There is no good method to measure the shape and the strain distributions of a structure changing with time. We have previously proposed the Fourier transform grid method (FTGM) to measure the three-dimensional shape and surface strain distributions of stationary objects by analysing the two-dimensional grating images recorded with two cameras. In the stereoscopic method, it is very important to determine the accurate geometric parameters of the camera system. In this paper, the positions and the directions of cameras are accurately determined using the FTGM applied to images of a reference object on which a two-dimensional grating is drawn. Applications for analysing shape and strain distributions of vibrating rubber plates and a moving human skin are shown. 相似文献
We investigated the phase coherence length, lφ, in large Si-MOSFET's fabricated using current process technology, with a particular emphasis on highly doped silicon substrates, and then studied the effects of quantum conductance fluctuations in deep sub-μm MOSFET's, with channel length comparable to lφ. We identified, in a 0.2 μm MOSFET, universal conductance fluctuations in the strong inversion regime and conductance fluctuations due to variable range hopping in the weak inversion regime. The drain bias dependence of these fluctuations indicates clearly that they become a serious concern only at drain voltages lower than 10 mV. Therefore, even if the wave nature of electrons results in quantum conductance fluctuations, it will not lead to a limitation on device miniaturization in future Si-ULSI's 相似文献
Under cryogenic operation, a low Vth realizes a high speed performance at a greatly reduced power-supply voltage, which is the most attractive feature of Cryo-CMOS. It is very important in sub-0.25 μm Cryo-CMOS devices to reconcile the miniaturization and the low Vth. Double implanted MOSFET's technology was employed to achieve the low Vth while maintaining the short channel effects immunity. We have investigated both the DC characteristics and the speed performance of 0.25 μm gate length CMOS devices for cryogenic operation. The measured transconductances in the saturation region were 600 mS/mm for 0.2 μm gate length n-MOSFET's and 310 mS/mm for 0.25 μm gate length p-MOSFET's at 80 K. The propagation delay time in the fastest CMOS ring oscillator was 22.8 ps at Vdd=1 V at 80 K. The high speed performance at extremely low power-supply voltages has been experimentally demonstrated. The speed analysis suggests that the sub-l0 ps switching of Cryo-CMOS devices will be realized by reducing the parasitic capacitances and through further miniaturization down to 0.1 μm gate length or below 相似文献
The concept of granular computing is applied to Aristotle's categorical syllogism. Such kind of reasoning is called granular reasoning in this paper. For the purpose, two operations called zooming in & out are introduced to reconstruct granules of possible worlds. 相似文献
Low-cycle fatigue (LCF) tests on as-cast Sn-3.5Ag, Sn-3Ag-0.5Cu, Sn-3Ag-0.5Cu-1Bi, and Sn-3Ag-0.5Cu-3Bi solders was carried
out using a noncontact strain-controlled system at 20°C with a constant frequency of 0.1 Hz. The addition of Cu does not significantly
affect the fatigue life of eutectic Sn-Ag solder. However, the fatigue life was significantly reduced with the addition of
Bi. The LCF behavior of all solders followed the Coffin-Manson relationship. The fatigue life of the present solders is dominated
by the fracture ductility and can be described by the ductility-modified Coffin-Manson’s relationship. Steps at the boundaries
of dendrite phases were the initiation sites for microcracks for Sn-3.5Ag, Sn-3Ag-0.5Cu, and Sn-3Ag-0.5Cu-1Bi solders, while
for Sn-3Ag-0.5Cu-3Bi solder, cracks initiated along both the dendrite boundaries and subgrain boundaries in the dendrite phases.
The linking of these cracks and the propagation of cracks inside the specimen occurred both transgranularly through eutectic
phases and intergranularly along dendrite boundaries or subgrain boundaries. 相似文献
This paper reports on a study of the inversion-layer mobility in n-channel Si MOSFETs fabricated on a silicon-on-insulator (SOI) substrate. In order to make clear the influences of the buried-oxide interface on the inversion-layer mobility in ultra-thin film SOI transistors, SOI wafers of different quality at the buried-oxide interface were prepared, and the mobility behaviors were compared quantitatively. The transistors with a relatively thick SOI film exhibited the universal relationship between the effective mobility and the effective normal field, regardless of the buried-oxide interface quality. It was found, however, that Coulomb scattering due to charged centers at the backside interface between SOI films and buried oxides has great influence on the effective mobility in the thin SOI thickness region, depending on the buried-oxide interface quality. This means that Coulomb scattering due to charged centers at the buried-oxide interface can degrade the mobility with decreasing SOI thickness, unless the SOI wafer quality at the buried-oxide interface is controlled carefully 相似文献
Laser sintering of alkoxy-derived ultrafine BaTiO3 powders was investigated. The temperature increases of the sample with laser irradiation were measured with a thermocouple. It was found that laser irradiation could generate enough heat to sinter ceramics. A slurry was prepared by mixing an alkoxy-derived BaTiO3 powder, binder additives, solvent, and plasticizer. The slurry was tape cast and dried to give a green sheet. The green sheet was laser sintered and was then characterized by SEM, XRD, and density measurements. The effect of burnout before laser irradiation and the characteristic microstructure of laser-sintered BaTiO3 are described. 相似文献
Copoly(amide-ethers) containing two types of tertiary amine units were made as antistatic modifiers for poly(ethylene terephthalate) (PET) fibers. The filaments of the copolymers were melt-spun and reacted with three alkylating agents in order to quaternize the tertiary amine into a sulfo-betaine, a carbobetaine, and an ammonium ion. The apparent electric resistivity of the filaments was greatly reduced by this reaction, being in the range of 106 to 108 Ω/cm. However, because these quaternized copolymers incurred decomposition during blend spinning with PET, a blend PET fiber containing one type of copoly(amide-ether) was melt-spun and subjected to quaternization of the amino groups as well as to surface crosslinking with various alkylating and epoxy agents. The quaternized blend fibers obtained showed improved antistatic properties compared with the original blend fiber. Particularly, the fibers crosslinked with epoxy compounds were found to have the best antistatic properties that had ever been attained with this type of modification. The antistatic properties were retained even after dyeing, because both hydrophilic and ionic groups had been effectively immobilized on the surface. Since this quaternization and crosslinking could be conducted on-line with spinning and drawing within a short reaction time, this modification technique is called “spin-finishing method”, which should be superior to the conventional methods in terms of cost performance and productivity. 相似文献
Summary: Polyacrylonitrile (PAN) particles with micro‐size ranges (0.15–2 μm) were prepared by emulsion and dispersion polymerizationa and in supercritical carbon dioxide media. The PAN particles were blended with Nylon 6 (PA6) at 220 °C by using a miniature mixer; it was found that melt‐mixing was possible for PAN‐rich compositions as high as 70 wt.‐%. Blends were characterized by scanning electron microscopy, IR, viscosity measurements, differential scanning calorimetry, and dynamic mechanical thermal analysis (DMTA). The size and shape of original PAN particles were retained in PAN/PA6 blends. The useful range to blend PAN particles size was less than 1 μm in terms of shape retention of the PAN particles in blends. Blends with 40 wt.‐% PAN content were found to be melt‐processable. The elastic modulus was higher for PAN/PA6 blends than pure PA6.
SEM photograph of PAN‐SC/PA6 blend with a 40/60 weight ratio. 相似文献
Physical and gas transport properties of the hyperbranched polyimide prepared from a triamine, 1,3,5-tris(4-aminophenoxy)benzene (TAPOB), and a dianhydride, 4,4′-(hexafluoroisopropylidene) diphthalic anhydride (6FDA), were investigated and compared with those of linear-type polyimides with similar chemical structures prepared from diamines, 1,4-bis(4-aminophenoxy)benzene (TPEQ) or 1,3-bis(4-aminophenoxy)benzene (TPER), and 6FDA. 6FDA-TAPOB hyperbranched polyimide exhibited a good thermal stability as well as linear-type analogues. Fractional free volume (FFV) value of 6FDA-TAPOB was higher than those of the linear-type analogues, indicating looser packing of molecular chains attributed to the characteristic hyperbranched structure. It was found that increased resistance to the segmental mobility decreases the gas diffusivity of 6FDA-TAPOB, in spite of the higher FFV value. However, 6FDA-TAPOB exhibited considerably high gas solubility, resulting in high gas permeability. It was suggested that low segmental mobility and unique size and distribution of free volume holes arising from the characteristic hyperbranched structure of 6FDA-TAPOB provide effective O2/N2 selectivity. It is concluded that the 6FDA-TAPOB hyperbranched polyimide has relatively high permeability and O2/N2 selectivity, and is expected to apply to a high-performance gas separation membrane. 相似文献