8.
Electrical properties of homoepitaxial diamond p–n
+ junction of boron (B)-doped p-type layer and phosphorus-doped n-type layer on Ib (111) diamond single crystal have been characterized. Current–voltage characteristics show a clear rectifying property with rectification ratio of over 10
5 at ± 10 V. From capacitance–voltage characteristics, it is found that a spatial distribution of space-charge density
Ni of the p–n
+ junction is not uniform and
Ni at a middle region of the space-charge layer formed at zero bias voltage is higher than that of other region of the space-charge layer. This peculiar characteristic can be explained by superposition of two effects; one is the deep dopant effect due to B atoms in the p-type layer, which makes to reduce
Ni at around the edge of the space-charge layer formed at zero bias voltage. The other is the compensation of B acceptors by impurity atoms diffusing during the p–n
+ interface and incorporating during the growth of p-type layer, which makes to reduce
Ni at the vicinity of the p–n
+ interface.
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