Understanding and optimizing spin injection in self-assembled InAs/GaAs quantum-dot molecular structures

Semiconductor quantum-dot (QD) structures are promising for spintronic applications owing to their strong quenching of spin relaxation processes that are promoted by carrier and exciton motions. Unfortunately, the spin injection efficiency in such nanostructures is very low and the exact physical mechanism of the spin loss is still not fully understood. Here, we show that exciton spin injection in self-assembled InAs/GaAs QDs and QD molecular structures (QMSs) is dominated by localized excitons confined within the QD-like regions of the wetting layer (WL) and GaAs barrier layer that immediately surround the QDs and QMSs. These localized excitons in fact lack the commonly believed 2D and 3D character with an extended wavefunction. We attribute the microscopic origin of the severe spin loss observed during spin injection to a sizable anisotropic exchange interaction (AEI) of the localized excitons in the WL and GaAs barrier layer, which has so far been overlooked. We determined that the AEI of the injected excitons and, thus, the efficiency of the spin injection processes are correlated with the overall geometric symmetry of the QMSs. This symmetry largely defines the anisotropy of the confinement potential of the localized excitons in the surrounding WL and GaAs barrier. These results pave the way for a better understanding of spin injection processes and the microscopic origin of spin loss in QD structures. Furthermore, they provide a useful guideline to significantly improve spin injection efficiency by optimizing the lateral arrangement of QMSs and overcome a major challenge in spintronic device applications utilizing semiconductor QDs.

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A Chemically Doped Naphthalenediimide‐Bithiazole Polymer for n‐Type Organic Thermoelectrics

The synthesis of a novel naphthalenediimide (NDI)‐bithiazole (Tz2)‐based polymer [P(NDI2OD‐Tz2)] is reported, and structural, thin‐film morphological, as well as charge transport and thermoelectric properties are compared to the parent and widely investigated NDI‐bithiophene (T2) polymer [P(NDI2OD‐T2)]. Since the steric repulsions in Tz2 are far lower than in T2, P(NDI2OD‐Tz2) exhibits a more planar and rigid backbone, enhancing π–π chain stacking and intermolecular interactions. In addition, the electron‐deficient nature of Tz2 enhances the polymer electron affinity, thus reducing the polymer donor–acceptor character. When n‐doped with amines, P(NDI2OD‐Tz2) achieves electrical conductivity (≈0.1 S cm^?1) and a power factor (1.5 µW m^?1 K^?2) far greater than those of P(NDI2OD‐T2) (0.003 S cm^?1 and 0.012 µW m^?1 K^?2, respectively). These results demonstrate that planarized NDI‐based polymers with reduced donor–acceptor character can achieve substantial electrical conductivity and thermoelectric response.