Modification of Optical Band-Gap of Si Films After Ion Irradiation

Amorphous silicon (a-Si),nanocrystalline silicon (nc-Si) and hydrogenated nanocrys-talline silicon (nc-Si:H) films were fabricated by using chemical vapor deposition (CVD) system.The a-Si and nc-Si thin films were irradiated with 94 MeV Xe-ions at fluences of 1.0×10 11 ions/cm-2,1.0×10 12 ions/cm-2 and 1.0×10 13 ions/cm-2 at room temperature (RT).The nc-Si:H films were irradiated with 9 MeV Xe-ions at 1.0×10 12 Xe/cm-2,1.0×10 13 Xe/cm-2 and 1.0×10 14 Xe/cm-2 at RT.For comparison,mono-crystalline silicon (c-Si) samples were also irradiated at RT with 94 MeV Xe-ions.All samples were analyzed by using an UV/VIS/NIR spectrometer and an X-ray powder diffractometer.Variations of the optical band-gap (E g) and grain size (D) versus the irradiation fluence were investigated systematically.The obtained results showed that the optical band-gaps and grain size of the thin films changed dramatically whereas no observable change was found in c-Si samples after Xe-ion irradiation.Possible mechanism underlying the modification of silicon thin films was briefly discussed.     

MgAl2O4掺杂对ZTA-MgAl2O4复相陶瓷力学及热学性能的影响

以Al_2O_3、Zr O_2、MgO为初始粉末,采用放电等离子体烧结(SPS)制备ZTA-MgAl_2O_4复相陶瓷,研究MgAl_2O_4掺杂对ZTA-MgAl_2O_4复相陶瓷微观结构,力学及热学性能的影响。结果表明:ZTA-MgAl_2O_4复相陶瓷物相包括α-Al_2O_3、t-Zr O_2和MgAl_2O_4,烧结过程中MgO与Al_2O_3完全反应生成MgAl_2O_4;随MgAl_2O_4添加量增加,复相陶瓷Vickers硬度由21 GPa逐渐降低至17.5 GPa;而断裂韧性及抗弯强度呈现先增大后减小的趋势,当MgAl_2O_4添加量为15%(体积分数)时,断裂韧性和弯曲强度达到最大值,分别为8.55 MPa·m~(1/2)和1 056 MPa;此外,相同测试温度下复相陶瓷热导率随MgAl_2O_4添加量的增加逐渐减小,如温度为50℃时复相陶瓷热导率由18.5 W/(m·K)逐渐降低到14.3 W/(m·K)。     

ZrC掺杂对ZTA复相陶瓷微观结构和力学性能的影响

以ZTA20%(zirconia-20%toughened alumina)为基体,通过掺杂不同体积分数的ZrC(10%、15%、20%、25%)研究其对复相陶瓷微观结构和力学性能的影响。采用放电等离子体烧结法在1 400℃、40 MPa保温15 min制备样品。用Archimedes法测得样品相对密度最高可达99.08%。不同ZrC含量的烧结样品的物相成分均为ZrC、α-Al_2O_3和ZrO_2,烧结后无杂质相产生,表明复相陶瓷在烧结过程中具有优良的化学相容性,该复相陶瓷内部各晶粒尺寸均匀,无异常长大现象,断裂机制为穿晶断裂和沿晶断裂相结合。随着ZrC含量的增加,复相陶瓷的弯曲强度先增大后减小,ZrC含量为20%时达到最大值722 MPa;断裂韧性则由5.47 MPa·m~(1/2)增加到6.51 MPa·m~(1/2);显微硬度由17.30 GPa逐渐降低至16.19 GPa。