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1.
Pengfei Liang Jie Zhu Di Wu Hui Peng Xiaolian Chao Zupei Yang 《Journal of the American Ceramic Society》2021,104(6):2702-2710
Due to the demand of miniaturization and integration for ceramic capacitors in electronic components market, TiO2-based ceramics with colossal permittivity has become a research hotspot in recent years. In this work, we report that Ag+/Nb5+ co-doped (Ag1/4Nb3/4)xTi1−xO2 (ANTOx) ceramics with colossal permittivity over a wide frequency and temperature range were successfully prepared by a traditional solid–state method. Notably, compositions of ANTO0.005 and ANTO0.01 respectively exhibit both low dielectric loss (0.040 and 0.050 at 1 kHz), high dielectric permittivity (9.2 × 103 and 1.6 × 104 at 1 kHz), and good thermal stability, which satisfy the requirements for the temperature range of application of X9R and X8R ceramic capacitors, respectively. The origin of the dielectric behavior was attributed to five dielectric relaxation phenomena, i.e., localized carriers' hopping, electron–pinned defect–dipoles, interfacial polarization, and oxygen vacancies ionization and diffusion, as suggested by dielectric temperature spectra and valence state analysis via XPS; wherein, electron-pinned defect–dipoles and internal barrier layer capacitance are believed to be the main causes for the giant dielectric permittivity in ANTOx ceramics. 相似文献
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F.T. Munna Vidhya Selvanathan K. Sobayel Ghulam Muhammad Nilofar Asim Nowshad Amin Kamaruzzaman Sopian Md. Akhtaruzzaman 《Ceramics International》2021,47(8):11003-11009
In this study, dilute chemical bath deposition technique has been used to deposit CdZnS thin films on soda-lime glass substrates. The structural, morphological, optoelectronic properties of as-grown films have been investigated as a function of different Zn2+ precursor concentrations. The X-ray diffractogram of CdS thin-film reveals a peak corresponding to (002) plane with wurtzite structure, and the peak shift has been observed with the increase of the Zn2+ concentration upon formation of CdZnS thin film. From morphological studies, it has been revealed that the diluted chemical bath deposition technique provides homogeneous distribution of film on the substrate even at a lower concentration of Zn2+. Optical characterization has shown that the transparency of the film is influenced by Zn2+ concentration and when the Zn2+ concentration is varied from 0 M to 0.0256 M, bandgap values of resulting films range from 2.42 eV to 3.90 eV while. Furthermore, electrical properties have shown that with increasing zinc concentration the resistivity of the film increases. Finally, numerical simulation validates and suggests that CdZnS buffer layer with composition of 0.0032 M Zn2+ concentration would be a promising candidate in CIGS solar cell. 相似文献
5.
Journal of Chemical Ecology - Biocontrol agents such as parasitic wasps use long-range volatiles and host-associated cues from lower trophic levels to find their hosts. However, this chemical... 相似文献
6.
Hui Liu Yaohui Fu Jinhai Yuan Lei Yu Zhefei Wang Quan Liu Bo Wei Xuhong Wang 《Ceramics International》2021,47(12):16570-16578
To provide a basis for the high-temperature oxidation of ultra-high temperature ceramics (UHTCs), the oxidation behavior of Zr3[Al(Si)]4C6 and a novel Zr3[Al(Si)]4C6-ZrB2-SiC composite at 1500 °C were investigated for the first time. From the calculation results, the oxidation kinetics of the two specimens follow the oxidation dynamic parabolic law. Zr3[Al(Si)]4C6 exhibited a thinner oxide scale and lower oxidation rate than those of the composite under the same conditions. The oxide scale of Zr3[Al(Si)]4C6 exhibited a two-layer structure, while that of the composite exhibited a three-layer structure. Owing to the volatilization of B2O3 and the active oxidation of SiC, a porous oxide layer formed in the oxide scale of the composite, resulting in the degradation of its oxidation performance. Furthermore, the cracks and defects in the oxide scale of the composite indicate that the reliability of the oxide scale was poor. The results support the service temperature of the obtained ceramics. 相似文献
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盾构隧道施工物料无人运输有助于提升运输效率、降低运输成本、减少运输安全事故率。与公路汽车无人驾驶、港口车辆无人驾驶、轨道交通无人驾驶等逐步成熟的无人驾驶技术不同,在隧道场景下实施施工物料无人运输存在运输物料种类繁多、运输调度困难、地下定位信号拒止、狭窄车道频繁会车、行车路面工况复杂、地上地下联动响应慢等诸多挑战。从实现盾构隧道施工物料无人运输的关键问题分析入手,综述当前盾构隧道施工物料运输方式、运输需求、无人运输发展现状及存在的挑战,提出盾构隧道施工物料无人运输的五大关键技术:多种类物料智能货控能效管理技术,无人化垂直装卸门机控制技术,多传感器融合同步定位与地图构建技术,隧道复杂环境路径规划与自主避障技术,隧-地一体化联动响应的高可靠性无线通信技术。 相似文献
9.
Kravchenko V. F. Konovalov Ya. Yu. 《Journal of Communications Technology and Electronics》2022,67(8):952-964
Journal of Communications Technology and Electronics - A new design of wavelets based on the convolution of a compactly supported function with a rectangular pulse is proposed and theoretically... 相似文献
10.
Journal of Communications Technology and Electronics - A statistical study of the effectiveness of the non-threshold search procedure for a noise-like phase-shift keyed signal by the delay time is... 相似文献