VO2/GaAs异质结的制备及其光电特性研究

采用直流磁控溅射和后退火氧化工艺在p型GaAs单晶衬底上成功制备了n-VO_2/pGaAs异质结,研究了不同退火温度和退火时间对VO_2/GaAs异质结性能的影响,并分析其结晶取向、化学组分、膜层质量以及光电特性。结果表明,在退火时间2 h和退火温度693 K下能得到相变性能最佳的VO_2薄膜,相变前后电阻变化约2个数量级。VO_2/GaAs异质结在308 K、318 K和328 K温度下具有较好的整流特性,对应温度下的阈值跳变电压分别为6.9 V、6.6 V和6.2 V,该结果为基于VO_2相变特性的异质结光电器件的设计与应用提供了可行性。     

Inhibitory effects of curcumin and piperine on fluorescent advanced glycation end products formation in a bovine serum albumin–fructose model

This study investigated the inhibitory effects of curcumin and piperine on fluorescent advanced glycation end products (fAGEs) formation in a bovine serum albumin (BSA)–fructose model. Model systems of BSA and fructose were prepared, and curcumin or piperine was added. fAGEs and BSA oxidation product (dityrosine, kynurenine and N'-formylkynurenine) contents were determined. The results showed that fAGEs content decreased with increasing concentration of curcumin and piperine (P < 0.05). Addition of curcumin and piperine at 160 µg mL⁻¹ could inhibit fluorescent AGEs by 100% and 93% respectively. Dityrosine and N'-formylkynurenine contents decreased as curcumin and piperine concentration increased (P < 0.05). Furthermore, the result of principal component analysis indicated that curcumin and piperine markedly impeded BSA oxidation, resulting in a lower level of fAGEs in model systems. Therefore, adding curcumin and piperine may facilitate reduced fAGEs levels in BSA–fructose model.     

Comparison of yield and metabolites according to the types of hilling materials utilized during Glehnia littoralis sprout vegetable cultivation

Food Science and Biotechnology - Various hilling materials (rice hulls, pine sawdust, and perlite) were compared to produce sprout vegetables using beach silvertop (Glehnia littoralis Fr. Schm. ex...     

基于全U网络的混凝土路面裂缝检测算法

针对现有的混凝土裂缝检测算法在各种复杂环境中检测精度不够、鲁棒性不强的问题,根据深度学习理论和U-net模型,提出一种全U型网络的裂缝检测算法。首先,依照原U-net模型路线构建网络;然后,在每个池化层后都进行一次上采样,恢复其在池化层之前的特征图规格,并将其与池化之前的卷积层进行融合,将融合之后的特征图作为新的融合层与原U-net网络上采样之后的网络层进行融合;最后,为了验证算法的有效性,在测试集中进行实验。结果表明,所提算法的平均精确率可达到83.48%,召回率为85.08%,F1为84.11%,相较于原U-net分别提升了1.48%,4.68%和3.29%,在复杂环境中也能提取完整裂缝,保证了裂缝检测的鲁棒性。     

Transgenerational Effects of Di(2-Ethylhexyl) Phthalate on Anogenital Distance,Sperm Functions and DNA Methylation in Rat Offspring

Di(2-ethylhexyl) phthalate (DEHP) is widely used as a plasticizer in the manufacture of polyvinylchloride plastics and has been associated with concerns regarding male reproductive toxicity. In this study, we hypothesized that maternal exposure to DEHP induces transgenerational inheritance of adult-onset adverse reproductive outcomes through the male germline in the F1, F2, and F3 generations of male offspring. Pregnant rats were treated with 5 or 500 mg of DEHP/kg/day through gavage from gestation day 0 to birth. The offspring body weight, anogenital distance (AGD), anogenital index (AGI), sperm count, motility, and DNA fragmentation index (DFI) were measured for all generations. Methyl-CpG binding domain sequencing was performed to analyze sperm DNA methylation status in the F3. DEHP exposure at 500 mg/kg affected AGD, AGI, sperm count, mean DFI, and %DFI in the F1; AGD, sperm count, and mean DFI in the F2; and AGD, AGI, mean DFI, and %DFI in the F3. DEHP exposure at 5 mg/kg affected AGD, AGI, sperm count, and %DFI in the F1; sperm count in the F2; and AGD and AGI in F3. Compared with the control group, 15 and 45 differentially hypermethylated genes were identified in the groups administered 5 mg/kg and 500 mg/kg DEHP, respectively. Moreover, 130 and 6 differentially hypomethylated genes were observed in the groups administered 5 mg/kg and 500 mg/kg DEHP. Overall, these results demonstrated that prenatal exposure to DEHP caused transgenerational epigenetic effects, which may explain the observed phenotypic changes in the male reproductive system.     

Optical design of the Lyman alpha based beam emission spectroscopy(LAB)diagnostic on the HL-2A tokamak

In this article, we present the optical design of a novel diagnostic on the HL-2 A tokamak, i.e. the20-channel edge Lyman-alpha beam emission spectroscopy, which is a promising solution for edge density turbulence research on tokamaks, as it offers the possibility of density fluctuation measurement with a 3.3 mm spatial resolution while maintains a high temporal resolution of1 μs. The optical path, including the reflective collection optics, the high-dispersion spectrometer, and the linear detector array, is carefully optimized to obtain a good image quality and a high throughput. The maximum root mean square radius of the collection optics is 64 μm.The detected photon flux is estimated to be about 10~(11) photons/s/channel.     

Effect of PyC interface phase on the cyclic ablation resistance and flexural properties of two-dimensional Cf/HfC composites

Composites based on hafnium carbide and reinforced with continuous naked carbon fiber with and without PyC interface were prepared at low temperature by precursor infiltration and pyrolysis and chemical vapor deposition method. The microstructure, mechanical property, cyclic ablation and fiber bundle push-in tests of the composites were investigated. The results show that after three times ablation cycles, the bending strength of samples without PyC interface decreased by 63.6 %; the bending strength of samples with PyC interface only decreased by 37.8 %. The force displacement curve of the samples with PyC interface presented a well pseudoplastic deformation state. The mechanical behavior difference of two kinds of composites was due to crucial function of PyC interface phase including protection of fiber and weakening of fiber/matrix interface.     

Dense and core-rim structured B4C-TiB2 ceramics with Mo-Co-WC additive

B₄C-TiB₂ ceramics (TiB₂ ranging 5~70 vol%) with Mo-Co-WC as the sintering additive were prepared by spark plasma sintering. In comparison with B₄C-TiB₂ without additive, the enhanced densification was evident in the sintered specimen with Mo-Co-WC additive. Core-rim structured grain was observed around TiB₂ grains. The interface of the rim between TiB₂ and B₄C phases demonstrated different feature: the inner borderline of the rim exhibited a smooth feature, whereas a sharp curved grain boundary was observed between the rim and the B₄C grain. The formation mechanism is discussed: the epitaxial growth of (Ti,Mo,W)B₂ rim around the TiB₂ core may occur as a result of the solid solution and dissolution-precipitation between TiB₂ phase and the sintering additive. It was revealed that the fracture toughness increased as the content of TiB₂ content increased, alongside the decreased hardness. B₄C-30 vol% TiB₂ specimen demonstrated the optimal combination of mechanical properties, reaching Vickers hardness of 24.3 GPa and fracture toughness of 3.33 MPa·m^1/2.     

Optical and electrical properties of ITO film on flexible fluorphlogopite substrate

Indium Tin Oxide (ITO) films were prepared, at room temperature, on a fluorphlogopite substrate using magnetron sputtering technology. At various temperatures of 500 °C, 600 °C, 700 °C, 800 °C, and 900 °C, the samples were (had) annealed for 2 h (a 2-h duration). The results showed improvement in the crystalline performance of ITO film at selected annealing temperatures, with a significant reduction in resistivity at 800 °C. The lowest resistivity is 4.08 × 10^?4 Ω-cm, which is nearly an order of magnitude lower than the unannealed sample. All samples have an average light transmittance above 85% in the visible light range (400–800 nm), and with increasing annealing temperature, the average light transmittance tends to decrease. Besides, at the sensitive wavelength of 550 nm, the light transmittance is as high as 93.74%. The sheet resistance testing of the sample was through the number of bending times, which revealed that with the increase of the number of bending, the sheet resistance increases. However, after 1200 bending times, the change rate of the sheet resistance remains below 5%. Thus, the ITO film prepared on the flexible fluorphlogopite substrate revealed excellent optical and electrical properties, good flexibility, and improved stability after high-temperature annealing, which guarantees successful application in flexible electronic devices.