CSP低碳钢过冷奥氏体的连续冷却转变

通过膨胀法在THERMECMASTOR-Z热模拟实验机上测定了CSP低碳钢的连续冷却转变曲线;通过金相试验分析了其室温产物的微观组织。结果表明：随着冷却速度的增大,相变开始温度和结束温度均降低,晶粒明显被细化。     

浅析压力加工工具的材质及表面处理对金属粘结的影响

我国是一个工业大国,在企业制造中,压力加工是非常重要的一个环节,会影响产品质量.为了确保产品使用效果,要加强分析压力加工工具的材质及表面处理对金属粘结的影响,在此基础上,更好地选择压力加工工具.先介绍工具与变形金属间摩擦与粘结的相关内容,再论述加工工具材质选择及表面处理,不断提升应用水平.     

改进型CIC抽取滤波器设计与FPGA实现

为了改善级联积分梳状(CIC)滤波器通带不平和阻带衰减不足的缺点,给出一种改进型CIC滤波器.该滤波器在采用COSINE滤波器提高阻带特性的基础上,级联了一个SINE滤波器,补偿了其通带衰减.硬件实现时,采用新的多相分解方法结合非递归结构,不仅大大减少了存储单元数量,还使电路结构更加规则.经仿真和FPGA验证,改进型CIC滤波嚣使用较少硬件,实现了阻带衰减100.3 dB,通带衰减仅为0.000 1 dB.     

1.0 V low voltage CMOS mixer based on voltage control load technique

A CMOS active mixer based on voltage control load technique which can operate at 1.0 V supply voltage was proposed,and its operation principle,noise and linearity analysis were also presented.Contrary to the conventional Gilbert-type mixer which is based on RF current-commutating,the load impedance in this proposed mixer is controlled by the LO signal,and it has only two stacked transistors at each branch which is suitable for low voltage applications.The mixer was designed and fabricated in 0.18 μm CMOS pr...     

应用于subLVDS接口的1.5Gb/s收发器设计

介绍了subLVDS接口的系统结构并给出一种改进的内部收发器实现电路.为了稳定直流工作点,在发送器内部加入与电源电压无关的自偏置电压源和共模负反馈电路;通过轨到轨预放大器,接收器的共模输入电压可以达到电源至地的范围.SMIC0.18μm 1P6M的工艺下,仿真结果表明该系统对随机输入数据的工作速度可以达到1.5Gb/s,工作温度范围为-40～120℃.     

Low power consumption high speed CMOS dual-modulus 15/16 prescaler for optical and wireless communications

Frequency synthesizer is an important part of optical and wireless communication system. Low power comsumption prescaler is one of the most critical unit of frequency synthesizer. For the frequency divider, it must be programmable for channel selection in multi-channel communication systems. A dual-modulus prescaler (DMP) is needed to provide variable division ratios. DMP is considered as a critical power dissipative block since it always operates at full speed. This paper introduces a high speed and low power complementary metal oxide semiconductor (CMOS) 15/16 DMP based on true single-phase-clock (TSPC) and transmission gates (TGs) cell. A conventional TSPC is optimized in terms of devices size, and it is resimulated. The TSPC is used in the synchronous and asynchronous counter. TGs are used in the control logic. The DMP circuit is implemented in 0.18 μm CMOS process. The simulation results are provided. The results show wide operating frequency range from 7.143 MHz to 4.76 GHz and it comsumes 3.625 mW under 1.8 V power supply voltage at 4.76 GHz.     

一种全负载稳定的高PSRR LDO的设计北大核心CSCD

提出了一种高电源纹波抑制比的低压差线性稳压器.该低压差线性稳压器通过提高带隙基准的电源抑制比以达到提高LDO(低压差线性稳压器)低频电源纹波抑制的能力.在TSMC 0.18μm CMOS工艺下进行了仿真验证,仿真结果表明,该LDO最大负载电流可以达到80mA,当负载电流在0~80mA范围内变化时,开环相位裕度均大于64°,证明了低压差线性稳压器的高稳定性.当负载电流从0mA跳变到80mA时,系统的输出电压过冲仅为15mV,环路响应时间仅为0.5μs.当负载电流为80mA,测得10kHz时的电源纹波抑制比为-60.82dB,100kHz时LDO的电源纹波抑制比为-57.66dB.     

A low-voltage low-power CMOS voltage reference based on subthreshold MOSFETs

This paper describes a CMOS voltage reference using only resistors and transistors working in weak inversion,without the need for any bipolar transistors.The voltage reference is designed and fabricated by a 0.18μm CMOS process.The experimental results show that the proposed voltage reference has a temperature coefficient of 370 ppm/℃at a 0.8 V supply voltage over the temperature range of-35 to 85℃and a 0.1%variation in supply voltage from 0.8 to 3 V.Furthermore,the supply current is only 1.5μA at 0.8 V supply voltage.     

OFDM系统中流水线型FFT(IFFT)处理器设计

通过流水线结构和乒乓RAM相结合,改进了时域抽取的Radix-4算法,实现了一种适合于OFDM系统的高效流水线型FFT(IFFTI)处理器的VLSI设计.在时钟频率125 MHz下,完成一次1024点16 bit位长的复数FFT需时49.57μs.     

一种高精度CMOS带隙基准电路的设计

采用ASMC0.35μm CMOS工艺设计了低功耗、高电源抑制比(PSRR)、低温漂、输出1V的带隙基准源电路。该设计中,偏置电压采用级联自偏置结构,运放的输出作为驱动的同时也作为自身电流源的驱动,实现了与绝对温度成正比(PTAT)温度补偿。通过对其进行仿真验证,当温度在-40～125℃和电源电压在1.6～5V时,输出基准电压具有3.68×10-6/℃的温度系数,Vref摆动小于0.094mV;在低频时具有-114.6dB的PSRR,其中在1kHz时为-109.3dB,在10kHz时为-90.72dB。