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1.
R. D. Dupuis J. C. Bean J. M. Brown A. T. Macrander R. C. Miller L. C. Hopkins 《Journal of Electronic Materials》1987,16(1):69-77
We report the results of studies which have been made on heteroepitaxial layers of GaAs and AlGaAs grown by metalorganic chemical
vapor deposition on composite substrates that consist of four different types of heteroepitaxial layered structures of Ge
and Ge-Si grown by molecular beam epitaxy on (100)-oriented Si substrates. It is found that of the four structures studied,
the preferred composite substrate is a single layer of Ge ∼1 μm thick grown directly on a Si buffer layer. The double-crystal
X-ray rocking curves of 2 μm thick GaAs films grown on such substrates have FWHM values as small as 168 arc sec. Transmission
electron micrographs of these Ge/Si composite substrates has shown that the number of dislocations in the Ge heteroepitaxial
layer can be greatly reduced by an anneal at about 750° C for 30 min which is simultaneously carried out during the growth
of the GaAs layer. The quality of the GaAs layers grown on these composite substrates can be greatly improved by the use of
a five-period GaAs-GaAsP strained-layer superlattice (SLS). Using the results of these studies, low-threshold optically pumped
AlGaAs-GaAs DH laser structures have been grown by MOCVD on MBE Ge/Si composite substrates. 相似文献
2.
JL Habrand PY Bondiau O Dupuis C Lévy-Piedbois JL Marin O Oberlin 《Canadian Metallurgical Quarterly》1997,1(6):810-816
PURPOSE: To examine benzoporphyrin derivative angiography as a modality for studying photosensitizer biodistribution in experimental choroidal melanomas. METHODS: A liposomal preparation of benzoporphyrin derivative was used in this study. Digital benzoporphyrin derivative angiograms were performed in 10 rabbits (six for experimental choroidal melanomas, two for normal choroids, and two for irides) using a Topcon ImageNet H1024 digital imaging system, a Kodak Megaplus video camera, and a Topcon TRC-50-VT fundus camera. Only one eye from each rabbit was used. Filters specifically designed for benzoporphyrin derivative (peak absorption at 580 nm and peak emission at 695 nm) were used. Benzoporphyrin derivative (1 mg/kg) was injected into an ear vein while images of tumor, normal choroid, or iris were being obtained. Follow-up images were obtained during the first 3 hours and at 24 hours after injection. Fluorescence microscopy was performed in all 10 rabbits using 1 mg/kg of benzoporphyrin derivative. Tumor-bearing eyes were enucleated at the same time points that angiograms were performed, and the two sets of results were compared for maximum dye accumulation. RESULTS: Digital angiography demonstrated that maximal benzoporphyrin derivative fluorescence occurred in tumors 15 to 45 minutes after injection. Fluorescence photometry corroborated these results. CONCLUSION: Photosensitizer angiography is a valid modality for determining the optimum treatment time for photodynamic therapy. 相似文献
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Garrett BC Dixon DA Camaioni DM Chipman DM Johnson MA Jonah CD Kimmel GA Miller JH Rescigno TN Rossky PJ Xantheas SS Colson SD Laufer AH Ray D Barbara PF Bartels DM Becker KH Bowen KH Bradforth SE Carmichael I Coe JV Corrales LR Cowin JP Dupuis M Eisenthal KB Franz JA Gutowski MS Jordan KD Kay BD Laverne JA Lymar SV Madey TE McCurdy CW Meisel D Mukamel S Nilsson AR Orlando TM Petrik NG Pimblott SM Rustad JR Schenter GK Singer SJ Tokmakoff A Wang LS Wettig C Zwier TS 《Chemical reviews》2005,105(1):355-390
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Wong M.M. Chowdhury U. Sicault D. Becher D.T. Denyszyn J.C. Zhu T.G. Feng M. Dupuis R.D. 《Electronics letters》2002,38(9):428-429
The performance of an innovative delta-doped AlGaN/AlN/GaN heterojunction field-effect transistor (HFET) structure is reported. The epitaxial heterostructures were grown on semi-insulating SiC substrates by low-pressure metalorganic chemical vapour deposition. These structures exhibit a maximum carrier mobility of 1058 cm2/V s and a sheet carrier density of 2.35×1013 cm-2 at room temperature, corresponding to a large ns μn product of 2.49×1016 V s. HFET devices with 0.25 μm gate length were fabricated and exhibited a maximum current density as high as 1.5 A/mm (at VG=+1 V) and a peak transconductance of gm=240 mS/mm. High-frequency device measurements yielded a cutoff frequency of ft≃50 GHz and maximum oscillation frequency fmax≃130 GHz 相似文献
8.
The complementarity of two renewable energy sources, namely hydro and wind, is investigated. We consider the diversification effect of wind power to reduce the risk of water inflow shortages, an important energy security concern for hydropower-based economic zones (e.g. Québec and Norway). Our risk measure is based on the probability of a production deficit, in a manner akin to the value-at-risk, simulation analysis of financial portfolios. We examine whether the risk level of a mixed hydro-and-wind portfolio of generating assets improves on the risk of an all-hydro portfolio, by relaxing the dependence on water inflows and attenuating the impact of droughts. Copulas are used to model the dependence between the two sources of energy. The data considered, over the period 1958–2003, are for the province of Québec, which possesses large hydro and wind resources. 相似文献
9.
Theodore Chung Jae Limb Jae-Hyun Ryou Wonseok Lee Peng Li Dongwon Yoo Xue-Bing Zhang Shyh-Chiang Shen Russell D. Dupuis David Keogh Peter Asbeck Ben Chukung Milton Feng Dimitri Zakharov Zusanne Lilienthal-Weber 《Journal of Electronic Materials》2006,35(4):695-700
The design and growth of GaN/InGaN heterojunction bipolar transistors (HBTs) by metalorganic chemical vapor deposition (MOCVD)
are studied. Atomic-force microscopy (AFM) images of p+InGaN base layers (∼100 nm) deposited under various growth conditions indicate that the optimal growth temperature is limited
to the range between 810 and 830°C due to a trade-off between surface roughness and indium incorporation. At these temperatures,
the growth pressure must be kept above 300 Torr in order to keep surface pit density under control. An InGaN graded-composition
emitter is adopted in order to reduce the number of V-shaped defects, which appear at the interface between GaN emitter and
InGaN base and render an abrupt emitter-base heterojunction nearly impossible. However, the device performance is severely
limited by the high p-type base contact resistance due to surface etching damage, which resulted from the emitter mesa etch. 相似文献
10.
The patellar tendon reflex (PTR) and simple visual reaction time (RT) were fractionated and compared in 40 subjects with developmental coordination disorder (DCD) and normal coordination (NC) in two age groups. Four equal groups of subjects, 6 years DCD (6DCD), 6 years NC (6NC), 9 years DCD (9DCD), and 9 years NC (9NC) were compared using ANOVA for the main effects of coordination and age. PTR and its components of reflex latency and motor time were not significantly affected by the level of coordination; however, a significant coordination by age interaction (p < .05) revealed an increased motor time in the 6DCD group. RT, premotor time, and motor time were all significantly (p < .05) increased in children with DCD; the increased RT and premotor time support earlier findings, whereas the increased motor time has not previously been found. These findings suggest that the processing of reflexive and volitional responses by children with DCD differs from that of their NC peers. 相似文献