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Epitaxial lateral overgrowth (ELOG) technology is demonstrated as a viable technology to realize monolithic integration of III-Vs on silicon. As an alternative to wafer-to-wafer bonding and die-to-wafer bonding, ELOG provides an attractive platform for fabricating discrete and integrated components in high volume at low cost. A possible route for monolithic integration of III–Vs on silicon for silicon photonics is exemplified by the case of a monolithic evanescently coupled silicon laser (MECSL) by combining InP on Si/SiO2 through ELOG. Passive waveguide in MECSL also acts as the defect filtering mask in ELOG. The structural design of a monolithic evanescently coupled silicon laser (MECSL) and its thermal resistivity are established through simulations. Material studies to realize the above laser through ELOG are undertaken by studying appropriate ELOG pattern designs to achieve InP on narrow regions of silicon. We show that defect-free InP can be obtained on SiO2 as the first step which paves the way for realizing active photonic devices on Si/SiO2 waveguides, e.g. an MECSL.  相似文献   
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For the purpose of functionalizing III‐V semiconductor nanowires using n‐doping, Sn‐doped GaAs zincblende nanowires are produced, using the growth method of Aerotaxy. The growth conditions used are such that Ga droplets, formed on the nanowire surface, increase in number and concentrations when the Sn‐precursor concentration is increased. Droplet‐covered wires grown with varying Sn concentrations are analyzed by transmission electron microscopy and electron tomography, which together establish the positioning of the droplets to be preferentially on {?111}B facets. These facets have the same polarity as the main wire growth direction, [?1?1?1]B. This means that the generated Ga particles can form nucleation sites for possible nanowire branch growth. The concept of azimuthal mapping is introduced as a useful tool for nanowire surface visualization and evaluation. It is demonstrated here that electron tomography is useful in revealing both the surface and internal morphologies of the nanowires, opening up for applications in the analysis of more structurally complicated systems like radially asymmetrical nanowires. The analysis also gives a further understanding of the limits of the dopants which can be used for Aerotaxy nanowires.  相似文献   
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Neutron imaging is a promising technique to study drying processes in food engineering as it is a non-intrusive, non-destructive technique, which provides quasi-real-time quantitative information of the water loss during drying and of the internal water distribution, at a high spatial and dynamic resolution. Particularly, the high sensitivity to water is its main advantage for drying studies, despite the limited accessibility to reactor facilities, which produce neutrons. This technique was used to investigate forced convective drying of fruit tissue (pear and apple), placed in a small wind tunnel. Water loss, water distribution in the sample and sample shrinkage were evaluated as a function of time. The water loss, determined quantitatively from neutron radiographs, was underestimated slightly compared to gravimetrical measurements. The overall drying behaviour agreed well with control measurements performed in a climatic chamber and was very similar for both fruit tissues. The corresponding shrinkage behaviour of both tissues was also similar. The large shrinkage, which is characteristic for soft biological materials such as food products, however, hindered post-processing to some extent. From the internal water distribution, the water gradients within the sample, induced by drying, were visualised and were found to predominantly occur at the air–material interface, indicating that the water transport inside the tissue dominated the water loss, instead of the convective exchange with the air flow. Neutron imaging was shown to exhibit unique benefits for studying drying processes of food.  相似文献   
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