OTDM transmitter using WDM-TDM conversion with an electroabsorptionwavelength converter

An all-optical multiplexing technique using wavelength division multiplexing (WDM)-time division multiplexing (TDM) conversion with an electroabsorption wavelength converter has been proposed and demonstrated. The effectiveness of this WDM-TDM conversion technique for various pulsewidth settings was experimentally investigated. The fluctuation of the signal performance, which was inevitably caused by the coherent crosstalk between adjacent pulses in the conventional optical time division multiplexing (OTDM) technique, were successfully suppressed, even in the case of wide pulse duration. High Q-factor performance has been maintained for a wide range of duty ration from 36% to 74%. By introducing this technique to the optical time division multiplexer, a highly stable and high-quality 40-Gb/s optical signal can be effectively produced without generating the short pulse or setting two tributaries at orthogonal polarization states, and without introducing high-speed electronics for signal multiplexing. The WDM-TDM conversion with an electroabsorption wavelength converter was extended to 60-Gb/s operation by using three 20-Gb/s tributaries. A clear eye opening was confirmed for a waveform after the WDM-TDM conversion of the 60-Gb/s signal     

Preparation of polyimide-epoxy composites

The formation of a three dimensional network of crosslinked epoxy leads all unmodified epoxies to have inherent brittleness and relatively low degradation temperatures. Polyimides, on the other hand, are widely used for applications that require high degrees of flexibility and thermal resistance. Here, we have focused on the preparation of epoxy systems cured with polyamic acids instead of traditional amino-group-containing hardening agents. The cure behavior and potential reaction mechanisms of EPON 828 resin and polyamic acid mixtures were evaluated by DSC and TGA. Thermal analysis showed a complex reaction sequence taking place in the mixture and also determined the extent of reaction of the polyamic acid with itself and the competitive reaction of the polyamic acid with the epoxy. The compositions of the mixtures were varied to see the dependence of the cure behavior on component concentrations. Solutions of the two components did not phase separate and also phase separation was not apparent either optically or microscopically in the cured samples. This phase behavior was attributed to a unique in situ reaction. A novel solvent system for the polyamic acid precursor was also used.     

A high resolution negative working resist,LMR-UV,for g- and i-line lithography

LMR-UV (“low molecular weight resist for uv lithography”), a naphthoquinone-diazide sulfonic acid ester of a novolak resin, is a negative working resist. The mechanism of insolubilization of LMR-UV is based on the facts that the naphthoquinone-diazide moiety is decomposed to indenecarboxylic acid (polar compound) by photolysis upon UV irradiation and that the irradiated resist film insolubilizes in a non-polar developer. LMR-UV reliably forms 0.6 μm lines and spaces over a reflective substrate with steps by using a g-line stepper having a 0.35 NA lens. 0.6 μm-wide aluminum patterns over topography are obtained by use of g-line exposure and reactive ion etching. By use of an i-line aligner (NA = 0.42), LMR-UV resolves 0.25 μm space patterns with overhang profiles. The profiles are due to the large absorption coefficient of 3.8 μm^?1. 0.3 μm wide aluminum patterns are formed by i-line exposure and lift-off metallization.     

Properties of Va metal-B films prepared by r.f.-sputtering

Ta_100-x B _x alloy films were prepared by r.f.-sputtering in the chemical composition range 45 x 77. Ta_100-x B _x (45 x 58) films consist of the amorphous phase, while the TaB₂ crystal phase was observed in Ta_100-x B _x (66 x 77) films. A remarkable preferred orientation with the (001) plane of TaB₂ parallel to the film surface was observed in Ta₃₄B₆₆. The d.c. electrical conductivity of Ta_100-x B _x (45 x 77) films decreases with increasing boron content in the range 6.7 × 10³ to 1.3 × 10^3–1 cm^–1. The micro-Vickers hardness of Ta_100-x B _x (45 x 77) films was in the range 2200 to 2600 kg mm^–2.     

Preparation of Co-N films by rf-sputtering

Co-N films in the wide compositional range can be prepared by reactive sputtering. Co-N sputtered films consist of one or two phases, such as CoN, Co₂N, Co₃N, Co₄N and -Co. Co₄N phase with a cubic unit cell is observed, and its lattice constant isa = 0.3586 nm. The preferred orientation is observed on the Co-N films, CoN (200) plane, Co₄N (1 1 1) plane and -Co (002) plane parallel to the film surface, respectively. Saturation magnetization _s of Co-N sputtered film decreases from 160 to 1.7 e.m.u. g^–1 with increasing content of N from 0 to 21.7 at%, and coercive force_I H _c is the range of 43 to 5000e at room temperature.     

Junction properties of polypyrrole containing a small amount of poly(ethylene oxide) with indium

A method to generate a porous region near the surface of a polymer is suggested. In this method the region near the surface is swollen by immersing the polymer for a short time in a solvent. Subsequently, the polymer is introduced in a nonsolvent (for the polymer) that is, however, miscible with the solvent. The formation of the porous region is a result of (1) the swelling accompanied by the disentanglement of the surface molecular chains, and the dissolution of some of them during the immersion in the solvent, and (2) the rapid extraction of the solvent from the swollen region by the nonsolvent. The porous surface provides a matrix into which a second incompatible monomer can be polymerized so that the two otherwise incompatible polymers can adhere to one another.     

Chemospecific ring-opening polymerization of α-methylenemacrolides

α-Methylenemacrolides having various groups, such as aromatic, ether, and amine, were enzymatically, anionically, and radically polymerized. The polymerization with the lipase catalyst successfully afforded polymers only through the ring-opening process, whereas the vinyl polymerizations selectively proceeded by using anionic and radical initiators. The polyesters obtained by the enzymatic polymerization have a polymerizable methacrylic methylene group in the main-chain, in addition to the aromatic and polar groups, and were further radically polymerized to quantitatively produce a cross-linked polymer gel.     

Observation of single-walled carbon nanotubes by photoemission microscopy

Single-walled carbon nanotube networks grown on SiO₂ pillars were studied by means of scanning photoemission microscopy. The individual nanotubes or nanotube bundles growing from the pillar tops were observed in C 1s images. Band bending near catalytic Fe/nanotube contacts in an end-bonded configuration was studied by measuring C 1s spectra along the tube axes. Within our experimental resolution, no band bending was observed. This implies that the depletion width is less than the spatial resolution of the scanning photoemission microscope (90 nm) or that the amount of the band bending is less than 0.1 eV.     

Anodic Dissolution of Uranium Mononitride in Lithium Chloride-Potassium Chloride Eutectic Melt

Uranium-plutonium nitride is a candidate fuel for fast reactors, but its major drawback is ¹⁴C formation from natural nitrogen. One would probably have to use highly ¹⁵N-enriched nitrogen. A pyrochemical process with molten-salt electroreflning has been proposed as a means to increase the nuclear proliferation resistance of the fuel cycle. Molten-salt electroreflning could also be applied to nitride fuels to make possible the recycling of ¹⁵N. The anodic dissolution behavior of UN in LiCI-KCI melt was studied to provide the basis for a feasibility study of electroreflning of irradiated nitride fuels.     

Selective O-methylation of phenol with dimethyl carbonate over X-zeolites

The O-methylation of phenol with dimethyl carbonate proceeds selectively in the vapor phase over alkali ion exchanged X-zeolites. Thus, a 76% yield of anisole was obtained with a 93% selectivity over NaX at 553 K. The participation of basic sites in the O-methylation is suggested.