Growth of Ga x In1−x As y P1−y using ethyldimethylindium andt-butylphophine

The growth of GaInAsP lattice matched to GaAs using tertiary-butylphosphine and ethyldimethylindium to replace the more conventional phosphine and trimethylindium is described. The quaternary compound lattice matched to GaAs has received far less attention than related compositions that lattice match InP. Using the new sources, most of the growth problems experienced by previous workers have been avoided. Uniform compositions have been grown reproducibly without evidence of gas-phase, adduct-forming reactions. Bothn- andp-type films have been grown. Heteroepitaxy of high quality GalnAsP layers on Ge has also been achieved, and microstructural results are presented.     

Gestalt perspectives on cognitive science and on experimental psychology.

At the 1st author's request, the 2nd author was interviewed on Gestalt psychology's origins and utility for modern experimental psychology. Wertheimer's connections with Gestalt psychologists Max Wertheimer and Wolfgang K?hler and his study of Gestalt problems and methods, give him a special perspective on these issues. Several points for modern psychology emerge from the Gestalt perspective. Phenomena should be studied within their full context; there is a need to acknowledge the domain specificity of principles in experimental psychology; it is wise to study phenomena that either exist in the real world or have close real-world analogues; psychology must recognize interchanges between organisms and surroundings as determinants of behavior; and a data-driven perspective must complement, and sometimes replace, theory driven searches for broadly applicable, nondomain-specific principles. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Infrared materials for thermophotovoltaic applications

Thermophotovoltaic generation of electricity is attracting renewed attention due to recent advances in low bandgap (0.5–0.7 eV) III-V semiconductors. The use of these devices in a number of applications has been reviewed in a number of publications.^1–4 Two potential low-bandgap diode materials are In_xGa_1−xAs_ySb_1−y and In_xGa_1−xAs. The performance of these devices are comparable (quantum efficiency, open circuit voltage, fill factor) despite the latter’s long-term development for optoelectronics. For an 1100°C blackbody, nominally 0.55 eV devices at 25°C exhibit average photon-weighted internal quantum efficiencies of 70–80%, open circuit voltage factors of 60–65%, and fill factors of 65–70%. Equally important as the energy conversion device is the spectral control filter that effectively transmits above bandgap radiation into the diode and reflects the below bandgap radiation back to the radiator. Recent developments in spectral control technology, including InGaAs plasma filters and nonabsorbing interference filters are presented. Current tandem filters exhibit spectral utilization factors of ∼65% for an 1100°C blackbody.     

Fabrication and analysis of multijunction solar cells with a quantum dot (In)GaAs junction

InAs quantum dots (QDs) have been incorporated to bandgap engineer the (In)GaAs junction of (In)GaAs/Ge double‐junction solar cells and InGaP/(In)GaAs/Ge triple‐junction solar cells on 4‐in. wafers. One sun AM0 current–voltage measurement shows consistent performance across the wafer. Quantum efficiency analysis shows similar aforementioned bandgap performance of baseline and QD solar cells, whereas integrated sub‐band gap current of 10 InAs QD layers shows a gain of 0.20 mA/cm². Comparing QD double‐junction solar cells and QD triple‐junction solar cells to baseline structures shows that the (In)GaAs junction has a V_oc loss of 50 mV and the InGaP 70 mV. Transmission electron microscopy imaging does not reveal defective material and shows a buried QD density of 10¹¹ cm⁻², which is consistent with the density of QDs measured on the surface of a test structure. Although slightly lower in efficiency, the QD solar cells have uniform performance across 4‐in. wafers. Copyright © 2013 John Wiley & Sons, Ltd.     

Fluid transport in thin film polymer processors

An analysis of fluid transport in a polymer processor consisting of a hollow vertical cylinder with rotating blades is presented. The action of the rotating blades causes a thin film to be deposited on the inner surface of the processor and a bow wave to form in front of the blade. Fluid transport through the processor depends upon flow within the bow wave. Three types of flows are identified as contributing to the fluid transport: flow under the influence of a pressure gradient, flow due to gravitational force, and drag flow due to the action of the rotating blades. Equations describing these flows are derived as well as an equation for the bow wave profile. Experimental data in good agreement with the theoretical development are presented.     

Hyperbranched polyhedral oligomeric silsesquioxane (HB‐POSS) nanomaterials for high transmission and radiation‐resistant space and solar applications

Hyperbranched polycarbosiloxanes and polysiloxanes with octafunctional polyhedral oligomeric silsesquioxane (POSS) branchpoints and curable alkoxysilane or silanol end‐groups were formulated with linear polysiloxanes to fabricate transparent and robust nanostructured POSS‐containing materials for use in a range of high performance space and solar applications. The effect of methyl vs. phenyl content, architecture and linear polysiloxane mass on transmission, thermal, physical, and proton, electron and UV radiation resistance properties was determined, and the physical properties of the nanomaterials were tailored to produce adhesives, or rigid or flexible coatings as desired. The methyl formulations showed superior electron resistance relative to a commercial space control material and to a POSS‐free HB polymer control material, even when directly exposed to radiation in coating form, whereas the phenyl formulations were shown to have inferior electron and UV resistance. © 2013 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 130: 3849–3861, 2013     

Group delay and chromatic dispersion of thin-film-based,narrow bandpass filters used in dense wavelength-division-multiplexed systems

Theoretical analysis is made for thin-film-based, 200- and 100-GHz narrow bandpass filters with respect to the intensity response as well as to the chromatic dispersion. The results indicate that the narrower the passband, the higher the chromatic dispersion. The maximum chromatic dispersion appears at the edges of the 0.5-dB passband, owing to the fast change of the group delay in the region. The deviation of chromatic dispersion induced by manufacturing error is simulated. Effective-medium approximation layers are added to simulate the contribution of surface roughness and the mixture interfaces to the passband ripple as well as the chromatic dispersion. The simulations are compared with the experimental results. The measured chromatic dispersion matches the general trend of the theoretical calculation. The imperfect surface and layer mismatch induce additional ripples across the 0.5-dB passband. The maximum chromatic dispersion within a 0.5-dB passband is 20.7 and 54.9 ps/nm for 200- and 100-GHZ narrow bandpass filters, respectively.     

Radiation response of InP/Si and InGaP/GaAs space solar cells

An analysis of the radiation response of state-of-the-art InP/Si, InGaP, and dual junction (DJ) InGaP/GaAs space solar cells under both electron and proton irradiated is presented. The degradation data are modeled using the theory of displacement damage dose. For each technology, a characteristic curve which describes the cell degradation in any radiation environment is determined, and the characteristic curves are used to compare the radiation resistance of the different technologies on an absolute scale. The radiation data are used as input to a code which predicts the end-of-life (EOL) performance of a solar panel in earth orbit. The results show that in orbits outside the earth's radiation belts, the high-efficiency DJ InGaP/GaAs solar panels provide the highest EOL specific power. However, in orbits which pass through the belts, the radiation hard InP/Si panels provide the highest specific power by as much as 30%.     

Dispersive properties of planar polymer Bragg gratings

We report on the first dispersion study performed on planar Bragg gratings for WDM systems. The gratings are produced in low-loss single-mode polymeric waveguides and have a remarkable amplitude response (reflectivity >99.99%, suppressed out-of-band features). The phase response study shows that the dispersion that they introduce in a system (<100 ps/nm) is lower than that typical of fiber Bragg gratings