Intrinsic Elastic, Dielectric, and Piezoelectric Losses in Lead Zirconate Titanate Ceramics Determined by an Immittance-Fitting Method

The material coefficients of "soft" and "hard" lead zirconate titanate (PZT) ceramics were determined as complex values by the nonlinear least-squares-fitting of immittance data measured for length-extensional bar resonators. The piezoelectric d -constant should be a complex value to obtain a best fitting between observed and calculated results. Because the elastic, dielectric, and piezoelectric losses determined in this process were not "intrinsic" losses, a calculation process to evaluate the "intrinsic" losses was proposed. It was confirmed that the intrinsic losses were smaller than the corresponding extrinsic losses. The intrinsic piezoelectric loss existed in both soft and hard PZTs; ∼50% of the loss of piezoelectric d -constant was derived from the elastic and dielectric losses. The most notable difference between the soft and hard PZTs was observed in their elastic losses.     

Asymmetric Multidimensional Scaling of Brand Switching Among Margarine Brands

Behaviormetrika - Brand switching data among 12 margarine brands were analyzed by the asymmetric multidimensional scaling based on the singular value decomposition. A two-dimensional result was...     

Modified thermoelectric figure of merit estimated from enhanced mobility of [100] oriented beta-FeSi<Subscript>2</Subscript> thin film

The modification of thermoelectric figure of merit was estimated from enhanced mobility of [100] oriented beta-FeSi₂ film. beta-FeSi₂ on Si(001) substrate was prepared by molecular beam epitaxy method using an Fe source. The crystallographic orientation of beta-FeSi₂ film on Si(001) substrate was characterized by using X-ray diffraction. Using scanning electron microscopy, surface morphology and film thickness of samples were observed and estimated, respectively. The mobility of beta-FeS₂ film on Si(001) substrate were also characterized by Hall measurement at room temperature. A part of the enhancement of figure of merit was evaluated as the functions of mobility and crystallographic orientation of samples.     

Fabrication and positive temperature coefficient of resistivity properties of semiconducting ceramics based on the BaTiO3–(Bi1/2K1/2)TiO3 system

BaTiO₃–(Bi_1/2K_1/2)TiO₃ (BT–BKT) ceramics have a low ρ_RT of 10¹–10² Ω cm like that of semiconducting materials prepared by sintering in a N₂ flow with low O₂ concentration. By annealing in air, the BT–BKT ceramics show an abrupt increase in their resistivity near the T_c, namely, a positive temperature coefficient of resistivity (PTC) characteristic. With 5 mol% and 10 mol% BKT added to BT, the ceramics display the PTC characteristic at 155 °C and 165 °C, respectively. Furthermore, the ratio, ρ_max/ρ_RT, of the highest resistivity (ρ_max) and the resistivity at room temperature (ρ_RT) of the ceramics increased on adding a small amount of Mn and a sintering aid.     

Analysis of nonlinear transient responses of piezoelectric resonators

The electric transient response method is an effective technique to evaluate material constants of piezoelectric ceramics under high-power driving. In this study, we tried to incorporate nonlinear piezoelectric behaviors in the analysis of transient responses. As a base for handling the nonlinear piezoelectric responses, we proposed an assumption that the electric displacement is proportional to the strain without phase lag, which could be described by a real and constant piezoelectric e-coefficient. Piezoelectric constitutive equations including nonlinear responses were proposed to calculate transient responses of a piezoelectric resonator. The envelopes and waveforms of current and vibration velocity in transient responses observed in some piezoelectric ceramics could be fitted with the calculation including nonlinear responses. The procedure for calculation of mechanical quality factor Q(m) for piezoelectric resonators with nonlinear behaviors was also proposed.     

Size dependence of THz region dielectric properties for barium titanate fine particles

Barium titanate (BaTiO₃) crystallites with various particle sizes from 22 to 500 nm were prepared by the two-step thermal decomposition method of barium titanyl oxalate. Various characterizations revealed that these particles were impurity-free, defect-free, dense BaTiO₃ particles. The powder dielectric measurement clarified that the dielectric constant of BaTiO₃ particles with a size of around 58 nm exhibited a maximum of over 15,000. To explain this size dependence, the THz region dielectric properties of BaTiO₃ fine particles, especially Slater mode frequency, were measured using the far infrared (FIR) reflection method. As the result, the lowest Slater mode frequency was obtained at 58 nm. This tendency was completely consistent with particle size dependence of the dielectric constant.     

Enhanced Development of Azoxymethane-Induced Colonic Preneoplastic Lesions in Hypertensive Rats

Metabolic syndrome is associated with an increased risk of colorectal cancer. This study investigated the impact of hypertension, a component of metabolic syndrome, on azoxymethane (AOM)-induced colorectal carcinogenesis using SHRSP/Izm (SHRSP) non-diabetic/hypertensive rats and SHRSP.Z-Lepr^fa/IzmDmcr (SHRSP-ZF) diabetic/hypertensive rats. Male 6-week-old SHRSP, SHRSP-ZF, and control non-diabetic/normotensive Wister Kyoto/Izm (WKY) rats were given 2 weekly intraperitoneal injections of AOM (20 mg/kg body weight). Two weeks after the last injection of AOM, the SHRSP and SHRSP-ZF rats became hypertensive compared to the control WKY rats. Serum levels of angiotensin-II, the active product of the renin-angiotensin system, were elevated in both SHRSP and SHRSP-ZF rats, but only the SHRSP-ZF rats developed insulin resistance, dyslipidemia, and hyperleptinemia and exhibited an increase in adipose tissue. The development of AOM-induced colonic preneoplastic lesions and aberrant crypts foci, was significantly accelerated in both SHRSP and SHRSP-ZF hypertensive rats, compared to WKY normotensive rats. Furthermore, induction of oxidative stress and exacerbation of inflammation were observed in the colonic mucosa and systemically in SHRSP and SHRSP-ZF rats. Our findings suggest that hypertension plays a role in the early stage of colorectal carcinogenesis by inducing oxidative stress and chronic inflammation, which might be associated with activation of the renin-angiotensin system.     

Effect of bias enhanced nucleation on the nucleation density of diamond in microwave plasma CVD

The variation of diamond nucleation density as a function of the conditions of bias enhanced nucleation (BEN) were studied. The nucleation density increased with microwave power, but decreased with the substrate temperature. The nucleation density also increased with bias voltage above 60 V, and had a maximum around 100 V. The crystal growth of diamond took place when either the bias voltage was high or the deposition time was long. The shift of C_1s energy measured by X-ray photoelectron spectroscopy indicated that the ratio of carbon sp³ bonds in the amorphous carbon and/or SiC phases formed before the nucleation of diamond, increased around the bias voltage of 100 V, which seemed to be the reason for enhancement of diamond nucleation by bias voltage. A simple computer simulation was performed in order to understand the effect of BEN conditions on the nucleation of diamond. The simulation reproduced the experimentally observed changes of nucleation density and particle size.     

Applying the μBTRON bus to a music LAN

The BTRON computer architecture, developed as part of the Japanese TRON (The Real-Time Operating Nucleus) project, contains specifications for several buses. The application of one of these, the μBTRON bus, as a music local area network, is discussed. Simulation results for μBTRON bus performance when electronic musical instruments are connected to BTRON-based computers are reported. Electronic musical instruments were chosen for the simulation target because they need real-time performance, a feature of the μBTRON bus