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1.
The possibility of using quantitative differential thermal analysis to investigate phase transformations is examined. The
temperature, enthalpy, and entropy of polymorphic transformations in LaGe1.8 and SmSi2 are determined: Ttr = 724 K, ΔtrH = 1635 ± 79 J · mole−1, ΔtrS = 2.3 ± 0.1 J · mole−1 · K−1 (LaGe1.8); Ttr = 658 K, ΔtrH = 1384 ± 69 J · mole−1, ΔtrS = 2.1 ± 0.1 J · mole−1 · K−1 (SmSi2).
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Translated from Poroshkovaya Metallurgiya, Vol. 46, No. 3–4 (454), pp. 72–78, 2007. 相似文献
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N. A. Poklonski S. V. Shpakovski N. I. Gorbachuk S. B. Lastovskii 《Semiconductors》2006,40(7):803-807
Silicon p +-n junction diodes irradiated with 3.5-MeV electrons (with the dose of 4 × 1016 cm?2) are studied. The diodes’ inductance (L) was measured at a frequency f = 1 MHz with the amplitude of alternating current equal to 0.25 mA. Simultaneously with measurements of L at alternating current, a direct current was passed through the forward-biased diode, which brought about the injection of minority charge carriers into the base. In order to identify both of the mechanisms that give rise to the inductive-type impedance in irradiated diodes with the p +-n junction and the main radiation defects that are directly involved in the formation of this impedance, irradiated samples were annealed isochronously in the temperature range T a = 225–375°C with sub-sequent study of the main characteristics of the defects by deep-level transient spectroscopy. It is shown that the inductive-type impedance in irradiated diodes is caused by the processes of capture and retention of charge carriers injected into the base at the trapping centers for a time ~1/2f, i.e., for a half-period of oscillations. It is also shown that the trapping centers are the vacancy-oxygen complexes introduced by irradiation with electrons. 相似文献
5.
Measurements have been made on the thermal capacity of γ-Gd2Se3 at 58.88–298.34 K. Values have been obtained for the thermal capacity, entropy, reduced Gibbs energy, and enthalpy under
standard conditions: C°p = 125.87 ± 0.5 J· mole−1 · K−1; S°(298.15 K) = 196.5 · 1.6 J · mole−1 · K−1; Φ°(298.15 K) = 103.6 ± 1.6 J · mole−1 · K−1; H°(298.15 K)-H°(0) = 27681 ± 138 J · mole−1. The enthalpy of Gd2Se3 has been measured and the major thermodynamic functions have been calculated for the solid and liquid states over the temperature
range 450–2300 K. The temperature dependence of the enthalpy in the ranges 300–1800 K and 2000–2300 K are represented: H°(T)-H°(298.15
K) = = 1.1949 · 10−2 · T2 + 122.38 · T + 347402 · T−1 − 38716 and H°(T)-H°(298.15 K) = 262.81 · T-− 196047, respectively. The calculated temperature, enthalpy, and entropy of
melting for Gd2Se3 are: Tm = 1925 ± 40 K, ΔmH° (Gd2Se3) = 68.5 kJ · mole-1, ΔmS°(Gd2Se3) = 35.6 J · mole−1 · K−1.
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Translated from Poroshkovaya Metallurgiya, Nos. 3–4(448), pp. 56–61, March–April, 2006. 相似文献
6.
V. M. Gorbachuk 《Cybernetics and Systems Analysis》2006,42(1):1-7
The concept of the Cournot-Stackelberg-Nash equilibrium is proposed in which the leader’s payoff is no less than its payoff
in the case of the Cournot-Nash equilibrium and the follower’s payoff is no less than its payoff in the case of the Stackelberg-Nash
equilibrium. The generalized equilibrium coincides with the Cournot-Nash and Stackelberg-Nash equilibria for extreme values
of a parameter.
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Translated from Kibernetika i Sistemnyi Analiz, No. 1, pp. 3–9, January–February 2006. 相似文献
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We have studied the heat capacity and enthalpy of LaNi5 at low and high temperatures. Based on low-temperature measurements of the heat capacity, we have calculated the values of the enthalpy, entropy, and reduced Gibbs energy of the intermetallic under standard conditions. We have determined the temperature dependences of the thermodynamic functions for LaNi5 in the temperature range from 298.15 K to 1542 K. 相似文献
9.
The heat capacities of Dy5Ge3, DyGe, and DyGe2 at low temperatures were determined by an adiabatic method for the first time, and the enthalpies, entropies and reduced Gibbs energies at 298.15 K calculated. 相似文献
10.