Due to the demand of miniaturization and integration for ceramic capacitors in electronic components market, TiO2-based ceramics with colossal permittivity has become a research hotspot in recent years. In this work, we report that Ag+/Nb5+ co-doped (Ag1/4Nb3/4)xTi1−xO2 (ANTOx) ceramics with colossal permittivity over a wide frequency and temperature range were successfully prepared by a traditional solid–state method. Notably, compositions of ANTO0.005 and ANTO0.01 respectively exhibit both low dielectric loss (0.040 and 0.050 at 1 kHz), high dielectric permittivity (9.2 × 103 and 1.6 × 104 at 1 kHz), and good thermal stability, which satisfy the requirements for the temperature range of application of X9R and X8R ceramic capacitors, respectively. The origin of the dielectric behavior was attributed to five dielectric relaxation phenomena, i.e., localized carriers' hopping, electron–pinned defect–dipoles, interfacial polarization, and oxygen vacancies ionization and diffusion, as suggested by dielectric temperature spectra and valence state analysis via XPS; wherein, electron-pinned defect–dipoles and internal barrier layer capacitance are believed to be the main causes for the giant dielectric permittivity in ANTOx ceramics. 相似文献
Wireless Personal Communications - Chronic kidney disease (CKD) is a gradual loss of kidney function over the period of time and it is irrevocable once functionality reaches the critical state.... 相似文献
Food Science and Biotechnology - A rich source of nutrients, figs have a number of clinically validated benefits. This study aimed to evaluate the in vitro simulated gastrointestinal digestion, and... 相似文献
Multimedia Tools and Applications - In this work, a new fuzzy logic-based algorithm is proposed for the enhancement of low light color images. A generalization of a fuzzy set known as an... 相似文献
We discuss the temperature dependence of a common low temperature local thermometer, a tunnel junction between a superconductor and a normal metal (NIS junction). Towards the lowest temperatures its characteristics tend to saturate, which is usually attributed to selfheating effects. In this technical note, we reanalyze this saturation and show that the temperature independent subgap current of the junction alone explains in some cases the low temperature behavior quantitatively.
To investigate the evolution of the structural and enhanced magnetic properties of GdMnO3 systems induced by the substitution of Mn with Cr, polycrystalline GdMn1-xCrxO3 samples were synthesized via solid-state reactions. XRD characterization shows that all GdMn1-xCrxO3 compounds with single-phase structures crystallize well and that Cr3+ ions entering the lattice sites of GdMnO3 induce structural distortion. SEM results indicate that the grain size of the synthesized samples (a few microns) decreases as the Cr substitution concentration increases. Positron annihilation lifetime spectroscopy reveals that vacancy-type defects occur in GdMn1-xCrxO3 ceramics and that the vacancy size and concentration clearly change with the Cr content. The temperature and field dependence of the magnetization curves show that Cr substitution significantly influences the magnetic ordering of the gadolinium sublattice, improving the weak ferromagnetic transition temperature and magnetization of GdMn1-xCrxO3. The enhanced magnetization of GdMn1-xCrxO3 is closely related to the vacancy defect concentration. 相似文献
Semiconductors - Abstract—In our work, we carry out a structural-spectroscopic study of AlGaN/GaN epitaxial layers grown by molecular-beam epitaxy with nitrogen-plasma activation on a hybrid... 相似文献
Journal of Communications Technology and Electronics - In recent years, there has been a rapid improvement in photonics products due to the use of multilayer heterostructures grown on the basis of... 相似文献
In this work we analysed the stepwise charging technique to find the limits from which it is beneficial in terms of load capacitance and charge–discharge frequency. We included in the analysis practical limitations such as the consumption of auxiliary logic needed to implement the technique and the minimum size of auxiliary switches imposed by the technology. We proposed an ultra-low-power logic block to push these limits and to obtain benefits from this technique in small capacitances. Finally, we proposed to use a stepwise driver in the driving of the gate capacitance of power switches in switched-capacitor (SC) DC–DC converters. We designed and manufactured, in a 130 nm process, a SC DC–DC converter and measured a 29% energy reduction in the gate-drive losses of the converter. This accounts for an improvement of 4% (from 69 to 73%) in the overall converter efficiency.