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Filatova E. O. Sokolov A. A. Taracheva E. Yu. Bagrov I. V. 《Technical Physics Letters》2009,35(1):70-72
The state of the surface of standard phosphorus-doped n-Si(111) and n-Si(100) (KEF grade) and boron-doped p-Si(111) (KDB grade) single-crystal wafers treated in a 50% HF–70% HNO3 (1: 3, v/v) polishing solution has been studied using soft X-ray reflection spectroscopy. The fine structure of the reflection
spectra in the region of the Si L
2,3 ionization threshold has been analyzed. The dependence of the natural oxide thickness on the orientation of a silicon single
crystal surface is established. 相似文献
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