Since the report of the first diketopyrrolopyrrole (DPP)‐based polymer semiconductor, such polymers have received considerable attention as a promising candidate for high‐performance polymer semiconductors in organic thin‐film transistors (OTFTs). This Progress Report summarizes the advances in the molecular design of high‐mobility DPP‐based polymers reported in the last few years, especially focusing on the molecular design of these polymers in respect of tuning the backbone and side chains, and discussing the influences of structural modification of the backbone and side chains on the properties and device performance of corresponding DPP‐based polymers. This provides insights for the development of new and high‐mobility polymer semiconductors. 相似文献
We report a novel and very handful strategy for the functionalization of diamond nanoparticles (NDs), based on the ultrasound-assisted grafting of aryl groups from the electroless reduction of diazonium salts. For this study, 4-nitrobenzenediazonium salt was used as a model molecule and the reaction was investigated in neutral and acidic aqueous media. Spectroscopic evidence for the successful attachment of aryl groups to nanodiamonds (NDs) was given by IR and XPS which clearly detect characteristic NO2 peaks. Moreover, the absence of any peaks from the +N≡N group in the IR spectra is a clear indication of the chemical reduction of the parent diazonium salt at the surface of NDs. This spontaneous chemical modification of NDs by aryl diazonium salts was confined to the surface of the ND particles; indeed, XRD measurements have shown that the crystalline structure of the bulk of the particles was unaffected. It opens up new possibilities towards the control of the surface chemical composition of NDs using simple protocols operated in very soft conditions, i.e. in water at room temperature. It shows conclusively that the chemistry toolbox of experts interested in nanodiamonds should contain aryl diazonium salts, given their versatility in forming active platforms. 相似文献
In this study, inorganic silica nanoparticles are used to manipulate the morphology of 6,13‐bis(triisopropylsilylethynyl)‐pentacene (TIPS pentacene) thin films and the performance of solution‐processed organic thin‐film transistors (OTFTs). This approach is taken to control crystal anisotropy, which is the origin of poor consistency in TIPS pentacene based OTFT devices. Thin film active layers are produced by drop‐casting mixtures of SiO2 nanoparticles and TIPS pentacene. The resultant drop‐cast films yield improved morphological uniformity at ~10% SiO2 loading, which also leads to a 3‐fold increase in average mobility and nearly 4 times reduction in the ratio of measured mobility standard deviation (μStdev) to average mobility (μAvg). Grazing‐incidence X‐ray diffraction, scanning and transmission electron microscopy as well as polarized optical microscopy are used to investigate the nanoparticle‐mediated TIPS pentacene crystallization. The experimental results suggest that the SiO2 nanoparticles mostly aggregate at TIPS pentacene grain boundaries, and 10% nanoparticle concentration effectively reduces the undesirable crystal misorientation without considerably compromising TIPS pentacene crystallinity. 相似文献
While great progress has been achieved in the research of various solution-processed organic semiconductors, the randomized crystal orientations and charge carrier mobility variations have posed tremendous challenges to implement the organic semiconductors for organic electronic device applications. Among the miscellaneous polymer additives reported to tune the crystal growth and modulate charge transport, poly(α-methyl styrene) (PαMS) has been extensively studied for its capability to improve semiconductor crystallization, reduce bulk crystal misorientation, induce phase segregation, enhance morphological uniformity and boost electrical performance of organic thin film transistors and organic electronic devices. In the first section of this article, we review the recent progress of organic electronics and highlight the crystal misorientation and mobility variation as the challenges that need to be overcome. Then, the various merits from mixing polymeric additives with organic semiconductors are discussed. In the second section, we provide an overview of the previous works that employ PαMS for regulating the crystal orientation alignment and modulating charge transport of miscellaneous solution-processed small-molecular organic semiconductors including 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS pentacene) and 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene (diF-TESADT). By discussing these important examples, we intend to demonstrate that PαMS can be versatilely implemented to improve other new organic semiconductor crystallization and mobility for high-performance organic electronic applications.
The isothermal repetitive upsetting extrusion (RUE) was implemented to process ZK60 magnesium alloy at 380 °C. Then, the relationship between the microstructural characters, including grain refinement and texture evolution, and the mechanical performance of the alloy was investigated. Results showed that after 3 passes of RUE, the average grain size was refined from 115.0 to 26.5 μm, which was mainly caused by the continuous dynamic recrystallization and discontinuous dynamic recrystallization. Meanwhile, the elongation of the alloy increased from 13.8 to 21.6%, and the superplasticity (142%) of the alloy has been achieved in the following high temperature tensile test, which is very beneficial for the further processing of the alloy into components. In particular, the alloy formed a distinctive texture distributed between < 2-1-11 > and < 2-1-14 > , which was greatly related to the Schmid factor of extrusion direction (ED) and transverse direction (TD). This texture changed the initiation ability of basal and prismatic slip in both directions and inhibited the initiation of partial tensile twinning in TD; thus, the anisotropy in both directions was weakened. As expected, the tensile yield strength difference decreased from 25.9 to 3.4 MPa, but it was used as the cost of tensile yield strength in ED. 相似文献