Gas sensing properties of nanocrystalline diamond films

Toxic gas sensing device with metal electrodes built into nanocrystalline diamond (NCD) is investigated. The NCD morphology is controlled via seeding and/or deposition time. The surface properties and morphology of NCD are studied using scanning electron microscopy (SEM) and atomic force microscopy (AFM). AFM measurements reveal increase in NCD surface area by up to 13%. Gas sensing properties of H-terminated NCD device show high sensitivity towards oxidizing species where the surface conductivity is increased by an order of magnitude for humid air and by three orders of magnitude for COCl₂. The surface conductivity exhibits a small decrease to reducing spices (CO₂, NH₃).     

High optical quality nanocrystalline diamond with reduced non-diamond contamination

It is important for optical applications of nanocrystalline diamond to achieve low optical absorption as well as optical scattering. We discuss the optical and photocurrent spectra measured by the transmittance and reflectance, photothermal deflection spectroscopy, laser calorimetry and dual beam photocurrent spectroscopy of low non-diamond content nanocrystalline diamond films grown by microwave plasma enhanced chemical vapor deposition on fused silica glass substrates.     

Photoneural regulation of rat pineal nitric oxide synthase

We report here a photoneural regulation of nitric oxide synthase (NOS) activity in the rat pineal gland. In the absence of the adrenergic stimulation following constant light exposure (LL) or denervation, pineal NOS activity is markedly reduced. A maximal drop is measured after 8 days in LL. When rats are housed back in normal light:dark (LD) conditions (12:12), pineal NOS activity returns to normal after 4 days. A partial decrease in pineal NOS activity is also observed when rats are placed for 8 days in LD 18:6 or shorter dark phases, indicating that pineal NOS activity reflects the length of the dark phase. Because it is known that norepinephrine (NE) is released at night from the nerve endings in the pineal gland and this release is blocked by exposure to light, our data suggest that NOS is controlled by adrenergic mechanisms. Our observation may also explain the lack of cyclic GMP response to NE observed in animals housed in constant light.     

Repeated treatment with high doses of morphine produces comparable tolerance to low- and high-dose discriminative stimulus effects of morphine.

Morphine tolerance was studied in 9 pigeons (Columba livia, N?=?9) trained to discriminate among a low dose of morphine (1.8 mg/kg), a high dose of morphine (10 mg/kg), and saline. Doses of morphine required for low-dose or high-dose stimulus effects were determined before, during, and after a 4-week treatment period, during which training was suspended. Treatment with 56 mg/kg, but not 10 mg/kg, morphine, b.i.d., increased the doses required for either low-dose or high-dose stimulus effects by approximately 10-fold. Both treatments increased doses required for rate suppression. Sensitivity recovered after a week of saline treatment. Acute treatment with 56 mg/kg morphine did not change sensitivity. These results suggest that chronic morphine treatment can produce surmountable, reversible tolerance to morphine acting as a discriminative stimulus, without disrupting a discrimination between low-dose and high-dose stimulus effects. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Photocurrent study of electronic defects in nanocrystalline diamond

The broad optical spectral range (0.2–6 eV) photoionization spectra of the nominally undoped, carefully oxidized and hydrogenated nanocrystalline diamond (NCD) thin films grown on silicon and sapphire substrates were measured using the dual-beam photoconductivity method (under constant UV light bias). The novel amplitude modulated step scan Fourier transform photocurrent spectroscopy (AMFTPS) was applied in IR region. The wet chemistry etching was used to open 6 × 6 mm window in Si substrate and to create NCD membrane in the silicon frame. In photoionization spectra we found localized defect states with the threshold around 1 eV in both hydrogenated and oxidized NCD films. The threshold of the photoionization cross section shifts towards lower photon energies in the hydrogenated samples. The photosensitivity increases by several orders of magnitude with hydrogenation. We suggest that the main deep defect is related to the nanocrystalline grain boundaries and it can be passivated by the hydrogen. In hydrogenated samples we detect at low temperature shallow defect states with photoionization threshold energies well below 1 eV, probably related to the hydrogenated surface.     

Semiconducting to metallic-like boron doping of nanocrystalline diamond films and its effect on osteoblastic cells

The impact of boron doping level of nanocrystalline diamond (NCD) films on the character of cell growth (i.e., adhesion, proliferation and differentiation) is presented. Intrinsic and boron-doped NCD films were grown on Si/SiO₂ substrates by microwave plasma CVD process. The boron-doped samples were grown by adding trimethylboron (TMB) to the gas mixture of methane and hydrogen. Highly resistive (0 ppm), semiconducting (133 or 1000 ppm), and metallic-like (6700 ppm) NCD films were tested as the artificial substrates for the cultivation of osteoblast-like MG 63 cells. The conductivity and surface charge increased monotonically with the increasing boron content. All NCD substrates showed good biocompatibility and stimulated the adhesion and growth of MG 63 cells. Higher osteocalcin concentration (by more than 30%) for the cells growing on 1000 and 6700 ppm boron-doped NCD films was found which indicates an enhancement in the cell growth biochemistry.     

On the reduction of the non-diamond phase in nanocrystalline CVD diamond films

We present photocurrent spectra of nominally undoped nanocrystalline diamond (NCD) films grown on glass substrates by hot filament (HF) and microwave (MW) plasma enhanced chemical vapor deposition (CVD). The spectra were measured in a broad optical range (200–2000 nm) by dual-beam photocurrent spectroscopy (DBP) and Fourier-transform photocurrent spectroscopy (FTPS) in amplitude modulated step scan mode. The NCD films with carefully oxidized surface show photosensitivity and high dark resistivity. Unlike single crystal type IIa diamond with the photonization threshold at 5.5 eV, the photocurrent spectra of NCD films are dominated by the “non-diamond phase” with the photo-ionization threshold at about 0.8 eV. Some HF CVD samples have lower sub-band gap absorption (non-diamond phase contamination). The non-diamond phase content increases after annealing at elevated temperature. The non-diamond phase content can be reduced by exposing NCD to hydrogen plasma at temperature below 350 °C.     

Simplified procedure for patterned growth of nanocrystalline diamond micro-structures

Two technological strategies to generate patterned diamond growth have been tested. The diamond micro-structures (i.e. linear stripes and 5 µm narrow channels) were grown in the thickness of 450 nm on Si/SiO₂ substrates by a microwave plasma chemical vapor deposition process. Strategy 1, employing a metal mask, resulted in unsatisfying patterned diamond growth due to instability of metal mask. Strategy 2 was based on a direct lithographic patterning of the seeding layer and resulted in a strongly selective, homogenous, and compact growth of diamond on the polymer-coated seeding patterns. This is assigned to the high seeding yield. The diamond micro-structures formed in this way exhibit surface conductivity of 10^− 7 (Ω/□)^− 1 as assessed by I–V characteristics. The observed results appear promising for the development of directly grown diamond-based transistors.     

Optical properties of SnO2:F films deposited by atmospheric pressure CVD

Atmospheric pressure chemical vapor deposition (APCVD) system, designed for the deposition of F-doped SnO₂ thin films, is compatible with industrial requirements such as high process speed, scaling to wide substrate widths and low costs. Precise method for measuring the optical absorptance in the spectral range 300–1700 nm combines transmittance, reflectance and photothermal deflection (PDS) spectra measured on the same spot of the sample immersed in the transparent liquid with a relatively high index of refraction. The effects of the film thickness, doping gas addition and the susceptor temperature on the optical absorptance and electrical resistivity of the TCO films are assessed. We show that the doping gas concentration and the susceptor temperature influence both the incorporation ratio of dopants into SnO₂ film as well as the defect concentration. The SnO₂ films growth at optimum APCVD conditions have thickness 0.7 µm, average surface roughness about 40 nm, sheet electrical resistance 10 Ω/sq and the optical absorption 1% at 500 nm and about 5% at 1000 nm.