CdTe thin films were prepared using e-beam evaporation technique. The prepared films were irradiated by Ar
+ ions at different fluencies using multipurpose aluminum (Al) probe as
in-situ. This could also be used in ion bombardment for cleaning the substrate prior to coating. The as grown and Ar
+ ion irradiated films were confirmed to be of polycrystalline nature with X-ray technique. Ar
+ ion irradiation enhances the growth of (1 1 1) oriented CdTe crystals and the Cd enrichment on the surface of CdTe thin films. Higher Ar
+ ion flux helps to grow (2 2 0) oriented CdTe thin film. A considerable change in structural parameters like crystallite size, lattice parameter, internal strain, etc. could be observed as a result of high Ar
+ ion flux. The applied in-plan stress in both as grown and irradiated film was identified to be of tensile nature. The applied stress was observed between 0.016 and 0.067 GPa for all Ar
+ ion irradiated samples. As a result of the Ar
+ ion irradiation, the in-plan stress varies between 1.38×10
9 and 5.58×10
9 dyn/cm
2. The observed bad gap was increased for higher Ar
+ ion flux. It shows the effect of Ar
+ ion irradiation on the modifications of optical properties. The observed results were encouraging on the use of simple multipurpose Al probe for Ar
+ ion irradiation process as
in-situ.
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