Reliability investigation of 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel

The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications.     

Systematic characterization of Cl2 reactive ion etchingfor improved ohmics in AlGaN/GaN HEMTs

Pre-metal-deposition reactive ion etching (RIE) was performed on an Al_0.3Ga_0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs     

Comparison of Displacement and Mixing Diffusers

In order to cumpare the peformance of different supply diffuers of ventilation air, the airflow passern, temperature stratifiation and contaminant dispersion in a furnitured office ventilated by three kinds of air diffuer were numerically investigated. The air diffuers studied in this paper are a quarter-cylinder displacement diffuer on the floor and mixing diffuers (linear and vortex diffuers) on the ceiling. The heat sources in the of-fice are considered to be 50% convective and 50% radiative. The k-? two-equatwn model of turbulence is employed to predict the turbulent diffusion. The results show that the displacement diffuser provides a rather uniform flow field with low velocify in most areas, and the vertical temperature difference from floor to ceiling is as high as 6 K. With the linear diffuser, the air velociry is high, and the temperature is uniform both horizontally and vertically. The air velocity generated by the vortex diffuser is moderate. The distributions of the temperature and the contaminant are rather uniform.     

Variations in Spectral Slope in Lake Taihu,a Large Subtropical Shallow Lake in China

Spectral slope (S), describing the exponential decrease of the absorption spectrum over a given wavelength range, is an important parameter in the study of of chromophoric dissolved organic matter (CDOM) dynamics, and also an essential input parameter in remote sensing models. Furthermore, S is often used as a proxy for CDOM composition, including the ratio of fulvic to humic acids and molecular weight. The relative broad range in S values reported in the literature can be explained by the different spectral ranges and fitting methods used. A single exponential model is used to fit the S values for 17 investigations involving 458 samples in Lake Taihu from January to October in 2004. The average S value was 15.18 ± 1.39 μm⁻¹ for the range of 280–500 nm, which fell within the range reported in the literature. The frequency distribution of S value basically obeyed a normal distribution. Significant differences in S values between summer and other seasons showed that phytoplankton degradation was one of the important sources of CDOM in summer, whereas CDOM mainly came from the river input in other seasons. Furthermore, the estimated S value decreased with increasing wavelength range used in regression. The maximum and minimum values derived from the regression were 17.89 ± 1.25 μm⁻¹ and 13.62 ± 2.11 μm⁻¹ for the wavelength ranges of 280–380 nm and 400–500 nm, respectively, a decrease of 23.9%. S values significantly decreased with the increase of CDOM absorption coefficients. CDOM absorption coefficients could be more appropriately estimated from exponential model introducing the variation of S with absorption coefficients, making them useful for a remote sensing bio-optical model of Lake Taihu. DOC-specific absorption coefficient a*(λ) and the parameter M describing molecular size of the humic molecules could also be used as a proxy for the sources and types of CDOM. A general relationship was found between S and a*(λ), and M values. S increased with the decrease of DOC-specific absorption coefficient and the increase of M corresponding to the decrease of molecular weight.     

Programmable group-delay module using binary polarization switching

We demonstrate the first programmable group-delay module based on polarization switching. With a unique binary tuning mechanism, the device can generate any differential group delay value from -45 to +45 ps with a resolution of 1.40 ps, or any true-time-delay value from 0 to 45 ps with a resolution of 0.7 ps. The delay varying speeds for both applications are under 1 ms and can be as fast as 0.1 ms. We evaluate both the dynamic and static performances of the device while paying special attention to its dynamic figures of merit for polarization-mode dispersion emulation and compensation applications. Our experiment shows that the device exhibits a negligible transient-effect induced power penalty (<0.2 dB) in a 10-Gb/s nonreturn-to-zero system.     

A three-dimensional non-epitaxial atomistic growth model for thin-film deposition: effect of surface mobility

The effect of the atomic mobility on a film surface has been studied by using a three-dimensional atomistic thin-film deposition model which simulates three-dimensional thin-film images, surface profiles and cross-sectional area pictures. In addition, quantitative results of surface RMS roughness, average film thickness, atomic coordination number and its distribution, and solid fraction of the deposited thin films, were obtained from the simulations. When the film surface mobility increased from 0.3 to 3.0, RMS roughness decreased from 6.5 to 1.1, solid fraction increased from 0.27 to 0.56 and average film thickness decreased from 40 to 28, due to the reduction of the voids within the film. The full-width half magnitude of the atomic coordination distribution became narrower indicating the increased degree of crystallization. With increase in surface mobility crossing the boundary to 1.5, the film evolved from a porous or loose columnar structure with voids, to a densely packed fibrous grain structure which can be categorized by the zone structure models.     

Performance characteristics of parallel resonant convertor

Using a set of characteristic curves derived from the stateplane analysis, a novel approach to the design of the parallel resonant convertor (PRC) is presented. It will be shown that the steady-state response of the convertor can also be obtained from these characteristic curves     

High-speed InGaP/GaAs HBTs with a strained InxGa1-xAs base

A self-aligned InGaP/GaAs heterojunction bipolar transistor with a compositionally graded In_xGa_1-xAs base has been demonstrated with f_T=83 GHz and f_max=197 GHz. To our knowledge, these results are the highest reported for both parameters in InGaP/GaAs HBT's. The graded base, which improves electron transport through the base, results in a DC current gain and a cutoff frequency which are 100% and 20% higher, respectively, than that achieved by an identical device with a nongraded base. The high f_max results from a heavily doped base, self-aligned base contacts, and a self-aligned collector etch. These results demonstrate the applicability of InGaP/GaAs HBT's in high-speed microwave applications