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1.
I. I. Bobrinetskii V. K. Nevolin K. A. Tsarik A. A. Chudinov 《Russian Microelectronics》2014,43(1):15-20
A nano-dimensional doping method of near-surface silicon layers using the focused ion beam was studied by software tools based on mathematical calculations of ion ranges in crystals. The sizes of local doping regions and concentrations of impurity atoms as function of real process parameters of the nano-dimensional exposure to the ion gallium beam are calculated. Theoretical boundaries of process doping parameters, taking silicon sputtering into consideration are determined. 相似文献
2.
T. S. Berzina K. V. Gorshkov V. V. Erokhin V. K. Nevolin Yu. A. Chaplygin 《Russian Microelectronics》2013,42(1):27-32
The possibility of integration of graphene films applying the Langmuir-Schaefer method to the structure of the working channel of the organic memristor is investigated. The variation in electrical characteristics of memristor structures in the presence of graphenes in the working channel of the element is analyzed. New effects such as an increased working voltage range and the S-like shape of current-voltage characteristics are found, which is most probably associated with the charge accumulation in the region of graphene sheets. 相似文献
3.
S. N. Grigoriev V. N. Nevolin V. Yu. Fominski R. I. Romanov M. A. Volosova 《Technical Physics Letters》2014,40(9):793-796
We have studied the possibility of controlling important structural characteristics of WSe x films, which belong to the class of layered materials and have good prospects for application in modern nano- and optoelectronic devices. It is established that, by using thermal treatment and ion irradiation during pulsed laser deposition (PLD) in the shadow of an antidroplet shield, it is possible to vary the Se/W atomic ratio from 5 to 1.5, change the character of atomic packing, and obtain films with either smooth or rough surfaces. An increase in the height of parabolic protrusions on the surface up to 200–500 nm leads to a decrease in the optical reflection coefficient in a broad wavelength range from 30% (typical of smooth films) to 6%, which can favor a significant increase in the efficiency of solar cells based on semiconductor films of this type. 相似文献
4.
The growth of vertically oriented carbon nanotubes on nickel clusters formed by nanoimprint lithography is studied. It is shown that the nanotubes only grow at those places where the catalyst clusters are situated and the diameter of the nanotubes exactly corresponds to the dimensions of the nickel islands. 相似文献
5.
A. N. Alekseev S. I. Petrov V. K. Nevolin K. A. Tsarik D. M. Krasovitskii V. P. Chalyi 《Russian Microelectronics》2012,41(7):400-404
Multilayered nitride heterostructures AlN/AlGaN/GaN/AlGaN are grown using a Nanofab-100 multichamber domestic complex involving a STE3N3 specialized installation of molecular beam epitaxy. The obtained heterostructures have high structural quality, smooth morphology, and a low dislocation density, which demonstrates the high potential of the nanotechnological complex. 相似文献
6.
Kulyukhin S. A. Nevolin Yu. M. Seliverstov A. F. 《Theoretical Foundations of Chemical Engineering》2022,56(4):578-583
Theoretical Foundations of Chemical Engineering - A new approach to the processing of the dump waste product stored in the tailings dumps of the nickel production enterprise Punda Gourda (Cuba) has... 相似文献
7.
I. I. Bobrinetskii V. K. Nevolin V. I. Petrik Yu. A. Chaplygin 《Russian Microelectronics》2003,32(2):79-81
Planar two-electrode nonlinear elements using carbon nanotubes doped with platinum metals are created and investigated. Among the nanotubes, branched ones are found. If doped, these nanotubes take a regular form. With appropriate doping, limiting currents above 1 A are achieved. However, the problem of contact between carbon nanotubes and electrodes has yet to be solved. 相似文献
8.
9.
Korolev Vadim V. Bean Jonathan J. Nevolin Yurii M. Kucherinenko Yaroslav V. McKenna Keith P. Protsenko Pavel V. 《Metallurgical and Materials Transactions A》2022,53(2):449-459
Metallurgical and Materials Transactions A - The misorientation of 515 grain boundaries has been determined using electron backscatter diffraction data from an 18 μm thick copper foil with... 相似文献
10.
Fominski V. Yu. Nevolin V. N. Fominski D. V. Romanov R. I. Gritskevich M. D. 《Technical Physics Letters》2020,46(1):83-86
Technical Physics Letters - We present the results of a comparative investigation of the friction and wear characteristics of MoSx and MoSex coatings in an oxidizing medium (argon–air... 相似文献