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Multifunctional 3D Patternable Drug‐Embedded Nanocarrier‐Based Interfaces to Enhance Signal Recording and Reduce Neuron Degeneration in Neural Implantation
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Scientometrics - The expanding presence of multinational research teams highlights the importance of characterizing the outcomes of international collaboration. Herein, we characterize the... 相似文献
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Hsieh-Hung Hsieh Liang-Hung Lu 《Microwave and Wireless Components Letters, IEEE》2006,16(10):552-554
A novel circuit topology for low-phase-noise voltage controlled oscillators (VCOs) is presented in this letter. By employing a PMOS cross-coupled pair with a capacitive feedback, superior circuit performance can be achieved especially at higher frequencies. Based on the proposed architecture, a prototype VCO implemented in a 0.18-/spl mu/m CMOS process is demonstrated for K-band applications. From the measurement results, the VCO exhibits a 510-MHz frequency tuning range at 20GHz. The output power and the phase noise at 1-MHz offset are -3dBm and -111dBc/Hz, respectively. The fabricated circuit consumes a dc power of 32mW from a 1.8-V supply voltage. 相似文献
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Electronic components are constantly under stress due to factors such as signal density, temperature, humidity, and high current and voltage. Relatively little research has emphasized stress-level prediction under voltage stress. The purpose of this paper was to develop an electronic thermal profile model for stress-level prediction utilizing neural network (NN) and statistical approaches, such as multivariate regression models. Electronic components were removed from boards, subjected to different levels of stress, then replaced. An infrared camera was then used to capture information about component temperature changes over time under normal operating and stress conditions. Statistical analysis of the captured images suggests a strong correlation between thermal profiles and voltage stress levels. Artificial neural network (ANN) and statistical approaches were used to model temperature change profiles for components that had been stressed at different levels, and their predictive ability was compared. Separate data sets were used for model development and model verification. ANN prediction rates were around 70%, compared to 30% for the statistical approach. Experiments were also conducted to evaluate the robustness of the ANN model to the presence of noise in the data. Results suggested that the ANN model was able to accommodate the presence of noise. Various backpropagation (BP) learning algorithms were also evaluated and yielded similar average error rates. A 3-2-1 ANN topology performed better than 3-3-1 or 3-2-2-1 topologies, perhaps because the 3-2-1 topology has a higher data sample to nodes ratio than the other topologies. 相似文献
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Using AuGeNiCr multilayered metals as the wafer bonding medium, long-wavelength GaInAsP/InP vertical cavity surface emitting lasers employing Al-oxide/Si as the upper and lower distributed Bragg reflectors were fabricated on Si substrate with the bonding interface formed outside the vertical cavity surface emitting laser cavity. Laser emission at 1.545 μm was measured under pulsed operations near room temperature. The low-temperature metallic bonding process demonstrates a great potential in device fabrication 相似文献
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OL Lopez RP Brenner JT Becker RF Ulrich F Boller ST DeKosky 《Canadian Metallurgical Quarterly》1997,48(6):1521-1525
We examined whether either psychotic features (e.g., delusions and hallucinations) or EEG abnormalities are associated with more rapid progression of Alzheimer's disease (AD). AD patients with psychosis have exhibited more EEG abnormalities than those without psychosis, and both abnormal EEG and psychosis have been noted to be predictors of functional and cognitive decline in AD. Ninety-five probable AD patients participating in a longitudinal study of dementia had an EEG and a semistructured psychiatric interview at baseline. Using EEG spectral analysis, we classified records as normal/abnormal based on the parasagittal mean frequency. Patients with abnormal EEGs were more functionally (e.g., Blessed Rating Scale for activities of daily living) and cognitively (e.g., Mini-Mental State) impaired than patients with normal EEG. AD patients with psychosis were only more functionally impaired than patients without psychosis. A two-factor analysis showed no interaction between abnormal EEG and psychosis. In addition, using a Cox proportional hazard model adjusted for age and education, the presence of an abnormal EEG or psychotic symptom at study entry was associated with higher risk of reaching severe cognitive and functional impairment during follow-up. Neither abnormal EEG nor the presence of psychosis predicted death. These results indicate that both abnormal EEG and psychosis are independent predictors of disease progression but not of physical survival. 相似文献
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H.‐C. Su F.‐C. Fang T.‐Y. Hwu H.‐H. Hsieh H.‐F. Chen G.‐H. Lee S.‐M. Peng K.‐T. Wong C.‐C. Wu 《Advanced functional materials》2007,17(6):1019-1027
Highly efficient orange and green emission from single‐layered solid‐state light‐emitting electrochemical cells based on cationic transition‐metal complexes [Ir(ppy)2sb]PF6 and [Ir(dFppy)2sb]PF6 (where ppy is 2‐phenylpyridine, dFppy is 2‐(2,4‐difluorophenyl)pyridine, and sb is 4,5‐diaza‐9,9′‐spirobifluorene) is reported. Photoluminescence measurements show highly retained quantum yields for [Ir(ppy)2sb]PF6 and [Ir(dFppy)2 sb]PF6 in neat films (compared with quantum yields of these complexes dispersed in m‐bis(N‐carbazolyl)benzene films). The spiroconfigured sb ligands effectively enhance the steric hindrance of the complexes and reduce the self‐quenching effect. The devices that use single‐layered neat films of [Ir(ppy)2sb]PF6 and [Ir(dFppy)2sb]PF6 achieve high peak external quantum efficiencies and power efficiencies of 7.1 % and 22.6 lm W–1) at 2.5 V, and 7.1 % and 26.2 lm W–1 at 2.8 V, respectively. These efficiencies are among the highest reported for solid‐state light‐emitting electrochemical cells, and indicate that cationic transition‐metal complexes containing ligands with good steric hindrance are excellent candidates for highly efficient solid‐state electrochemical cells. 相似文献
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