Surface Effect on Spatial Length-Scales in a Two-Gap Superconductor

The healing of two-band superconductivity near its interface is studied. It is demonstrated that the restoration of superconductivity gaps in the immediate vicinity of the interface is governed by two length scales: the first one diverges at critical temperature T _c , while the second one diverges at T _c+<T _c . By moving away from the boundary, the temperature dependencies of characteristic lengths change so that singularity at T _c+ becomes removed in the bulk by arbitrary weak interband coupling. The asymptotes for the spatial behavior of gaps have been found analytically near the surface and approaching the bulk state.     

Influence of thickness and growth temperature on the properties of zirconium oxide films grown by atomic layer deposition on silicon

ZrO₂ films of thicknesses varied in the range of 3–30 nm were atomic layer deposited from ZrI₄ and H₂O–H₂O₂ on p-Si(100) substrates. The effects of film thickness and deposition temperature on the structure and dielectric properties of ZrO₂ were investigated. At 272 and 325 °C, the growth of ZrO₂ started with the formation of the cubic polymorph and continued with the formation of the tetragonal polymorph. The ratio between the lattice parameters increased with the film thickness and growth temperature. The effective permittivity, determined from the accumulation capacitance of Hg/ZrO₂/Si capacitors, increased with the film thickness, reaching 15–17 in 25-nm-thick films. The permittivity decreased with the increasing growth temperature. The hysteresis of the capacitance–voltage curves was the narrowest for the films deposited at 325 °C, and increased towards both lower and higher deposition temperatures.     

Characterization of asymmetric rhombohedral twin in epitaxial α-Cr2O3 thin films by X-ray and electron diffraction

Epitaxial chromium oxide (α-Cr₂O₃) films grown by atomic layer deposition at 375 °C from CrO₂Cl₂ and CH₃OH on (1 1¯ 0 2) oriented α-Al₂O₃ have been studied by reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD) and X-ray reflection (XRR). The thickness of the films ranged from 10 to 310 nm, and the average growth rate was 0.1 nm per deposition cycle. According to the XRD analysis, the orientation relationship in thinner films was (1 1¯ 0 2)[1 1 0]Cr₂O₃ || (1 1¯ 0 2)[1 1 0]Al₂O₃. Confirmed by the RHEED and XRD analyses, (1¯ 1 0 2) became the preferred growth plane at the thicknesses above 40 nm. This change has been interpreted as the appearance of an asymmetric rhombohedral twin with the orientation relationship between the layers (1¯ 1 0 2)[1 1 0]top || (1 1¯ 0 2)[1 1 0]bottom and (1¯ 1 0 2)[1 1¯ 1]top || (1 1¯ 0 2)[1¯ 1 1]bottom. The match of the anion and cation sublattices of both layers was characterized in terms of the structural model of the twin interface.     

Influence of substrate temperature on atomic layer growth and properties of HfO2 thin films

Atomic layer growth of hafnium dioxide from HfCl₄ and H₂O has been studied at substrate temperatures ranging from 180–600°C. A quartz crystal microbalance was used for the real-time investigation of deposition kinetics and processes affecting the growth rate. It was shown that the layer-by-layer growth was self-limited at temperatures above 180°C. The data of ex situ measurements revealed that the structure, density and optical properties of the films depended on the growth temperature. The absorption coefficient of amorphous films grown at 225°C was below 40 mm⁻¹ in the spectral range of 260–850 nm. The refractive index of the films grown at 225°C was 2.2 and 2.0 at 260 and 580 nm, respectively. The polycrystalline films with monoclinic structure grown at 500°C had about 5% higher refractive index but more than an order of magnitude higher optical losses caused by light absorption and/or scattering.     

Supercarrier Effective Mass Isotope Effect by Interband Scattering

Supercarrier effective mass isotope effect (exponent ) is investigated using a two-band model with interband pair scattering. The corresponding repulsive interaction incorporates besides the dominating electronic (Coulomb) part an electron-phonon contribution inversely proportional to the ionic mass factor. Calculations illustrating the behaviour of T _c , its isotope exponent , and with doping in La _2–x Sr _x CuO ₄ type underdoped system reflect the observed tendencies. ² Both and diminish with doping, the sign of is opposite to . A typical estimation gives || 0.2.     

Critical and Non-Critical Coherence Lengths in a Two-Band Superconductor

We study the peculiarities of coherency in a two-gap superconductor. Both intraband couplings, inducing superconductivity in the independent bands, and interband pair-transfer interaction have been taken into account. On the basis of the Ginzburg?CLandau equations derived from the Bogoliubov?Cde Gennes equations and the relevant self-consistency conditions for a two-gap system, we find critical and non-critical coherence lengths in the spatial behaviour of the fluctuations of order parameters. The character of the temperature dependencies of these length scales is determined by the relative contributions from intra- and interband interaction channels.     

Early Stage CAD-Compliant Energy Performance Assessment Method

A simple calculator for early stage energy performance assessment in residential buildings was developed and partially validated in this study. The calculator is based on the correlation of heat loss and energy need for heating and has fixed internal heat gains as intended for compliance assessment. With the calculator, the effect of any parameter implemented can be immediately seen on delivered and primary energy. Because of simple equations, it is suitable for implementation into CAD （computer aided design） design tools including basic BIM （building information modeling） data. Results showed that the accuracy of the correlation for the cases with practical relevance was not worse than 14% of the energy need of space heating. This applies for passive house insulation level; for less insulated building envelopes, the deviations were smaller. This 14% equals to only 3 kWh/（m2.a）, i.e., the percentage difference in the total delivered and primary energy was much lower because of other components in the energy balance. The deviations determined were implemented in the calculator as safety margin. Results prove that simple energy performance assessment based on specific heat loss coefficient is well justified for early stage energy analyses as well as for compliance assessment implemented in Estonian regulation.     

Effect of preparation conditions on properties of atomic layer deposited TiO2 films in Mo–TiO2–Al stacks

TiO₂ films were grown by atomic layer deposition on Mo electrodes in order to elucidate the dominating conductance mechanism and its dependence on the growth chemistry. TiCl₄ and Ti(OC₂H₅)₄ served as titanium precursors, and H₂O or H₂O₂ as oxygen precursors. The films grown at lower temperatures were amorphous. With increasing growth temperatures the crystallization first started in the TiCl₄–H₂O process. The films grown in this process were clearly leakier compared to the films grown from Ti(OC₂H₅)₄ and H₂O and from Ti(OC₂H₅)₄ and H₂O₂. In the Ti(OC₂H₅)₄-based processes, the application of H₂O₂ instead of H₂O resulted in the films with considerably lowered conductivity, although structural differences in these films were insignificant. Space–charge-limited currents were prevailing in all our amorphous Mo–TiO₂–Al packages. Measurements at different temperatures suggested quite high trap densities likely due to the presence of impurities and structural disorder, while the strong differences in conductivity seemed to be due to different densities of gap states.     

Cost optimal and nearly zero (nZEB) energy performance calculations for residential buildings with REHVA definition for nZEB national implementation

This study determined cost optimal and nearly zero energy building (nZEB) energy performance levels following the REHVA definition and energy calculation methodology for nZEB national implementation. Cost optimal performance levels – meaning the energy performance leading to minimum life cycle cost – were calculated with net present value method according to the cost optimal draft regulation. The seven-step procedure was developed to conduct cost optimal and nZEB energy performance levels calculations in systematic and robust scientific fashion. It was shown that cost optimal primary energy use can be calculated with limited number of energy simulations as only four construction concepts were simulated and cost calculated. The procedure includes the specification of building envelope components based on specific heat loss coefficient and systems calculation with post processing of energy simulation results, without the need to use iterative approach or optimization algorithm. Model calculations were conducted for Estonian reference detached house to analyse the difference between the cost optimal and nZEB energy performance levels. Cost optimal energy performance level of Estonian reference detached house was 110 kW h/(m² a) primary energy including all energy use with domestic appliances and it was significantly lower than the current minimum requirement of 180 kW h/(m² a).     

Characterization of titanium dioxide atomic layer growth from titanium ethoxide and water

Atomic layer growth of titanium dioxide from titanium ethoxide and water was studied. Real-time quartz crystal microbalance measurements revealed that adsorption of titanium ethoxide is a self-limited process at substrate temperatures 100–250°C. A relatively small amount of precursor ligands was released during titanium ethoxide adsorption while most of them was exchanged during the following water pulse. At temperatures 100–150°C, incomplete reaction between surface intermediates and water hindered the film growth. Nevertheless, the deposition rate reached 0.06 nm per cycle at optimized precursor doses. At substrate temperatures above 250°C, the thermal decomposition of titanium ethoxide markedly influenced the growth process. The growth rate increased with the reactor temperature and titanium ethoxide pulse time but it insignificantly depended on the titanium ethoxide pressure. Therefore reproducible deposition of thin films with uniform thickness was still possible at substrate temperatures up to 350°C. The films grown at 100–150°C were amorphous while those grown at 180°C and higher substrate temperature, contained polycrystalline anatase. The refractive index of polycrystalline films reached 2.5 at the wavelength 580 nm.