Thermal conductivity of doped PbTe-based solid solutions with off-center impurities

The coefficients of thermopower and electrical and thermal conductivity in the PbTe_0.8Se_0.1 S _0.1 solid solution with electron concentration (4.6–54) × 10¹⁸ cm^?3 are studied in the range of 85–300 K (and in some cases up to 700 K). The temperature dependences of electrical and thermal conductivity indicate that the low-temperature electron and phonon scattering initiated by the off-center impurity of sulfur exists. The temperature dependences of the electronic and lattice components of thermal conductivity are calculated in the approximation of a parabolic spectrum and electron scattering by acoustic phonons and neutral substitutional impurities. The lattice thermal conductivity is found to have a feature in the form of a shallow minimum in the range of 85–250 K. A similar feature, while not so clearly pronounced, is found to exist also in Pb_1?x Sn_xTe_1?x Se_x alloys (x≥0.15) with an off-center tin impurity. An analysis of the possible origins of this effect suggests that, at low temperatures, the Lorentz numbers L of the materials under study are smaller than the L₀ numbers employed which correspond to the above scattering mechanisms. The cause of the decrease in L is related to electron scattering at two-level systems, a mechanism whose effect grows with increasing electron energy. An analysis of experimental data obtained at high temperatures, as well as on undoped samples with the lowest possible carrier concentrations, yields the values of L for samples with different electron densities. The minimum value L/L₀ = 0.75 is obtained for a lightly doped sample at ～130 K.     

Complex waves in nonreciprocal guiding structures

Features of complex waves excited in nonreciprocal guiding structures are considered in the case of a round shielded waveguide with a longitudinally magnetized axial ferrite core.     

Catalytic properties of composite amorphous carbon-platinum layers in fuel cells

Catalytic properties of composite amorphous carbon-platinum layers produced by magnetron cosputtering have been studied. The layers were characterized by electron microscopy, IR spectroscopy, ellipsometry, gravimetry, and spectrophotometric chemical analysis. The catalytic activity of the layers was studied in an air-hydrogen fuel cell by measuring its load and power characteristics.     

Functional characteristics of Bi2Sr2Ca2Cu3O10 + δ/ZrN composites

We present the results of investigation of the magnetic, transport, structural, and mechanical properties of composites obtained by introducing finely dispersed zirconium nitride into a matrix of a Bi₂Sr₂Ca₂Cu₃O_{10 + δ} (Bi2223) high-temperature superconductor. It is established that the introduction of ZrN particles in the range of very small concentrations (0.1–0.3 wt %) leads to a significant (more than threefold) increase in the critical current density of Bi2223 and increases the density of the composite, while the microhardness of the superconducting phase remains unchanged.     

Forming n-p junctions based on p-CdHgTe with low charge carrier density

The first results on the formation of n ⁺-p photodiodes with a long-wavelength boundary at λ_0.5 = 10.6 μm based on p-CdHgTe epilayers with a hole density of 3.3 × 10¹⁴ cm^?3 are presented. The CdHgTe layers were obtained by molecular beam epitaxy and exhibited p-type conduction in the as-grown state. The hole density and mobility were determined by means of the mobility spectrum technique. The photodiode structures were prepared by B⁺ ion implantation into as-grown p-CdHgTe epilayers without additional annealing. The R ₀ A product for the n ⁺-p photodiodes obtained is about 20 Θ cm² at 77 K.     

Terbium-doped garnet single crystals as X-ray-sensitive phosphors

The spectra of luminescence induced by synchrotron radiation in the fundamental absorption range were measured at 10 and 300 K for Czochralski-grown bulk Y₃Al₅O₁₂ single crystals doped with Tb³⁺ ions and for (Tb,La,Gd)₃Ga₅O₁₂ single crystal films grown by liquid phase epitaxy from a PbO-B₂O₃ based supercooled solution melt on Gd₃Ga₅O₁₂ substrates.     

Magnetotransport properties of type II heterojunctions based on GaInAsSb/InAs and GaInAsSb/GaSb

The results of detailed study of the magnetotransport properties of broken-gap type II heterojunctions in a GaInAsSb/InAs(GaSb) system are reported. An electron channel with a high charge-carrier mobility (as high as 50000–60000 cm²/(V s)) is observed and studied for the first time in an isotype broken-gap p-GaInAsSb/p-InAs heterostructure. The effects of electron-channel depletion and semimetal-semiconductor transition in the case of heavy doping of the quaternary alloy with acceptors are studied. Magnetotransport properties at temperatures of 4.2–200 K are studied in detail. Data on the energy spectrum and parameters of two-dimensional charge carriers at the heteroboundary are obtained. It is ascertained experimentally that, depending on the composition, either staggered (at x = 0.85) or broken-gap (at x = 0.95) heterojunctions can be formed in the Ga_1?x In_xAs_ySb_1?y /GaSb, which is confirmed by theoretical calculations. The anomalous Hall effect and negative magnetoresistance were observed in GaInAsSb/InAs:Mn grown on substrates doped heavily with Mn magnetic acceptor impurity so that the hole concentration was as high as p > 5 × 10¹⁸ cm^?3; these phenomena are caused by exchange interaction of Mn ions in InAs with high-mobility charge carriers in the electron channel at the heterointerface.     

Laser deposition of gallium nitride films

Insulating c-oriented hexagonal epitaxial gallium nitride (GaN) films have been obtained by means of pulsed laser sputtering of a gallium target in nonactivated nitrogen atmosphere. The GaN films were deposited onto (0001)-oriented sapphire substrates either directly or above a ZnO buffer layer. The laser-deposited films exhibit edge photoluminescence at 370 nm.     

Transformation of electrically active defects as a result of annealing of silicon implanted with high-energy ions

Deep-level transient spectroscopy is used to study both the concentration profiles of defects introduced into silicon during the implantation of 14-MeV boron ions and the transformation of these defects as a result of subsequent annealing at temperatures in the range from 200 to 800°C. It is ascertained that implantation gives rise to a standard set of vacancy-containing radiation defects (the oxygen-vacancy and phosphorusvacancy complexes and divacancies) and to a center with the level located at E _c − 0.57 eV. Heat treatments at temperatures of 200–300°C bring about the disappearance of all vacancy-containing complexes at a distance from the surface h > 12−9 μm. Most likely, this phenomenon is caused by the decomposition of interstitial-containing complexes located at a depth h > 12−9 μm and their annihilation with the vacancy-containing complexes. Heat treatments at higher temperatures bring about both a further narrowing of the layer that still contains the vacancy-type defects to h ≈ 6 μm at 500°C and a change in the set of observable electrically active centers in the temperature range from 400 to 500°C. Specific features of the annealing of radiation defects after high-energy ion implantation are caused by spatial separation of the vacancy-and interstitial-containing defects. Original Russian Text ? I.V. Antonova, S.S. Shaĭmeev, S.A. Smagulova, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 5, pp. 557–562.     

Oxidative-gravimetric porosimetry of macroporous silicon

A simple nondestructive method to find the internal surface area, porosity, pore diameter, and pore density in macroporous silicon with through channels is suggested and tested. The porosity p is determined from the mass loss upon anodizing, and the surface area per unit volume, S _v , from the mass of SiO₂ formed on the pore surface upon thermal oxidation. The relations are given for calculation of the average pore diameter d and pore density N from the obtained S _v and p. Dependences of the specific surface area and porosity on the resistivity of initial n-Si in the range ρ = 3–25 Θ cm have been studied for samples with ordered and self-organized “lattices” of macropores. The obtained values are within the limits p = 27–50%, S _v = 2800–6000 cm²/cm³, d = 1.9–6.5 μm, and N = 1.4?10 × 10⁶ cm^?2, in agreement with the data fumished by microscopy.