/spl times/ over bulk Si devices, >2.5/spl times/ over strained silicon directly on insulator (SSDOI; strained to 20% relaxed SiGe) devices, and >1.5/spl times/ over 60% strained SiGe (on relaxed bulk Si) devices.     

A biped walking robot capable of moving on a vertical wall

The use of a wall-climbing robot for purposes such as rescue, wall inspection and fire-fighting on high-rise buildings has been anticipated for a long time. Three different types of wall-climbing robots have been developed in Japan. The first one has a large area sucker, which has the reverse mechanism of a hovercraft. This type can be used only on flat and wide surfaces. The second one has crawlers to move on a vertical wall with many small suckers on them. The third one has a walking mechanism with small suckers on each foot. A biped walking model was built and tested on a vertical wall and a ceiling. The aerodynamic matching between blower performance and required forces of a sucker, as well as the control systems of the robot, are studied in detail.     

High-mobility low band-to-band-tunneling strained-Germanium double-gate heterostructure FETs: Simulations

Large band-to-band tunneling (BTBT) leakage currents can ultimately limit the scalability of high-mobility (small-bandgap) materials. This paper presents a novel heterostructure double-gate FET (DGFET) that can significantly reduce BTBT leakage currents while retaining its high mobility, making it suitable for scaling into the sub-20-nm regime. In particular, through one-dimensional Poisson-Schrodinger, full-band Monte Carlo, and detailed BTBT simulations, the tradeoffs between carrier transport, electrostatics, and BTBT leakage in high-mobility sub-20-nm Si-strained SiGe-Si (high germanium concentration) heterostructure PMOS DGFETs are thoroughly analyzed. The results show a dramatic (>100/spl times/) reduction in BTBT and an excellent electrostatic control of the channel while maintaining very high drive currents and switching frequencies in these nanoscale transistors.