Simulation study on electron heating characteristics in magnetic enhancement capacitively coupled plasmas with a longitudinal magnetic field

The electron heating characteristics of magnetic enhancement capacitively coupled argon plasmas in presence of both longitudinal and transverse uniform magnetic field have been explored through both theoretical and numerical calculations. It is found that the longitudinal magnetic field can affect the heating by changing the level of the pressure heating along the longitudinal direction and that of the Ohmic heating along the direction which is perpendicular to both driving electric field and the applied transverse magnetic field, and a continuously increased longitudinal magnetic field can induce pressure heating to become dominant. Moreover, the electron temperature as well as proportion of some low energy electrons will increase if a small longitudinal magnetic field is introduced, which is attributed to the increased average electron energy. We believe that the research will provide guidance for optimizing the magnetic field configuration of some discharge systems having both transverse and longitudinal magnetic field.     

The properties of N-doped diamond-like carbon films prepared by helicon wave plasma chemical vapor deposition

In this paper, N-doped diamond-like carbon(DLC) films were deposited on silicon substrates by using helicon wave plasma chemical vapor deposition(HWP-CVD) with the Ar/CH_4/N_2 mixed gas. The surface morphology, structural and mechanical properties of the N-doped DLC films were investigated in detail by scanning electron microscopy(SEM), x-ray photoelectron spectroscopy(XPS), Raman spectra, and atomic force microscopy(AFM). It can be observed from SEM images that surface morphology of the films become compact and uniform due to the incorporation of N. The maximum of the deposition rate of the films is 143 nm min~(-1), which is related to the high plasma density. The results of XPS show that the N incorporates in the films and the C-C sp~3 bond content increases firstly up to the maximum(20%) at 10 sccm of N_2 flow rate, and then decreases with further increase in the N_2 flow rate. The maximum Young's modulus of the films is obtained by the doping of N and reaches 80 GPa at 10 sccm of N_2 flow rate, which is measured by AFM in the scanning probe microscope mode. Meanwhile, friction characteristic of the N-doped DLC films reaches a minimum value of 0.010.     

The application of a helicon plasma source in reactive sputter deposition of tungsten nitride thin films

A reactive helicon wave plasma (HWP) sputtering method is used for the deposition of tungsten nitride (WNx) thin films. N2 is introduced downstream in the diffusion chamber. The impacts of N2 on the Ar-HWP parameters, such as ion energy distribution functions (IEDFs), electron energy probability functions (EEPFs), electron temperature (Te) and density (ne), are investigated. With the addition of N2, a decrease in electron density is observed due to the dissociative recombination of electrons with ${{\rm{N}}}_{2}^{+}.$ The similar IEDF curves of Ar+ and N2+ indicate that the majority of ${{\rm{N}}}_{2}^{+}$ stems from the charge transfer in the collision between Ar+ and N2. Moreover, due to the collisions between electrons and N2 ions, EEPFs show a relatively lower Te with a depletion in the high-energy tail. With increasing negative bias from 50 to 200 V, a phase transition from hexagonal WN to fcc-WN0.5 is observed, together with an increase in the deposition rate and roughness     

Mechanism of high growth rate for diamond-like carbon films synthesized by helicon wave plasma chemical vapor deposition

A high growth rate fabrication of diamond-like carbon(DLC)films at room temperature was achieved by helicon wave plasma chemical vapor deposition(HWP-CVD)using Ar/CH_4gas mixtures.The microstructure and morphology of the films were characterized by Raman spectroscopy and scanning electron microscopy.The diagnosis of plasma excited by a helicon wave was measured by optical emission spectroscopy and a Langmuir probe.The mechanism of high growth rate fabrication for DLC films by HWP-CVD has been discussed.The growth rate of the DLC films reaches a maximum value of 54μm h~(-1)at the CH_4flow rate of 85 sccm,which is attributed to the higher plasma density during the helicon wave plasma discharge.The CH and H_αradicals play an important role in the growth of DLC films.The results show that the H_αradicals are beneficial to the formation and stabilization of C=C bond from sp~2to sp~3.     

Synthesis of Ag-decorated vertical graphene nanosheets and their electrocatalytic efficiencies

Herein we report the successful preparation of silver (Ag)-decorated vertically oriented graphene sheets (Ag/VGs) via helicon wave plasma chemical vapor deposition (HWP-CVD) and radiofrequency plasma magnetron sputtering (RF-PMS). VGs were synthesized in a mixture of argon and methane (Ar/CH4) by HWP-CVD and then the Ag nanoparticles on the prepared VGs were modified using the RF-PMS system for different sputtering times and RF power levels. The morphology and structure of the Ag nanoparticles were characterized by scanning electron microscopy and the results revealed that Ag nanoparticles were evenly dispersed on the mesoporous wall of the VGs. X-ray diffraction results showed that the diameter of the Ag particles increased with the increase in Ag loading, and the average size was between 10.49 nm and 25.9 nm, consistent with the transmission electron microscopy results. Ag/VGs were investigated as effective electrocatalysts for use in an alkaline aqueous system. Due to the uniquely ordered and interconnected wall structure of VGs, the area of active sites increased with the Ag loading, giving the Ag/VGs a good performance in the oxygen evolution reaction. The double-layer capacitance (Cdl) of the Ag/VGs under different Ag loadings were studied, and the results showed that the highest Ag content gave the best Cdl (1.04 mF cm−2). Our results show that Ag/VGs are likely to be credible electrocatalytic materials.