POSITRON LIFETIME DETERMINATION OF InP BY A HIGH RESOLUTION TIME SPECTROMETER

Positron lifetime was .measured on crystalline indium phosphide by a high resolution time spectrometer. By trapping model positron lifetime in bulk InP was estimated at 231.5±1.5 ps which was carefully compared with the experimental and the theoretical values known from the literature.     

Bi_2Sr_2CaCu_2O_（y－x）F_x超导体的正电子寿命研究

室温下测量了Ｂｉ２Ｓｒ２ＣａＣｕ２Ｏｙ－ｘＦｘ超导体的正电子寿命和掺Ｆ量的关系．结合临界温度Ｔｃ的测量．研究了Ｆ在样品中替换Ｏ的位置．以及由此引起的样品电子结构的变化．研究表明．当ｘ＝０．４时．Ｆ主要替换Ｓｒ－Ｏ面的Ｏ．并使Ｓｒ－Ｏ面的电子向Ｃｕ－Ｏ面和Ｂｉ－Ｏ层迁移。