Urban growth trend analysis using GIS techniques—a case study of the Bombay metropolitan region

Abstract

Towns and cities in India are facing complex problems regarding the provision and maintenance of services and infrastructure in the face of the rapid growth of pupulation, caused both by natural increase and migration. In order to meet such challenges a planner needs to have fairly accurate and up-to-date information, especially about physical structures and related land parameters. A study of their trends generally helps in the understanding of the emerging growth pattern and in formulating policies to guide or redirect it. Recent advances in the field of remote sensing technology and computer based Geographical Information Systems (GIS) provide very useful tools in undertaking such analysis. The results from a study about growth trends of the urban areas in the Bombay Metropolitan Region using multi-date remote sensing data and ARC/INFO GIS package are described here. The period under consideration is from 1968 to 1989. It should be noted that the major growth in the region is confined to Greater Bombay between 1968 to 1975. After the year 1975, a distinct outward growth along the rail corridors is visible. Growth after 1975 is mainly in the Kalyan, Bhiwandi, New Bombay and Panvel areas and in the area around Manori creek (Charkop area). The growth rate is found to be higher after the year 1975 compared to the prior growth rate. The spatial growth trends are examined in relation to the population and the population density has been computed for different periods. Based upon these densities, the extent of land required for urban development for the year 2001 has been calculated. Suitability of land for urbanisation has been carried out based upon physical characteristics of the land and environmental parameters. The priority areas of urban development to meet the additional requirement in 2001 have been identified on the basis of this suitability analysis. A map on a 1:250000 scale has been prepared to show the areas for urbanisation which will meet the demands for the year 2001. This study demonstrates the potential offered by the integration of the tools of remote sensing and GIS for urban and regional planning.     

Vacuum system of SST-1 Tokamak

Vacuum chambers of Steady State Superconducting (SST-1) Tokamak comprises of the vacuum vessel and the cryostat. The plasma will be confined inside the vacuum vessel while the cryostat houses the superconducting magnet systems (TF and PF coils), LN₂ cooled thermal shields and hydraulics for these circuits. The vacuum vessel is an ultra-high (UHV) vacuum chamber while the cryostat is a high-vacuum (HV) chamber. In order to achieve UHV inside the vacuum vessel, it would be baked at 150 °C for longer duration. For this purpose, U-shaped baking channels are welded inside the vacuum vessel. The baking will be carried out by flowing hot nitrogen gas through these channels at 250 °C at 4.5 bar gauge pressure. During plasma operation, the pressure inside the vacuum vessel will be raised between 1.0 × 10^?4 mbar and 1.0 × 10^?5 mbar using piezoelectric valves and control system. An ultimate pressure of 4.78 × 10^?6 mbar is achieved inside the vacuum vessel after 100 h of pumping. The limitation is due to the development of few leaks of the order of 10^?5 mbar l/s at the critical locations of the vacuum vessel during baking which was confirmed with the presence of nitrogen gas and oxygen gas with the ratio of ～3.81:1 indicating air leak. Similarly an ultimate vacuum of 2.24 × 10^?5 mbar is achieved inside the cryostat. Baking of the vacuum vessel up to 110 °C with ±10 °C deviation was achieved with a net mass flow rate of 0.8 kg/s at 1.5 bar gauge inlet pressure and supply temperature of 230 °C at the heater end. Also during gas feed system installation, the pressure inside the VV was raised from 3.01 × 10^?5 mbar to 1.72 × 10^?4 mbar by triggering a pulse of lower amplitude of 25 voltage direct current (VDC) for 100 s to piezoelectric valve. This paper describes in detail the design and implementation of the various vacuum subsystems including relevant experimental results.     

Nitrogen Gas Heating and Supply System for SST-1 Tokamak

Steady State Tokamak (SST-1) vacuum vessel baking as well as baking of the first wall components of SST-1 are essential to plasma physics experiments. Under a refurbishment spectrum of SST-1, the nitrogen gas heating and supply system has been fully refurbished. The SST-1 vacuum vessel consists of ultra-high vacuum (UHV) compatible eight modules and eight sectors. Rectangular baking channels are embedded on each of them. Similarly, the SST-1 plasma facing components (PFC) are comprised of modular graphite diverters and movable graphite based limiters. The nitrogen gas heating and supply system would bake the plasma facing components at 350 o C and the SST-1 vacuum vessel at 150 o C over an extended duration so as to remove water vapour and other absorbed gases. An efficient PLC based baking facility has been developed and implemented for monitoring and control purposes. This paper presents functional and operational aspects of a SST-1 nitrogen gas heating and supply system. Some of the experimental results obtained during the baking of SST-1 vacuum modules and sectors are also presented here.     

Effect of variation of precursor concentration on structural,microstructural, optical and gas sensing properties of nanocrystalline TiO2 thin films prepared by spray pyrolysis techniques

The objective of the present paper is to investigate the effect of variation of precursor concentration (0·01, 0·02 and 0·03 M) on the structural, microstructural, optical and gas sensing properties of TiO $_{2}$ thin films. Titanium dioxide (TiO $_{2}$ ) films were prepared from aqueous solution of titanium chloride (TiCl $_{3}\cdot $ 6H $_{2}$ O, 99·9% pure, Merck made, Germany) onto the glass substrates heated at a temperature of 350 °C by the spray pyrolysis technique. Bandgap energy of the films vary from 3.28 to 3.29 eV. X-ray diffraction shows that films to be nanocrystalline with anatase phase having tetragonal crystal structure. The d values calculated from electron diffraction patterns (TEM) were observed to be matching with d values calculated from XRD. Transmission electron microscopy (TEM) reveled that grain sizes were observed to increase (10–29 nm) with an increase in the concentration of precursor solution. The gas sensing performance of the films was tested.     

High growth rate of a-SiC:H films using ethane carbon source by HW-CVD method

Hydrogenated amorphous silicon carbide (a-SiC:H) thin films were prepared using pure silane (SiH₄) and ethane (C₂H₆), a novel carbon source, without hydrogen dilution using hot wire chemical vapour deposition (HW-CVD) method at low substrate temperature (200 °C) and at reasonably higher deposition rate (19·5 Å/s < r _d < 3·2 Å/s). Formation of a-SiC:H films has been confirmed from FTIR, Raman and XPS analysis. Influence of deposition pressure on compositional, structural, optical and electrical properties has been investigated. FTIR spectroscopy analysis revealed that there is decrease in C–H and Si–H bond densities while, Si–C bond density increases with increase in deposition pressure. Total hydrogen content drops from 22·6 to 14·4 at.% when deposition pressure is increased. Raman spectra show increase in structural disorder with increase in deposition pressure. It also confirms the formation of nearly stoichiometric a-SiC:H films. Bandgap calculated using both Tauc’s formulation and absorption at 10⁴ cm^?1 shows decreasing trend with increase in deposition pressure. Decrease in refractive index and increase in Urbach energy suggests increase in structural disorder and microvoid density in the films. Finally, it has been concluded that C₂H₆ can be used as an effective carbon source in HW-CVD method to prepare stoichiometric a-SiC:H films.