Color registration error reduction method compensating the influence of belt thickness variation in electrophotographic process

This paper proposes a new belt drive control method for reducing a belt velocity-fluctuation that is caused by a belt thickness-variation in the circumferential direction. A belt driving system performs feedback control with a rotary encoder-output mounted on a driven roller. This proposed method correct the reference value of the feedback control for the purpose of the belt velocity regulation. The correction includes two steps. The first step acquires the encoder-output of the driven roller and calculates the rotational angular velocity-fluctuation with one cycle of the belt rotation. The second step converts from the velocity-fluctuation to the correction value of the feedback reference. The correction value cancels a detection error of the driven roller caused by the belt thickness-variation. After these steps, the belt driving system controls the belt velocity as compensating the belt velocity-fluctuation. Experimental result showed the significant fluctuation reduction on a typical tandem-engine printer.     

Schottky barrier heights of contact metals to p-type ZnSe

Schottky barrier heights (SBHs) of a variety of metals (In, Cd, Nb, Ti, W, Cu, Ag, Au, Ni, Pt, and Se) contacting to p-ZnSe grown by a molecular beam epitaxy method were determined by analyzing capacitance-voltage (C-V) and/or current density-voltage (J-V) curves. The SBH values of the Au and Ni contacts were determined from intersections of straight lines of the C⁻²-V curves to be 1.23 and 1.13 eV, respectively. The J-V calculations provided a large SBH value of 1.2 ± 0.1 eV for a variety of metals, indicating that the Fermi-level could be pinned at the contact interface. Reduction of the SBH values to a level lower than 0.4 eV and/or increase of doping concentrations to a level higher than 10²⁰ cm⁻³ are essential to obtain an ohmic contact with contact resistivity of around 10⁻³ Ω·cm².     

Fabrication of damascene Cu wirings using solid acidic catalyst

The copper damascene process is one of the most promising technologies for fabricating Cu wirings for electronic devices such as LSIs. In this research, the fabrication of damascene Cu wirings was conducted using solid acidic catalyst. When a Cu-plated wafer, whose oxide is a basic oxide is dipped into a mixture of oxidizing solution and acidic solution, surface atoms are ionized and etched off into the solution. However, because conventional nonelectrolytic etching does not have a reference surface, it is difficult to utilize for planarization. Therefore, a new nonelectrolytic machining method using a cation-exchange fabric instead of an acidic solution was developed. To be more precise, the planarization of a Cu-plated wafer was carried out by rubbing with the cation-exchange fabric in ozone water. Basically, this method exploits chemical reactions so that the physical properties of the workpiece surface are not deteriorated. Furthermore, this method uses no chemicals except for ozone water, which easily dissociates into water and oxygen molecules; thus, this method is a low-cost, environmentally friendly process. In this paper, as a preliminary experiment, the nonelectrolytic etching of a Cu sample using solutions of O₃ and CO₂ was carried out to inspect the dependence of the etching rate on [O₃] and [H⁺]. The results indicate that the etching rate increased as [O₃] and [H⁺] increased. When [H⁺] was high relative to [O₃], a smooth etch-pit-free surface was achieved. Next, nonelectrolytic etching using a cation-exchange fabric was carried out, and properties similar to those in the case of etching using solutions were obtained. Finally, damascene Cu wirings were fabricated using ozone water and a cation-exchange catalyst.     

The effects of 18 alpha,beta-glycyrrhetinic acid on the hormonal induction of tyrosine aminotransferase in rat primary cultured hepatocytes

Complementary medicine (CM) is popular with patients but physicians do not feel at ease with this situation and some fear that the patient might be the loser. Their fear is based on the perception that some CM practitioners have dubious qualifications and competence and that too little is known about the efficacy and safety of many complementary therapies. It follows that, in the interest of the patient and all other parties involved, we urgently need more and better research to fill the void. Integration of complementary medicine into mainstream care requires a minimum of essential evidence. As in all areas of medicine, there can be no short cut to rigorous research.     

Electrical properties at p-ZnSe/metal interfaces

In order to prepare low resistance ohmic contacts to p-ZnSn by the “deposition and annealing (DA)” technique which has been extensively used for GaAs and Si-based devices, formation of a heavily doped layer by the p-ZnSe/metal reaction is required. For p-ZnSe/Ni contacts, Ni and Se reacted preferentially at the ZnSe/Ni interface upon annealing at temperatures higher than 250°C. However, capacitance-voltage measurements showed that the net acceptor concentration (N_A-N_D) close to the p-ZnSe/Ni interface was reduced upon the Ni/ZnSe reaction, resulting in high contact resistance. For p-ZnSe/Au contacts, neither Au/ZnSe reaction nor reduction of the acceptor concentration were observed after annealing at temperatures lower than 300°C. This indicates that although the metal/p-ZnSe reaction is mandatory to prepare a heavily doped layer, the reaction induced an increase in the compensation donors in the p-ZnSe substrate. In order to increase the acceptor concentration in the vicinity of the p-ZnSe/metal interface through diffusion from the contact materials, Li or O which was reported to play the role of an acceptor in ZnSe was deposited with a contact metal and annealed at elevated temperatures. Ni or Ag was selected as the contact metal, because these metals were expected to enhance Li or O doping by reacting with ZnSe. However, the current density-voltage characteristics of the Li(N)/Ni and Ag(O) contacts exhibited rectifying behavior, and the contact resistances increased with increasing annealing temperature. The present results indicated that, even though the acceptor concentration in the p-ZnSe substrate increased by diffusion of the dopants from the contact elements, an increment of the compensation donors was larger than that of the acceptors. The present experiments indicated that preparation of low resistance ohmic contacts by forming a heavily doped intermediate layer between p-ZnSe and metal is extremely difficult by the DA technique.     

Living cationic polymerization of vinyl monomers by organoaluminum halides

Summary Well-defined living polymers of isobutyl vinyl ether were obtained in the polymerization initiated with ethylaluminum dichloride (EtAlCl₂) in conjunction with a stoichiometric excess of dioxane (5–10 vol%) in n-hexane at 0°C. Under these conditions, the number-average molecular weight of the polymers increased in direct proportion to monomer conversion, while the molecular weight distribution stayed narrow (M_w/M_n = 1.1–1.25). In sharp contrast, the EtAlCl₂-initiated polymerization in the absence of dioxane led to non-living polymers with a broad molecular weight distribution. It was concluded that the propagating carbocation is stabilized not by the counteranion but by an externally added basic compound (dioxane) that strongly interacts with the active end.     

On-chip Diamond MEMS Magnetic Sensing through Multifunctionalized Magnetostrictive Thin Film

Electrically integrable, high-sensitivity, and high-reliability magnetic sensors are not yet realized at high temperatures (500 °C). In this study, an integrated on-chip single-crystal diamond (SCD) micro-electromechanical system (MEMS) magnetic transducer is demonstrated by coupling SCD with a large magnetostrictive FeGa film. The FeGa film is multifunctionalized to actuate the resonator, self-sense the external magnetic field, and electrically readout the resonance signal. The on-chip SCD MEMS transducer shows a high sensitivity of 3.2 Hz mT⁻¹ from room temperature to 500 °C and a low noise level of 9.45 nT Hz^−1/2 up to 300 °C. The minimum fluctuation of the resonance frequency is 1.9 × 10⁻⁶ at room temperature and 2.3 × 10⁻⁶ at 300 °C. An SCD MEMS resonator array with parallel electric readout is subsequently achieved, thus providing a basis for the development of magnetic image sensors. The present study facilitates the development of highly integrated on-chip MEMS resonator transducers with high performance and high thermal stability.     

Buoyancy engine developed for underwater gliders

A buoyancy engine with a swashplate-type axial piston pump was developed. Its oil extrusion and drawing properties under high hydraulic pressure were evaluated. This buoyancy engine is now installed in an underwater glider that will achieve long-term monitoring of ocean environments up to 2100 m depth in a designated area with lower operational costs. This bidirectionally functioning pump can control the amount of oil in extrusion and draw operations. When drawing oil under high pressure, the hydraulic pump and the electric motor, respectively, act as a hydraulic motor and an electric generator. The generated electric power is absorbed by a damping resistor. The oil-drawing and extrusion properties were measured using a large hyperbaric chamber that is able to produce an almost identical environment to that of actual operations. Results confirmed stable oil extrusion operations up to 21 MPa. Regarding oil-drawing properties, although it was measured only up to 10 MPa in the hyperbaric chamber, it can be inferred that the system can draw the oil and can control the buoyancy precisely up to 21 MPa by replacing the two-way ball valve with an electromagnetic latching solenoid valve.     

Size effect in the low-field Hall coefficient of single-crystal copper films

Measurements of the low-field Hall coefficientR _H of single-crystal copper films were made at 4.2 K by the use of a SQUID. The surface normaln of the samples was directed in the [100], [110], and [111] directions and the ratio of the thickness to the mean free path ranged from 0.1 to 0.7. It is found that the effect of surface scattering causesR _H to decrease whenn [100], whereas it causesR _H to increase whenn [110] and [111]. This behavior is interpreted in terms of the geometrical characteristics of the Fermi surface.