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ESR studies have been undertaken for various chemical composition of electron beam evapo-rated a-Si_(1-x)Gd_x films with 0相似文献
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The properties of temperature dependence of conductivity σ of electron beam evaporateda-Si_(1-x)Gd_x films which was deposited on some substrates of glass and Al-foil at a substrate temperature ofapproximately 300℃ in a background pressure about 2×10~(-4) Pa with a deposition speed about 0.2 nm/swas analyzed and studied.The forms of Gd~(3+) ions in the films,the dangling bond compensation achieved byGd~(3+) ions and the impurity states compensation achieved by structural disorder aroused by doping Gd ele-ment into a-Si film could be the key factors in resolving the properties of conduction in a-Si_(1-x)Gd_x films.Inthe temperature region of 290 K相似文献
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