Fundamentals of modelling concurrency using discrete relational structures

We consider relational structures such that is a set and are two binary relations on . For a number of different classes of structures we show that any structure can be represented as the intersection of its maximal extensions. Such a property – called extension completeness – can be seen as a generalisation of Szpilrajn's theorem which states that each partial order is the intersection of its total order extensions. When can be interpreted as causality and as ‘weak’ causality we obtain a model of concurrent histories generalising that based on causal partial orders. Received 1 February 1994 / 6 May 1996     

Relational structures model of concurrency

The paper deals with the foundations of concurrency theory. We show how structurally complex concurrent behaviours can be modelled by relational structures (X, ¨, \sqsubset){(X, \diamondsuit, \sqsubset)} , where X is a set (of event occurrences), and ¨{\diamondsuit} (interpreted as commutativity) and \sqsubset{\sqsubset} (interpreted as weak causality) are binary relations on X. The paper is a continuation of the approach initiated in Gaifman and Pratt (Proceedings of LICS’87, pp 72–85, 1987), Lamport (J ACM 33:313–326, 1986), Abraham et al. (Semantics for concurrency, workshops in computing. Springer, Heidelberg, pp 311–323, 1990) and Janicki and Koutny (Lect Notes Comput Sci 506:59–74, 1991), substantially developed in Janicki and Koutny (Theoretical Computer Science 112:5–52, 1993) and Janicki and Koutny (Acta Informatica 34:367–388, 1997), and recently generalized in Guo and Janicki (Lect Notes Comput Sci 2422:178–191, 2002) and Janicki (Lect Notes Comput Sci 3407:84–98, 2005). For the first time the full model for the most general case is given.     

Modelling concurrency with comtraces and generalized comtraces

Comtraces (combined traces) are extensions of Mazurkiewicz traces that can model the “not later than” relationship. In this paper, we first introduce the novel notion of generalized comtraces, extensions of comtraces that can additionally model the “non-simultaneously” relationship. Then we study some basic algebraic properties and canonical representations of comtraces and generalized comtraces. Finally we analyze the relationship between generalized comtraces and generalized stratified order structures. The major technical contribution of this paper is a proof showing that generalized comtraces can be represented by generalized stratified order structures.     

Aflatoxins in Foods and Feedstuffs. Part 2. Determination of the aflatoxin B1, B2, G1 and G2 contents in Grain crops1

The simple method for determination of small amounts of aflatoxins (about 5–10 μg/kg) was described. The method was adopted for wheat, barley, rye and oats. Difficulties of aflatoxins determination in cereals are discussed, mainly observed during purification of extracts and resolution by TLC. Different tests were compared for confirmation of aflatoxins in cereals. Results of cereal crops control for contamination with aflatoxins are presented.     

Synthesis and Characterization of Low Viscosity Dimethacrylic Resin Based on Isosorbide

In this article, synthesis and properties of novel dimethacrylic resin (ISETDMA) based on human friendly, biobased isosorbide was described. Its potential as a possible diluting monomer for medical applications, mainly dental restorative systems was assessed. The resin was obtained in two‐step synthesis including ethoxylation of isosorbide and subsequent methacrylation with methacryloyl chloride. ¹HNMR, FTIR, and electrospray ionization mass spectroscopy (ESI‐MS) techniques were used to identify products. ISETDMA as well as composition with 2,2‐bis[4‐(2‐hydroxy‐3‐methacryloyloxypropoxy)phenyl]propane were polymerized using UV initiator IRGACURE 651. Double bond conversion, polymerization shrinkage, water sorption, and sol fraction of resulting polymers were determined. Selected mechanical (flexural strength and modulus, Brinell hardness) and thermomechanical (dynamic mechanical analysis) properties were also investigated. Triethylene glycol dimethacrylate and 2,2‐bis(4‐(2‐methacryloxyethyl‐1‐oxy)phenyl)propane based homopolymers and copolymers were prepared as reference for comparison of particular properties. © 2013 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 130: 2514–2522, 2013     

Application of Green's functions for analysis of transient thermal states in electronic circuits

This paper presents an approach to the modelling of transient thermal states in electronic circuits using an analytical solution of the heat equation. Fully three-dimensional analytical time dependent solutions are determined with the help of Green's functions. The solution method is illustrated in detail on a practical example, where the results of transient thermal simulations of a real hybrid circuit are compared with infrared measurements.     

Comparison of two techniques for reliable characterization of thin metal-dielectric films

In the present study we determine the optical parameters of thin metal-dielectric films using two different characterization techniques based on nonparametric and multiple oscillator models. We consider four series of thin metal-dielectric films produced under various deposition conditions with different optical properties. We compare characterization results obtained by nonparametric and multiple oscillator techniques and demonstrate that the results are consistent. The consistency of the results proves their reliability.     

Implanation de sélénium dans le Ga1?xAlxAs (Implanation of selenium into Ga1?xAlxAs

Par implantation d'ions de sélénium, de fines couches de type n sont obtenues dans le Ga0.71 Al0.29As. Pour les faibles doses, I'activité électrique est proche de 100%, et I'effet de l'implantation est comparable pour le GaAs et le Ga1?x Alx As. Les mêmes resultats sont obtenus en utilisant du Si3N4 ou de l'AIN comme film de protection. By implantation of selenium ions, thin n-type layers are obtained in Ga0.71Al0.29As. For small doses, the electrical activity is close to 100%. and the effect of the implantation is comparable for GaAs and Ga1?x AlxAs. The same results are obtained when using Si3N4 or AlN as a protective film.