High-power 1.7–1.8 μm single-mode laser diodes

Separate confinement InGaAsP/InP laser heterostructures were grown by metalorganic-hydride vapor-phase epitaxy. High-power single-mode laser diodes of mesastripe design based on these heterostructures operate in a wavelength interval of 1.7–1.8 μm with a maximum continuous room temperature output power of 150 mW. The single-mode lasing regime is maintained up to an output power level of 100 mW.     

The order of singularity of pulse optimal controls in degenerate linear-quadratic optimization problems with time delay

In the paper, we study a problem of minimization of degenerate integral quadratic functional of special delayed structure (a subintegral function contains items concentrated at the moment and items with delay in phase coordinates) on trajectories of a linear system of differential equations with time delay in phase coordinates considered on a finite period of time. Sufficient conditions for the existence of optimal program control in space of generalized functions of the lth order of singularity are established and an optimal control is obtained. A special feature of the problem is that the optimal program contains pulse components concentrated at the ends of the control gap.     

Studying the characteristics of pulse-pumped semiconductor 1060-nm lasers based on asymmetric heterostructures with ultrathick waveguides

High-power semiconductor lasers based on asymmetric quantum-dimensional separate confinement InGaAs/GaAs heterostructures with ultrathick waveguides were fabricated by means of metalorganic hydride vapor phase epitaxy technology. The laser characteristics were studied in a pulsed pumping regime, in which the emission was excited by current pulses of 100 ns duration at a repetition frequency of 10 kHz and an amplitude of up to 200 A. The passage to a pulsed lasing regime allowed the active region heating to be reduced and the output power to be increased to 145 W for a laser diode with a 100-μm exit aperture. The results obtained for the pulsed lasing regime show that saturation of the output power-current characteristic observed in the continuous-wave regime is fully determined by overheating of the active region of a semiconductor laser.     

Diagonal stabilization of linear multivariable systems

A new procedure is presented for the synthesis of diagonal compensators for N × N linear multivariable systems that are free of fixed modes with respect to constant diagonal output feedbacks. The synthesis procedure employs simple polynomial algebra and it is in the form of an N-step algorithm. The geometric configurations 2N- and 2^N-cells in N-space are shown to be especially suitable for visualizing diagonal feedback and aiding the application of the synthesis algorithm.     

Effect of the active region thickness on characteristics of semiconductor lasers based on asymmetric AlGaAs/GaAs/InGaAs heterostructures with broadened waveguide

The effect of the active region thickness on the basic characteristics of high-power semiconductor lasers based on AlGaAs/GaAs/InGaAs asymmetric separate-confinement heterostructures grown by MOCVD epitaxy has been studied. It is shown that the threshold current, temperature sensitivity of the threshold current density, internal quantum efficiency of stimulated emission, and differential quantum efficiency are improved as the active region thickness increases. It is demonstrated that the maximum attainable optical emission power of a semiconductor laser and the internal quantum efficiency of photoluminescence are the most sensitive to defect formation in the heterostructure and become lower as the critical thickness of the strained In_xGa_1–x As layer in the active region is exceeded.