Threshold voltage uniformity and characterization of microwaveperformance for GaAs/AlGaAs high electron-mobility transistors grown onSi substrates

We report on DC and microwave characteristics for high electron-mobility transistors (HEMT's) grown on Si substrates by metal-organic chemical vapor deposition (MOCVD). Threshold voltage (V _th) distribution in a 3-in wafer shows standard deviation of V_th (σV_th) of 36 mV with V_th of -2.41 V for depletion mode HEMT's/Si and σV_th of 31 mV with V_th of 0.01 V for enhancement mode, respectively. The evaluation of V_th in a 1.95×1.9 mm² area shows high uniformity for as-grown HEMT's/Si with σV_th of 9 mV for V_th of -0.10 V, which is comparable to that for HEMT's/GaAs. Comparing the V_th distribution pattern in the area with that for annealed HEMT's/Si, it is indicated that the high uniformity of V_th is obtained irrelevant of a number of the dislocations existing in the GaAs/Si. From microwave characteristic evaluation for HEMT's with a middle-(10~50 Ω·cm) and a high-(2000~6000 Ω·cm) resistivity Si substrate using a new equivalent circuit model, it is demonstrated that HEMT's/Si have the disadvantage for parasitic capacitances and resistances originated not from the substrate resistivity but from a conductive layer at the Si-GaAs interface. The parasitic parameters, especially the capacitances, can be overcome by the reduction of electrode areas for bonding pads and by the insertion of a dielectric layer under the electrode, which bring high cut-off frequency (f_T) and maximum frequency of operation (f_max) of 24 GHz for a gate length of 0.8 (μm). These results indicate that HEMT's/Si are sufficiently applicable for IC's and discrete devices and have a potential to be substituted for HEMT's/GaAs     

Frequency measurements of 9- and 10-μm N2O lasertransitions

We have measured frequencies of N₂O transitions by heterodyning sub-Doppler fluorescence-stabilized N₂O laser radiation with that from a reference CO₂ laser. A high-resolution cavity incorporates a ribbed tube and a highly reflective grating, permitting the CW oscillation of both the 10⁰ 0-02⁰0 9-μm and the 10⁰0-00⁰1 10-μm regular bands. This is the first sub-Doppler frequency measurement of the 9-μm band. The accuracy in the determination of the rotational constants for both bands has been improved by an order of magnitude, and calculated transition frequencies are presented     

Additive effects of methyl ammonium bromide or formamidinium bromide in methylammonium lead iodide perovskite solar cells using decaphenylcyclopentasilane

Journal of Materials Science: Materials in Electronics - Fabrication and characterization of methylammonium lead iodide perovskite solar cells incorporated with methylammonium bromide (MABr),...     

Effects of the IVa element addition on the composite-processed superconducting Nb3Sn

The effect of the IVa element addition to the niobium core and that of gallium addition to the matrix on the composition, growth rate and superconducting properties of the composite-processed Nb₃Sn have been studied. The IVa elements added to the niobium core enhance the growth rate of Nb₃Sn, and prevent the grain coarsening of Nb₃Sn. A much larger amount of titanium is incorporated into Nb₃Sn than zirconium or hafnium. T_c shows a slight maximum against the IVa element concentration in the niobium core. J_c at high magnetic fields is more significantly increased by titanium addition than zirconium or hafnium additions. The gallium substitution for tin in the matrix is effective for increasing T_c and J_c in high fields, except for the specimen with Nb-Ti alloy core. The simultaneous addition of hafnium and gallium is most effective for the enhancement of J_c in high fields.     

Computer aided-molecular design of high performance nano-carbon materials: Na on graphenes

The electronic states of sodium ion (Na⁺) trapped on the model surfaces of amorphous carbon have been investigated by means of hybrid density functional theory (DFT) calculations to elucidate the nature of interaction between Na⁺/Na and the amorphous carbon surfaces. Also, direct molecular orbital-molecular dynamics (MO-MD) calculation [Tachikawa and Shimizu, J. Phys. Chem. B, 110 (2006) 20445] was applied to diffusion processes of the Na⁺ ion on the model surface of amorphous carbon. Seven models of graphene sheets (n = 7, 14, 19, 29, 37, 44 and 52, where n means numbers of rings in each carbon cluster) were considered in the present study. The B3LYP/LANL2MB calculations showed that the sodium ion is located at 2.24-2.26 Å from the graphene surfaces. The direct MO-MD calculations showed that the Na⁺ ion diffuses freely on the surface above 300 K. At higher temperature (1100 K), the Na⁺ ion moved from the center to edge region of the model surface. The nature of the interaction between Na⁺ and the amorphous carbon surfaces was discussed on the basis of theoretical results.     

Overproduction of Mpd2p suppresses the lethality of protein disulfide isomerase depletion in a CXXC sequence dependent manner

The third multicopy suppressor gene of the PDI1 deletion from Saccharomyces cerevisiae, MPD2, was isolated and characterized. The MPD2 gene encodes a protein with a putative signal sequence, ER retention signal, and a disulfide isomerase active site like sequence. The amino acid sequence around the active site like sequence is similar to the thioredoxin-like domains of PDI and PDI related proteins, although the similarity is comparatively low. A delta-pdi1 strain over-producing Mpd2p showed slow growth and was sensitive to 1 mM dithiothreitol. Mpd2p can be detected in wild type cells and is a glycoprotein. Although the MPD2 gene was not essential for growth, overexpression of the gene partially restored the maturation defect of carboxypeptidase Y caused by the PDI1 deletion. Mutagenesis analysis revealed that Mpd2p can compensate for the loss of PDI with its CXXC sequence.     

Noise characteristics of Er3+-doped fiber amplifierspumped by 0.98 and 1.48 μm laser diodes

Measured noise characteristics of Er³⁺-doped optical fiber amplifiers pumped by 0.98- and 1.48-μm laser diodes (LDs) are reported. The noise figures estimated from the beat noise between signal and spontaneous emission are 3.2 dB for pumping by 0.98-μm LD and 4.1 dB for pumping by 1.48-μm LD. The beat noise between spontaneous emission components and the spontaneous shot noise for the 0.98-μm pumping are lower than those for the 1.48-μm pumping     

Catalytic Aerobic Photo‐oxidation of a Methyl Group on a Heterocycle to Produce an Aldehyde via Homolytic C?I Bond Cleavage caused by Irradiation with Visible Light

A new catalytic method was developed for photo‐oxidizing the methyl group on aromatic heterocycles such as benzothiazole, benzoxazole, and quinoline to produce the corresponding aldehyde. This is the first report of the metal‐free catalytic synthesis of benzothiazole‐2‐carboxaldehydes using molecular oxygen as the terminal oxidant.