首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   70篇
  免费   0篇
电工技术   1篇
化学工业   2篇
金属工艺   2篇
机械仪表   3篇
建筑科学   4篇
轻工业   2篇
石油天然气   2篇
无线电   3篇
一般工业技术   33篇
冶金工业   15篇
原子能技术   1篇
自动化技术   2篇
  2020年   1篇
  2012年   1篇
  2011年   1篇
  2010年   3篇
  2008年   2篇
  2007年   1篇
  2006年   1篇
  2003年   2篇
  2001年   2篇
  2000年   1篇
  1999年   3篇
  1998年   5篇
  1997年   4篇
  1996年   2篇
  1995年   1篇
  1994年   1篇
  1993年   1篇
  1992年   3篇
  1990年   1篇
  1989年   1篇
  1988年   1篇
  1987年   1篇
  1984年   1篇
  1982年   4篇
  1981年   2篇
  1980年   1篇
  1978年   2篇
  1977年   3篇
  1976年   2篇
  1975年   2篇
  1973年   3篇
  1972年   2篇
  1971年   1篇
  1970年   1篇
  1969年   1篇
  1967年   2篇
  1965年   1篇
  1962年   1篇
  1961年   1篇
  1960年   1篇
排序方式: 共有70条查询结果,搜索用时 15 毫秒
1.
2.
3.
An electron-microscopic study of Herpetomonase sp. (Leptomonas pessoai)   总被引:1,自引:0,他引:1  
The fine structure of the promastigotes of Herpetomonas sp. (Leptomonas pessoai) kept in a defined medium at 28 degrees C is described. This portozoon reveals several features in common with other trypanosomatids. A membrane-bounded organelle measuring 0.2 to 0.8 mum in diameter, similar to that described as peroxisome in Crithidia fasciculata, was also observed. A large cavity, located between the nucleus and the kinetoplast and containing vesicles and small particulate material is discussed in this paper.  相似文献   
4.
5.
We report a systematic study of novel single- and double-layer thermosetting light-emitting devices (LED's) based on triarytamines for hole transport layer and fluorenes for the emitting and electron transport layer. These devices possess high-thermal stability, high-quantum efficiency, and high-bandgap emission (blue and green). We have fabricated dot matrix displays based on analogs of these materials  相似文献   
6.
The defects and microstructure of low-dose (<0.7 × 1018 cm−2), oxygen-implanted silicon-on-insulator (SIMOX) material were investigated as a function of implant dose and annealing temperature by plan-view and cross-sectional transmission electron microscopy. The threading-dislocations in low-dose (0.2∼0.3×1018 cm−2), annealed SIMOX originate from unfaulting of long (∼10 μm), shallow (0.3 μm), extrinsic stacking faults generated during the ramping stage of annealing. As dose increases, the defect density is reduced and the structure of the buried oxide layer evolves dramatically. It was found that there is a dose window which gives a lower defect density and a continuous buried oxide with a reduced density of Si islands in the buried oxide.  相似文献   
7.
A method for determining whether a pregnant woman with an extremely low serum oestriol (ELSE) measurement of mid-trimester is carrying a fetus with steroid sulphatase deficiency or another more serious disorder is described. We undertook GC/MS analysis of steroids in random maternal urine samples and quantified oestriol, oestriol precursors (dehydroepiandrosterone (DHEA), 5-androstene-3 beta, 17 beta-diol, 16 alpha-hydroxy-dehydroepiandrosterone and 5-androstene-3 beta, 16 alpha, 17 beta-triol), pregnanediol, and five other steroids largely unaffected by pregnancy (androsterone, etiocholanolone, tetrahydrocortisol, 5 alpha-tetrahydrocortisol and tetrahydrocortisone). Thirty-two samples collected from seven normal pregnant women between the 7th and 27th week of pregnancy and 22 from individuals with ELSE were analysed. Diagnostic ratios of excreted products were developed. These included ratios of oestriol and oestriol precursors to the cumulative value for the five non-pregnancy-related steroids and ratios of oestriol and oestriol precursors to pregnanediol and to each other. Our data demonstrated high 3 beta-hydroxy-5-ene steroid excretion in all ELSE patients together with low urinary oestriol excretion, a situation only consistent with deficiency of steroid sulphatase. The normal individuals had high oestriol and low excretion of oestriol precursors. No patient in our series showed the low oestriol levels and low oestriol precursor values that would indicate a fetal adrenal abnormality as the underlying defect.  相似文献   
8.
9.
10.
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号