An Adaptive Role for DNA Double-Strand Breaks in Hippocampus-Dependent Learning and Memory

DNA double-strand breaks (DSBs), classified as the most harmful type of DNA damage based on the complexity of repair, lead to apoptosis or tumorigenesis. In aging, DNA damage increases and DNA repair decreases. This is exacerbated in disease, as post-mortem tissue from patients diagnosed with mild cognitive impairment (MCI) or Alzheimer’s disease (AD) show increased DSBs. A novel role for DSBs in immediate early gene (IEG) expression, learning, and memory has been suggested. Inducing neuronal activity leads to increases in DSBs and upregulation of IEGs, while increasing DSBs and inhibiting DSB repair impairs long-term memory and alters IEG expression. Consistent with this pattern, mice carrying dominant AD mutations have increased baseline DSBs, and impaired DSB repair is observed. These data suggest an adaptive role for DSBs in the central nervous system and dysregulation of DSBs and/or repair might drive age-related cognitive decline (ACD), MCI, and AD. In this review, we discuss the adaptive role of DSBs in hippocampus-dependent learning, memory, and IEG expression. We summarize IEGs, the history of DSBs, and DSBs in synaptic plasticity, aging, and AD. DSBs likely have adaptive functions in the brain, and even subtle alterations in their formation and repair could alter IEGs, learning, and memory.     

Numerical and experimental analysis of large passivation opening for solder joint reliability improvement of micro SMD packages

In this paper, using a recently developed solder fatigue model for wafer level-chip scale package (WL-CSP), we investigated the improvement on solder joint reliability for a 8-bump micro SMD package by enlarging the passivation layer opening at the solder–die interface. The motivation to enlarge the passivation opening is to reduce the severity of the stress concentration caused by the original design, and also to increase the contact area between the solder bump and aluminum bump pad. It was confirmed in the thermal shock test that with the new design, package fatigue life improved by more than 70%. To numerically predict this improvement represents a unique challenge to the modeling. This is because in order to capture the slightest geometrical difference on the order of a few microns between the two designs, the multiple-layer solder-die interface needs to be modeled using extremely fine mesh, while the overall dimensions of the package and the test board are on the order of millimeters. To bridge this tremendous gap in geometry, a single finite element model that incorporates all necessary geometrical details is deemed computationally prohibitive and impractical. In this paper, we applied a global–local modeling scheme that was also suggested by others [1, 2 and 3]. The global model contains the complete package with much simplified solder–die interface whereas the local model includes only one solder joint, but with detailed solder–die interface. Unlike most global–local models proposed by others, we included time-independent plasticity and temperature-dependent materials in the global model. This greatly improved model correlation accuracy with only moderate increase in run time. Energy-based solder fatigue model was used to correlate the inelastic strain energy with the package fatigue life. In an earlier study [4], we have found that Darveaux’s equations tended to be conservative when applied to the micro SMD, and hence new correlations based on curve-fitting the test data were derived. In this paper, we used the newly derived equation and achieved less than 20% error in N₅₀ life for both designs, which is on par with Darveaux’s equations when used for BGAs. The analysis also revealed two factors that may account for the life improvement. First, a slight decrease in inelastic energy dissipation after enlarging the passivation opening. Second, the shift of the crack initiation location which leads to longer crack growth length for the new design. The second factor was also independently confirmed by the failure analysis.     

Titanium-Based Getter Solution for Wafer-Level MEMS Vacuum Packaging

Ultrahigh-vacuum conditions can be achieved by employing porous absorbent materials such as Ti, Zr, Ta, and Yt. Commercial getters are primarily Zr-based, since Zr possesses the best adsorption characteristics. Titanium is not considered as a candidate, since adsorption of gases by Ti is significantly reduced due to oxidation and other contamination. In the present work, it is demonstrated that the adsorption property of Ti can be substantially enhanced and benchmarked against other Zr-based commercial getters by employing a sacrificial layer such as Ni over Ti, and also by using other surface engineering techniques. It has been confirmed that, in addition to the activation temperature, the vacuum level during getter activation also plays a pivotal role in influencing the adsorption characteristics of Ti. It has been determined that the getter life could be significantly improved by the reversible adsorption characteristic of H₂ gas, facilitating regeneration cycles.     

Development of Metallic Hermetic Sealing for MEMS Packaging for Harsh Environment Applications

Hermetic sealing of microelectromechanical system sensors is indispensable to ensure their reliable operation and also to provide protection during fabrication. This work proposes two prospective candidates for hermetic sealing for rugged environment applications, i.e., Al-Ge and Pt-In. Al-Ge was chosen due to its compatibility with complementary metal–oxide–semiconductor technology. Pt-In possesses the highest remelting temperature among all the solder systems, which is desired for high-temperature applications in both the energy and aerospace industries. The various bonding parameters for Al-Ge eutectic bonding and Pt-In transient liquid-phase (TLP) bonding have been optimized, and their influence on the bond quality is reported. Optimization of bonding parameters has been carried out with the objective of ensuring void-free bonds. A new configuration for stacking Al-Ge thin films has been demonstrated to tackle the issue of loss of Ge prior to bonding, since native Ge oxides are soluble in deionized water. The impact of solid-state aging prior to Al-Ge eutectic bonding has been investigated. The method of tailoring the phases in the Pt-In joint is also discussed. The prospects and constraints of eutectic and TLP bonding from the hermeticity perspective are discussed in detail. Furthermore, changes in the microstructure under aging at 300°C up to 500 h and the resulting influence on the mechanical properties are presented. The overall finding of this work is that Al-Ge can achieve better mechanical and hermetic performance for high-temperature applications.     

Cyanate Ester-Based Encapsulation Material for High-Temperature Applications

Cyanate ester resin-based composite materials have been proposed as potential encapsulants for high-temperature applications. The objective of this study is to develop a cyanate ester-based encapsulant, which can also serve as a flip-chip underfill as well as for traditional encapsulation. Two different materials, quartz and alumina fillers, have been studied. The impact of shapes and sizes of the fillers on the overall thermomechanical properties has been investigated. The adhesion strengths of the materials to the ceramic substrate, Kovar lid, and silicon die have also been characterized. The modulus of the resin and the shape of the fillers play a pivotal role in minimizing thermal stress, generated by coefficient of thermal expansion mismatches. Smaller filler particles were found to have better adhesion to the cyanate ester resin. The high-temperature performance of the cyanate ester-based encapsulants was evaluated by thermal aging at 300°C for up to 500 h.     

Investigation of Gold Nanoparticle Inks for Low-Temperature Lead-Free Packaging Technology

Gold nanoparticle inks were investigated as a potential candidate for lead-free packaging applications. Inks consisted of surfactant-passivated nanoparticles dissolved in a solvent. Optimized gold inks are able to sinter at temperatures as low as 120°C and achieve conductivities of up to 70% of bulk. Once sintered, the metallic structure reverts to bulk-like properties and approaches bulk reliability and performance. Thus nanoparticle-based solders would operate at much lower homologous temperatures as compared with alloy-based solders. Nanoparticle inks under investigation were sintered at 180°C. The resulting material exhibited a resistivity of 5 μΩ cm, which is significantly lower than those of Pb-Sn and Sn-Ag-Cu. Electromigration studies were carried out and time to failure was investigated as a function of temperature. Electromigration activation energy was calculated through Black’s equation to be 0.52 eV, which is consistent with surface/grain boundary diffusion. These studies suggest that nanoparticle-ink-based films show excellent robustness, due to their irreversible conversion to bulk-like materials. Nanoparticle inks are thus promising candidates for next-generation lead-free solders.     

Reliability of Au-Ge and Au-Si Eutectic Solder Alloys for High-Temperature Electronics

High-temperature electronics will facilitate deeper drilling, accessing harder-to-reach fossil fuels in oil and gas industry. A key requirement is reliability under harsh conditions for a minimum continuous operating time of 500?h at 300°C. Eutectic solder alloys are generally favored due to their excellent fatigue resistance. Performance of Au-Ge and Au-Si eutectic solder alloys at 300°C up to 500?h has been evaluated. Nanoindentation results confirm the loss of strength of Au-Ge and Au-Si eutectic solder alloys during thermal aging at 300°C, as a result of grain coarsening. However, the pace at which the Au-Ge eutectic alloy loses its strength is much slower when compared with Au-Si eutectic alloy. The interfacial reactions between these eutectic solder alloys and the underbump metallization (UBM), i.e., electroless nickel immersion gold (ENIG) UBM and Cu/Au UBM, have been extensively studied. Spalling of Au₃Cu intermetallic compound is observed at the interface between Au-Ge eutectic solder and the Cu/Au UBM, when aged at 300°C for 500?h, while the consumption of ENIG UBM is nominal. Unlike the Au-Si solder joint, hot ball shear testing at high temperature confirmed that the Au-Ge joint on ENIG UBM, when aged at 300°C for 500?h, could still comply with the minimum qualifying bump shear strength based on the UBM dimension used in this work. Thus, it has been determined that, among these two binary eutectic alloys, Au-Ge eutectic alloy could fulfill the minimum requirement specified by the oil and gas exploration industry.     

Channel capacity with suboptimal adaptation technique over generalized-K fading using marginal moment generating function

In this paper we have computed the channel capacity for suboptimal adaptation technique over the generalized-K fading environment. The analytical expression for channel capacity in case of the truncated channel inversion with fixed rate (C_TCIFR) has been exploited in terms of marginal moment generating function (MMGF) and its performance is evaluated over the generalized-K faded environment. The MMGF based approach for the computation of channel capacity has been validated with the reported literature for channel capacity in case of the channel inversion with fixed rate using the suboptimal adaptive technique.