The coupling-of-modes approach to the analysis of STW devices. II

For pt. I see ibid., vol. 44, no. 3, p. 652-7 (1997). The method for analyzing surface transverse wave (STW) devices by using a coupling-of-modes (COM) formalism has been completed, covering the STW electromechanical coupling coefficient (ECC). An ECC analytical formula has been derived by fitting numerical results from STW effective permittivity analysis. The ECC exhibits frequency and mass-loading variation. Using this new result, a satisfactory agreement with available experimental frequency characteristics of STW two-port quartz resonators has been achieved, without the necessity of additional experimental information. In its present form, the method is self-consistent and applicable to arbitrary STW layouts.     

SAW COM-parameter extraction in AlN/diamond layered structures

Highly c-axis oriented aluminum nitride (AlN) thin piezoelectric films have been grown on polycrystalline diamond substrates by pulsed direct current (DC) magnetron reactive sputter-deposition. The films were deposited at a substrate temperature below 50/spl deg/C (room temperature) and had a typical full width half maximum (FWHM) value of the rocking curve of the AlN-002-peak of 2.1 degrees. A variety of one-port surface acoustic wave (SAW) resonators have been designed and fabricated on top of the AlN films. The measurements indicate that various SAW modes are excited. The SAW phase velocities of up to 11.800 m/s have been measured. These results are in agreement with calculated dispersion curves of the AlN/diamond structure. Finally, the coupling of modes parameters have been extracted from S/sub 11/ measurements using curve fitting for the first SAW mode, which indicate an effective coupling K/sup 2/ of 0.91% and a Q factor of about 600 at a frequency of 1050 MHz.     

Aluminum scandium nitride thin-film bulk acoustic resonators for wide band applications

Piezoelectric c-textured Al_(1−x)Sc_xN thin films, where the Sc relative concentration, x, varies in the range 0-0.15 have been studied in view of radio frequency (RF) electro-acoustic applications. Thin film bulk acoustic wave resonators (FBARs) employing these films were fabricated and characterized as a function of the Sc concentration for the first time. The measured electromechanical coupling is found to increase by as much as 100% in the above concentration range. The results from this work underline the potential of the c-textured Al_(1−x)Sc_xN based FBARs for wide band RF applications.     

Micromachined thin film plate acoustic resonators utilizing the lowest order symmetric lamb wave mode

Thin film integrated circuits compatible resonant structures using the lowest order symmetric Lamb wave propagating in thin aluminum nitride (AlN) film membranes have been studied. The 2-mum thick, highly c-oriented AlN piezoelectric films have been grown on silicon by pulsed, direct-current magnetron reactive sputter deposition. The films were deposited at room temperature and had typical full-width, half-maximum value of the rocking curve of about 2 degrees. Thin film plate acoustic resonators were designed and micromachined using low resolution photolithography and deep silicon etching. Plate waves, having a 12-mum wavelength, were excited by means of both interdigital (IDT) and longitudinal wave transducers using lateral field excitation (LW-LFE), and reflected by periodical aluminum-strip gratings deposited on top of the membrane. The existence of a frequency stopband and strong grating reflectivity have been theoretically predicted and experimentally observed. One-port resonator designs having varying cavity lengths and transducer topology were fabricated and characterized. A quality factor exceeding 3000 has been demonstrated at frequencies of about 885 MHz. The IDT based film plate acoustic resonators (FPAR) technology proved to be preferable when lower costs and higher Qs are pursued. The LW-LFE-based FPAR technology offers higher excitation efficiency at costs comparable to that of the thin film bulk acoustic wave resonator (FBAR) technology     

CMOS design of the tree arbiter element

An asynchronous arbiter dynamically allocates a resource in response to requests from processes. Glitch-free operation when two requests arrive concurrently is possible in MOS technologies. Multiway arbitration using a request-grant-release-acknowledge protocol can be achieved by connecting together two-way arbiters (mutual exclusion and tree arbiter elements). We have devised a fast and compact design for the tree arbiter element which offers eager forward-propagation of requests. It compares favorably with a well-known design in which request propagation must wait for arbitration to complete. Our analysis and simulations also suggest that no performance improvement will be obtained by incorporating eager acknowledgment of releases. All of the designs considered in this paper are speed-independent, a formal property of a network of elements which can be taken as a positive indication of their robustness     

Theoretical and experimental mass-sensitivity analysis of polymer-coated SAW and STW resonators for gas sensing applications

Polymer-coated surface transverse waves (STW) resonators have recently been successfully studied for organic gas sensing applications. The first results indicate increased absolute and even relative sensitivity as compared to similar resonators with surface acoustic waves (SAW). However, the gain in sensitivity is accompanied by the adverse effect of an increased attenuation and the advantage frame is difficult to establish quantitatively. In this paper, a new set of experimental samples with Parylene C-coated quartz substrates are studied. The samples are matched in frequency and wavelength. The results are compared and the obtained features explained using available theoretical algorithms for analyzing layered SAW and Love configurations, and a recently developed STW algorithm. The approximate limits of advantageous applicability of the STW resonator gas sensors are discussed.     

Surface transverse waves: properties, devices, and analysis

Surface transverse waves represent a new generation of the surface acoustic wave (SAW) family that offers advantageous properties without further demand for new materials or improved design and technology. The most effective activity in the surface transverse wave (STW) area has been realized during the last decade with high-performance devices achieved and analytical methods developed. The present paper reviews the basic achievements in historical and factual order. A state-of-the-art introduction is combined with discussion on the development tendencies with specific emphasis on sensor technology.     

Coupling-of-modes analysis of STW resonators including loss mechanism

Surface transverse wave (STW) resonators exhibit substantial advantages over conventional surface acoustic wave (SAW) resonators. However, their analysis is more involved because of the complicated nature of STW. Many parameters have been studied, but the one that has been difficult to analyze accurately is the quality factor Q, which is of great importance for characterizing the devices. At present, none of the available analytical models is concerned with quantitative loss consideration, and the establishment of reliable design rules is difficult. We present a theoretical study that allows one to conduct coupling-of-modes (COM) STW loss analysis and estimate the resonator Q from material and layout parameters. The COM transmission coefficient χ₁₁ is derived by Floquet analysis. Its imaginary part is obtained by numerically fitting available experimental data for the Q-factor of particular resonators. It is a measure of STW propagation loss that adds to the electrode reflection loss     

Recent developments in thin film electro-acoustic technology for biosensor applications

The article reviews recent developments of the thin film electro-acoustic (TEA) technology in view of the design and fabrication of micro-acoustic transducers for biosensor applications. The use of the TEA technology leads to transducer miniaturisation, compatibility with the IC technology, possibility for multiplexing, decrease in fabrication cost, reduction of consumables, mass fabrication, etc. Focus lies on the design, fabrication and evaluation of the transducer performance in liquid media as judged by electro-acoustic behaviour and ultimately by mass and viscosity resolution. The analysis draws the conclusion that the thickness excited quasi-shear thin film bulk acoustic resonator technology is far ahead in its development with regard to other alternative approaches in terms of both performance and level of maturity. Consequently, the main aspects of the quasi-shear thin film bulk acoustic resonator (FBAR) technology from film synthesis and fabrication through to performance evaluation and demonstration are reviewed in detail.