Characteristics of planar diodes based on heavily doped GaAs/AlAs superlattices in the terahertz frequency region

Characteristics of ohmic InGaAs contacts in planar diodes based on semiconductor superlattices with a small-area active region (1–10 μm²) are studied. The diodes were formed on the basis of short (18 or 30 periods) heavily doped (10¹⁸ cm⁻³) GaAs/AlAs superlattices with a miniband width of 24.4 meV. The reduced resistance of the ohmic contact was equal to 2×10⁻⁷ Ω cm² at room temperature. It is shown that the properties of fabricated planar diodes make it possible to use these diodes later on in semiconductor devices that operate in the terahertz frequency region in a wide temperature range (4–300 K). __________ Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 38, No. 9, 2004, pp. 1141–1146. Original Russian Text Copyright ? 2004 by Pavel’ev, Demarina, Koshurinov, Vasil’ev, Semenova, Zhukov, Ustinov.     

Photoemission of polarized electrons from InAlGaAs/GaAs superlattices with minimum conduction band offsets

Photoemission of polarized electrons from heterostructures based on InAlGaAs/GaAs superlattices with minimum conduction-band offsets is investigated. The comparison of the excitation energy dependence of the photoemission polarization degree with the calculated spectra make it possible to determine the polarization losses at different stages of the photoemission. A maximum polarization of P = 91% and a quantum yield of 0.14% are close to the best results obtained for photocathodes on the basis of strained semiconductor superlattices.     

Continuous-wave lasing of single-mode metamorphic quantum dot lasers for the 1.5-μm spectral region

Lasers based on InAs/InGaAs quantum dots grown on metamorphic (In,Ga,Al)As layers deposited by MBE on GaAs substrates exhibited emission near 1.5 μm with a differential quantum efficiency of about 50%. The narrow-stripe lasers operate in a single transverse mode and withstand continuous current density above 20 kA cm^?2 without significant degradation. A maximum continuous-wave output power of 220 mW is obtained. Neither current nor beam filamentation was observed up to the highest pumping levels.     

The function of the reproductive system in x-ray-irradiated male rats after the transplantation of a culture of testicular cells from newborn piglets

The effect exerted by transplantation of the 5 day culture of testicles from newly born piglets on the hypogonadal state of mature X-ray irradiated (3 Gy) rats was studied. It has been found that a month after transplantation (two months after irradiation) the hypogonadal state disappeared for a while, which is confirmed by normalization of the weight of seminal vesicles, content of testosterone and biologically active lutropine, restoration of the reproductive function of rats. No significant changes in steroidogenesis activity have been found, which proves a substituent character of transplantation. The effect disappears three months later but certain restoration of the content of nucleic acids in the testicles is observed.