Parameter evaluation in automated digital deep-level transientspectroscopy (DLTS)

A method of directly evaluating the activation energy ΔE, capture cross section σ, and density N_T, of deep-level traps from the pulsed reverse bias capacitance transient is described. The main advantages of this technique are that it requires only a single temperature scan, and it can resolve nonexponential transients due to closely-spaced energy levels. The test samples used for this paper consisted of Schottky diodes fabricated on nonirradiated and 1-MeV electron-irradiated n-type VPE (vapor-phase epitaxy) GaAs wafers. The well known EL2 trap was identified with ΔE of 0.81 eV, and σ _n of 1.0×10^-13 cm² for the nonirradiated sample. These values were found to be in good agreement with published data using established, conventional DLTS techniques. For the irradiated samples a nonexponential capacitance transient was found in the EL2 range of temperatures. The discussed technique was able to resolve two closely spaced deep levels lying at E_c-0.81 eV and E_c-0.84 eV, and with capture cross sections of 1.5×10^-13 cm² and 2.5×10^-12 cm², respectively     

Transient emission from microstrip interconnects: theoreticalformulation and CAD modeling

A hybrid technique suitable for the space-time analysis of the transient spurious emission from microstrip interconnects is presented. The proposed technique requires the preliminary evaluation of the surface current excited on the microstrip interconnecting lines by means of a transmission line model accounting for dispersive effects. The radiated field is then computed in the frequency domain by applying the saddle-point asymptotic technique to the integral expression of the electric field involving the dyadic Green's function. The transient signals excited along the interconnects, and the corresponding radiated field, are finally determined by using the IFFT. Radiation mechanisms are investigated, and the influence of the structure's electrical and geometrical parameters is discussed     

Comparisons of computed mobile phone induced SAR in the SAM phantom to that in anatomically correct models of the human head

The specific absorption rates (SAR) determined computationally in the specific anthropomorphic mannequin (SAM) and anatomically correct models of the human head when exposed to a mobile phone model are compared as part of a study organized by IEEE Standards Coordinating Committee 34, Sub-Committee 2, and Working Group 2, and carried out by an international task force comprising 14 government, academic, and industrial research institutions. The detailed study protocol defined the computational head and mobile phone models. The participants used different finite-difference time-domain software and independently positioned the mobile phone and head models in accordance with the protocol. The results show that when the pinna SAR is calculated separately from the head SAR, SAM produced a higher SAR in the head than the anatomically correct head models. Also the larger (adult) head produced a statistically significant higher peak SAR for both the 1- and 10-g averages than did the smaller (child) head for all conditions of frequency and position.     

Multi-heterojunction large area HgCdTe long wavelength infrared photovoltaic detector for operation at near room temperatures

This paper describes a new multi-heterojunction n ⁺pp photovoltaic infrared photodetector. The device has been developed specifically for operation at temperatures of 200–300K in the long wavelength (8–14 μm) range of the infrared spectrum. The new structure solves the perennial problems of poor quantum efficiency and low dynamic resistance found in conventional long wavelength infrared photovoltaic detectors when operated near room temperature. Computer simulations show that devices with properly optimized multiple heterojunctions are capable of achieving the performance limits imposed by the statistical nature of thermal generation-recombination processes. In order to demonstrate the technology, multiple heterojunction devices have been fabricated on epilayers grown by isothermal vapor phase epitaxy of HgCdTe and in situ As p-type doping. The detector structures were formed using a combination of conventional dry etching, angled ion milling, and angled thermal evaporation for contact metal deposition. These multi-junction n ⁺pp HgCdTe heterostructure devices exhibit performances which make them useful for many applications. D* of optically immersed multiple heterostructure photovoltaic detectors exceeding 10⁸cmHz^1/2/W were measured at λ=10.6 μm and T=300K.     

Heterojunction blocking contacts in MOCVD grown Hg1-xCdxTe long wavelength infrared photoconductors

The theoretical and experimental performance of Hg_1-xCd _xTe long wavelength infrared (LWIR) photoconductors fabricated on two-layer heterostructures grown by in situ MOCVD has been studied. It is shown that heterojunction blocking contact (HBC) photoconductors, consisting of wider bandgap Hg_1-xCd_x Te on an LWIR absorbing layer, give improved responsivity, particularly at higher applied bias, when compared with two-layer photoconductors incorporating n⁺/n contacts. An extension to existing device models is presented, which takes into account the recombination rate at the heterointerface and separates it from that occurring at both the contact-metal/semiconductor and passivant/semiconductor interfaces. The model requires a numerical solution to the continuity equation, and allows the device responsivity to be calculated as a function of applied electric field. Model predictions indicate that a change in bandgap across the heterointerface corresponding to a compositional change of Δx⩾0.04 essentially eliminates the onset of responsivity saturation due to minority carrier sweepout at high applied bias. Experimental results are presented for frontside-illuminated n-type Hg_1-xCd_xTe photoconductive detectors with either n⁺/n contacts or heterojunction blocking contacts. The devices are fabricated on a two-layer in situ grown MOCVD Hg_1-xCd_xTe wafer with a capping layer of x=0.31 and an LWIR absorbing layer of x=0.22. The experimental data clearly demonstrates the difficulty of forming n ⁺/n blocking contacts on LWIR material, and indicates that heterojunctions are the only viable technology for forming effective blocking contacts to narrow bandgap semiconductors     

Magneto-transport characterization using quantitative mobility-spectrum analysis

A quantitative mobility spectrum analysis (QMSA) of experimental Hall and resistivity data as a function of magnetic field is presented. This technique enables the conductivity contribution of bulk majority carriers to be separated from that of other species such as thermally generated minority carriers, electrons, and holes populating n and p doped regions, respectively, and two-dimensional species at surfaces and interface layers. Starting with a suitable first trial function such as the Beck and Anderson mobility spectrum analysis (MSA), a variation on the iterative procedure of Dziuba and Gorska is used to obtain a mobility spectrum which enables the various carrier species present in the sample to be identified. The QMSA algorithm combines the fully automated execution and visually meaningful output format of MSA with the quantitative accuracy of the conventional least-squares multi-carrier fitting procedure. Examples of applications to HgCdTe infrared detector materials and InAs/GaSb quantum wells are discussed. The ultimate goal of this paper is to provide an automated, universal algorithm which may be used routinely in the analysis and interpretation of magneto-transport data for diverse semiconductor materials and bandgap engineered structures.     

Evaluation of plasma deposited silicon nitride thin films for microsystems technology

Plasma deposited silicon nitride thin films were deposited at temperatures between 150/spl deg/C and 300/spl deg/C. Diagnostic microstructures were fabricated from the thin films using bulk micromachining, and the strain was calculated from optical measurement of postbuckling deflection. The results indicate that the residual strain of the thin films is dominated by film-substrate thermal mismatch, with the coefficient of thermal expansion monotonically increasing with decreasing deposition temperature. Metal-insulator-metal devices of variable area were also fabricated to measure the dielectric constant, which was shown to be independent of deposition temperature. The importance of these results to microsystems technology (MST) was briefly discussed.     

Effect of amplitude modulation of the CDMA IS-95 signal on SAR measurements

Miniature probes employed for specific absorption rate (SAR) measurements are typically calibrated using a sinusoidal waveform (SW), even though they may be employed to measure a wide variety of communication signals with complex waveforms. This paper shows that the compression produced by the nonlinear response of the probe versus SAR, due to its diode detector, may introduce a significant overestimation of the SAR produced by CDMA IS-95 waveforms when the diode detector operates well into the compression region. This finding is demonstrated theoretically, verified numerically and experimentally, and physically interpreted. The effect is typically small and may be neglected in many practical circumstances involving low-power RF energy emitters, such as mobile phones or two-way dispatch radios.     

Optical and Structural Properties of CdTe Grown by Molecular Beam Epitaxy at Low Temperature for Resonant-Cavity-Enhanced HgCdTe Detectors

Investigation into resonant-cavity-enhanced (RCE) HgCdTe detectors has revealed a discrepancy in the refractive index of the CdTe layers grown by molecular beam epitaxy (MBE) for the detectors, compared with the reported value for crystalline CdTe. The refractive index of the CdTe grown for RCE detectors was measured using ellipsometry and matches that of CdTe with an inclusion of approximately 10% voids. X-ray measurements confirm that the sample is crystalline and strained to match the lattice spacing of the underlying Hg_(1−x)Cd_(x)Te, while electron diffraction patterns observed during growth indicate that the CdTe layers exhibit some three-dimensional structure. Secondary ion mass spectroscopy results further indicate that there is enhanced interdiffusion at the interface between Hg_(1−x)Cd_(x)Te and CdTe when the Hg_(1−x)Cd_(x)Te is grown on CdTe, suggesting that the defects are nucleated within the CdTe layers.     

Genetic transmission of major affective disorders: Quantitative models and linkage analyses.

We comprehensively reviewed 2 types of studies aimed at specifying the mode of inheritance of major affective disorders: quantitative models and linkage analyses. Quantitative models attempt to represent the genetic mechanism responsible for the familial distribution of a disorder. Despite efforts to refine models by incorporating the bipolar–unipolar distinction or the sex effect, consistent support for a specific mode of transmission has not been found. Some mixed genetic models support single major locus inheritance, but transmission probabilities do not conform to Mendelian expectations. Linkage analysis is a more powerful technique used for testing the single gene hypothesis. Linkage results have also been inconsistent, showing moderate support for an X-linked variant of bipolar-related disorder and equivocal support for linkages to Chromosomes 6 and 11. However, relatively few genetic loci have been examined. Methodological factors, genetic heterogeneity, and phenotypic heterogeneity are discussed as potential explanations for inconsistent findings. (PsycINFO Database Record (c) 2010 APA, all rights reserved)