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排序方式: 共有1101条查询结果,搜索用时 15 毫秒
1.
Ichiro Hirosawa Tetsuo Honma Kazuo Kato Naoto Kijima Yasuo Shimomura 《Journal of the Society for Information Display》2004,12(3):269-273
Abstract— We studied the influence of annealing in air on doped europium in BaMgAl10O17 by performing x‐ray absorption fine‐structure measurements. We determined the oxidation of doped divalent europium by annealing in air at over 500°C. The interatomic distance between the europium and the surrounding oxygen atoms was compressed by oxidation. It also appears that the oxidation process of europium is determined by the diffusion of oxygen into BaMgAl10O17. 相似文献
2.
A three‐dimensional flow simulation for epoxy casting has been developed. A control‐volume‐based finite‐element method is employed, containing a conservative upwind formulation for the advection terms and equal order interpolations for all variables. This simulation predicts the non‐isothermal and reactive flow behavior under the gravity. The viscosity and reaction‐rate parameters were estimated by using a dynamic rheometer and a differential scanning calorimeter. The predicted flow front advancement and temperature profiles in the calculation domain similar to the mold cavity were in close agreement with the corresponding experimental results. The variation of epoxy surface configuration with flow rate also showed the same tendency between the prediction and the experiment. This simulation seems to be applicable not only to the epoxy casting, but also to other molding processes of various thermoset resins. POLYM. ENG. SCI. 45:364–374, 2005. © 2005 Society of Plastics Engineers. 相似文献
3.
[110]-surface strained-SOI CMOS devices 总被引:1,自引:0,他引:1
Mizuno T. Sugiyama N. Tezuka T. Moriyama Y. Nakaharai S. Takagi S. 《Electron Devices, IEEE Transactions on》2005,52(3):367-374
We have newly developed [110]-surface strained-silicon-on-insulator (SOI) n- and p-MOSFETs on [110]-surface relaxed-SiGe-on-insulator substrates with the Ge content of 25%, fabricated by applying the Ge condensation technique to SiGe layers grown on [110]-surface SOI wafers. We have demonstrated that the electron and the hole mobility enhancement of [110]-surface strained-SOI devices amounts to 23% and 50%, respectively, against the mobilities of [110]-surface unstrained MOSFETs. As a result, the electron and the hole mobility ratios of [110]-surface strained-SOI MOSFETs to the universal mobility of (100)-surface bulk-MOSFETs increase up to 81% and 203%, respectively. Therefore, the current drive imbalance between n- and p-MOS can be reduced. Moreover, both the electron and the hole mobilities of the [110]-surface strained-SOIs strongly depend on the drain current flow direction, which is qualitatively explained by the anisotropic effective mass characteristics of the carriers on a [110]-surface Si. As a result, the [110]-surface strained-SOI technology with optimization of the current flow directions of n- and p-MOS is promising for realizing higher speed scaled CMOS. 相似文献
4.
The total syntheses of 9(Z),12(E)- and 9(E),12(Z)-octadecadienoic acids have been carried out. A useful intermediate in both
syntheses, 8-bromo-octanoic acid, recently has become available from commercial sources. This compound has been used to expedite
the preparation of these isomers. The remaining carbon atoms were derived from propargyl alcohol along with either 1-heptyne
or acetylene and 1-bromopentane. Because the overall yield for each sequence was roughly 15% and there were no extraordinary
reaction conditions in any of the synthetic steps, the compounds could be prepared readily in multiple gram quantities. The
syntheses of the two compounds were supported by data from a variety of spectroscopic techniques. 相似文献
5.
Flexural test specimens were injection-molded from six homoisotactic polypropylenes with MFI = 0.49-25.1 dg/min under cylinder temperatures of 200-320°C. Distributions in the flow direction of higher-order structures such as crystallinity Xc, thickness of skin layer, a*-axis-oriented component fraction [A*], and crystalline orientation functions and distributions in the thickness direction of higher-order structures such as Xc, β-crystal contents, [A*], and crystalline orientation functions were studied. These higher-order structures are inhomogeneous in the flow and thickness directions, which strongly influences the product properties such as mechanical and thermal properties. Molecular orientation process in injection molding was theoretically analyzed from a viewpoint of growth of recoverable shear strain at the gate and its relaxation in the cavity, which could considerably well explain the variations in the flow and thickness directions of the quantities such as thickness of the skin layer and crystalline orientation functions which express the degree of molecular orientation. 相似文献
6.
Kazutaka Chibana Chaedong Kang Masashi Okada Koji Matsumoto Tetsuo Kawagoe 《International Journal of Refrigeration》2002,25(2):83
Water-silicone oil emulsion with an additive, (C2H5O)3SiC3H6NH2, was examined as a heat storage material. A spiral tube used as a heat exchanger was immersed in a low temperature bath and the emulsion was circulated in the tube to make ice continuously. Ice was separated from the ice–liquid suspension in an outlet tank. The amount of formed ice, the temperatures of the inlet and the outlet of the heat exchanger, and the temperatures in the tube wall were measured and the overall heat transfer coefficient and the heat flux through the tube were calculated. Experiments were carried out, varying the flow rate, the temperature of cooling brine, and the thickness of tube wall. The condition under which slurry ice was formed continuously without adhesion of ice to the cooling wall was clarified. Though decrease in the thermal resistance of the tube increased the rate of ice formation or raised the brine temperature, it narrowed the range of the flow rate and of the brine temperature in which slurry ice was formed continuously. 相似文献
7.
K Tezuka M Hayashi H Ishihara K Onozaki M Nishimura N Takahashi 《Canadian Metallurgical Quarterly》1993,29(3):395-402
The N-linked oligosaccharide moieties of sycamore (Acer pseudoplatanus L.) laccase are known to be highly heterogeneous. We confirmed that this oligosaccharide heterogeneity was caused not only during the oligosaccharide biosynthesis in Golgi apparatus, but also after the excretion of laccase protein into a culture medium. The culture medium for the sycamore cells (Acer pseudoplatanus L.) contained beta-galactosidase, alpha-L-fucosidase, beta-N-acetylglucosaminidase, alpha-mannosidase and beta-xylosidase activities. We showed that the largest sugar chain in laccase, oligosaccharide F, [formula: see text] was degraded to [formula: see text] by a crude exoglycosidase mixture in the culture medium. 相似文献
8.
9.
Nobuo Masaki Tetsuo Yoshida Masaru Miyagawa Iawo Ohshima Kikuo Matsuzawa 《Electrical Engineering in Japan》1992,112(2):58-70
A second-generation model of cubicletype gas-insulated switchgear (C-GIS) with composite insulation incorporating SF6 gas has been developed. The design does not require a gas process in field assembly; it has high reliability and its installation is more rapid; and a further reduction in size is achieved. The design principles are described in detail. 相似文献
10.