GaP/GaNP Heterojunctions for Efficient Solar‐Driven Water Oxidation

The growth and characterization of an n‐GaP/i‐GaNP/p⁺‐GaP thin film heterojunction synthesized using a gas‐source molecular beam epitaxy (MBE) method, and its application for efficient solar‐driven water oxidation is reported. The TiO₂/Ni passivated n‐GaP/i‐GaNP/p⁺‐GaP thin film heterojunction provides much higher photoanodic performance in 1 m KOH solution than the TiO₂/Ni‐coated n‐GaP substrate, leading to much lower onset potential and much higher photocurrent. There is a significant photoanodic potential shift of 764 mV at a photocurrent of 0.34 mA cm^?2, leading to an onset potential of ≈0.4 V versus reversible hydrogen electrode (RHE) at 0.34 mA cm^?2 for the heterojunction. The photocurrent at the water oxidation potential (1.23 V vs RHE) is 1.46 and 7.26 mA cm^?2 for the coated n‐GaP and n‐GaP/i‐GaNP/p⁺‐GaP photoanodes, respectively. The passivated heterojunction offers a maximum applied bias photon‐to‐current efficiency (ABPE) of 1.9% while the ABPE of the coated n‐GaP sample is almost zero. Furthermore, the coated n‐GaP/i‐GaNP/p⁺‐GaP heterojunction photoanode provides a broad absorption spectrum up to ≈620 nm with incident photon‐to‐current efficiencies (IPCEs) of over 40% from ≈400 to ≈560 nm. The high low‐bias performance and broad absorption of the wide‐bandgap GaP/GaNP heterojunctions render them as a promising photoanode material for tandem photoelectrochemical (PEC) cells to carry out overall solar water splitting.     

Chromium removal from electroplating wastewater by coir pith

Coir pith is a by-product from padding used in mattress factories. It contains a high amount of lignin. Therefore, this study investigated the use of coir pith in the removal of hexavalent chromium from electroplating wastewater by varying the parameters, such as the system pH, contact time, adsorbent dosage, and temperature. The maximum removal (99.99%) was obtained at 2% (w/v) dosage, particle size <75microm, at initial Cr(VI) 1647mgl(-1), system pH 2, and an equilibrium time of 18h. The adsorption isotherm of coir pith fitted reasonably well with the Langmuir model. The maximum Cr(VI) adsorption capacity of coir pith at 15, 30, 45 and 60 degrees C was 138.04, 197.23, 262.89 and 317.65mgCr(VI)g(-1) coir pith, respectively. Thermodynamic parameters indicated an endothermic process and the adsorption process was favored at high temperature. Desorption studies of Cr(VI) on coir pith and X-ray absorption near edge structure (XANES) suggested that most of the chromium bound on the coir pith was in Cr(III) form due to the fact that the toxic Cr(VI) adsorbed on the coir pith by electrostatic attraction was easily reduced to less toxic Cr(III). Fourier transform infrared (FT-IR) spectrometry analysis indicated that the carbonyl (CO) groups and methoxy (O-CH(3)) groups from the lignin structure in coir pith may be involved in the mechanism of chromium adsorption. The reduced Cr(III) on the coir pith surface may be bound with CO groups and O-CH(3) groups through coordinate covalent bonding in which a lone pair of electrons in the oxygen atoms of the methoxy and carbonyl groups can be donated to form a shared bond with Cr(III).     

Energy Upconversion in GaP/GaNP Core/Shell Nanowires for Enhanced Near‐Infrared Light Harvesting

Semiconductor nanowires (NWs) have recently gained increasing interest due to their great potential for photovoltaics. A novel material system based on GaNP NWs is considered to be highly suitable for applications in efficient multi‐junction and intermediate band solar cells. This work shows that though the bandgap energies of GaN_xP_1‐x alloys lie within the visible spectral range (i.e., within 540–650 nm for the currently achievable x < 3%), coaxial GaNP NWs grown on Si substrates can also harvest infrared light utilizing energy upconversion. This energy upconversion can be monitored via anti‐Stokes near‐band‐edge photoluminescence (PL) from GaNP, visible even from a single NW. The dominant process responsible for this effect is identified as being due to two‐step two‐photon absorption (TS‐TPA) via a deep level lying at about 1.28 eV above the valence band, based on the measured dependences of the anti‐Stokes PL on excitation power and wavelength. The formation of the defect participating in the TS‐TPA process is concluded to be promoted by nitrogen incorporation. The revealed defect‐mediated TS‐TPA process can boost efficiency of harvesting solar energy in GaNP NWs, beneficial for applications of this novel material system in third‐generation photovoltaic devices.     

Fabry–Perot Microcavity Modes in Single GaP/GaNP Core/Shell Nanowires

Semiconductor nanowires (NWs) are attracting increasing interest as nanobuilding blocks for optoelectronics and photonics. A novel material system that is highly suitable for these applications are GaNP NWs. In this article, we show that individual GaP/GaNP core/shell nanowires (NWs) grown by molecular beam epitaxy on Si substrates can act as Fabry‐Perot (FP) microcavities. This conclusion is based on results of microphotoluminescence (μ‐PL) measurements performed on individual NWs, which reveal periodic undulations of the PL intensity that follow an expected pattern of FP cavity modes. The cavity is concluded to be formed along the NW axis with the end facets acting as reflecting mirrors. The formation of the FP modes is shown to be facilitated by an increasing index contrast with the surrounding media. Spectral dependence of the group refractive index is also determined for the studied NWs. The observation of the FP microcavity modes in the GaP/GaNP core/shell NWs can be considered as a first step toward achieving lasing in this quasidirect bandgap semiconductor in the NW geometry.     

Optical properties of GaP/GaNP core/shell nanowires: a temperature-dependent study

Recombination processes in GaP/GaNP core/shell nanowires (NWs) grown on Si are studied by employing temperature-dependent continuous wave and time-resolved photoluminescence (PL) spectroscopies. The NWs exhibit bright PL emissions due to radiative carrier recombination in the GaNP shell. Though the radiative efficiency of the NWs is found to decrease with increasing temperature, the PL emission remains intense even at room temperature. Two thermal quenching processes of the PL emission are found to be responsible for the degradation of the PL intensity at elevated temperatures: (a) thermal activation of the localized excitons from the N-related localized states and (b) activation of a competing non-radiative recombination (NRR) process. The activation energy of the latter process is determined as being around 180 meV. NRR is also found to cause a significant decrease of carrier lifetime.